Reduction of secondary defects in MeV ion‐implanted silicon by means of ion beam defect engineering

1992 ◽  
Vol 71 (8) ◽  
pp. 3780-3784 ◽  
Author(s):  
Zhong‐lie Wang ◽  
Bo‐xu Zhang ◽  
Qing‐tai Zhao ◽  
Qi Li ◽  
J. R. Liefting ◽  
...  
Keyword(s):  
Ion Beam ◽  
Defect Engineering ◽  
Ion Implanted

Tunable Infrared Optics Enabled by Defect-Engineering of Vanadium Dioxide Using Focused Ion Beam

2021 ◽  
Author(s):  
Chenghao Wan ◽  
Jura Rensberg ◽  
Zhen Zhang ◽  
Martin Hafermann ◽  
Hongyan Mei ◽  
...  
Keyword(s):  
Vanadium Dioxide ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Defect Engineering ◽  
Infrared Optics

Defect Engineering in Ion Beam Synthesis of SiC and SiO2 in Si

2005 ◽  
pp. 321-326
Author(s):  
R. Kögler ◽  
A. Mücklich ◽  
J.R. Kaschny ◽  
H. Reuther ◽  
F. Eichhorn ◽  
...  
Keyword(s):  
Ion Beam ◽  
Defect Engineering ◽  
Ion Beam Synthesis

scholarly journals Friction and Structural Responses of Ion Implanted Polyoxymethylene Copolymer (POM-C)

2016 ◽  
Vol 44 ◽  
pp. 37-44
Author(s):  
Md. Shahinur Rahman ◽  
Konstantin Lyakhov ◽  
Jong-Keun Yang ◽  
Muhammad Athar Uddin ◽  
Muhammad Sifatul Alam Chowdhury
Keyword(s):  
Surface Roughness ◽  
Friction Coefficient ◽  
Surface Deformation ◽  
Ion Beam ◽  
Polymer Surface ◽  
Surface Texturing ◽  
Structural Response ◽  
Lower Surface ◽  
Chain Scission ◽  
Ion Implanted

Polyoxymethylene copolymer (POM-C) round block was implanted with 120 KeV ions of He to doses of 5 x 1016 and 1 x 1016 ions cm-2. It was also implanted with 120 KeV ions of Ar + He and He + Ne to dose of 1 x 1016 ions cm-2, respectively. The friction coefficient behavior of both implanted and unimplanted POM-C blocks was investigated using a ball on disk tribometer mechanism. The friction coefficient of He ion implanted POM-C block at a dose of 5 x 1016 ions cm-2 is lowest compared to all unimplanted and others ions doses implanted POM-C blocks. It also shows the moderate surface texturing (atomic rearrangement), lower surface micro-hardness and average surface roughness compared to both unimplanted and other ions doses implanted POM-C blocks due to well adjusted carbonization, cross-linking and ions-target atoms collisions, which is ascertained from SEM-EDS, Raman spectroscopic and surface profiling observations. The other ions doses implanted POM-C blocks demonstrate the higher friction coefficient and surface roughness with polymer surface deformation (crazing, cracking, pitting and gas evolution, bond breaking) due to severe chain scission, surface dose delivered atomic displacements and chemical structural degradation. It is concluded that the variation in friction coefficient behavior of POM-C block resulted from its structural response for ion beam implantation on the top surface.

Gettering effects in BF2‐implanted Si(100) by ion‐beam defect engineering

1995 ◽  
Vol 77 (10) ◽  
pp. 5014-5019 ◽  
Author(s):  
Qing‐Tai Zhao ◽  
Zhong‐Lie Wang ◽  
Yongming Cao ◽  
Tian‐Bing Xu ◽  
Pei‐Ran Zhu
Keyword(s):  
Ion Beam ◽  
Defect Engineering

Application of High Energy Ion Beam on the Control of Boron Diffusion

2003 ◽  
Vol 792 ◽  
Author(s):  
Wei-Kan Chu ◽  
Lin Shao ◽  
Jiarui Liu
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Anomalous Diffusion ◽  
Ion Beam ◽  
Surface Region ◽  
High Energy ◽  
Boron Diffusion ◽  
Defect Engineering ◽  
Projected Range ◽  
Ultrashallow Junction

ABSTRACTAnomalous diffusion of boron during annealing is a detriment on the fabrication of ultrashallow junction required by the next generation Si devices. This has driven the need to develop new doping methods. In the point defect engineering approach, high-energy ion bombardments inject vacancies near the surface region and create excessive interstitials near the end of projected range of incident ions. Such manipulation of point defects can retard boron diffusion and enhance activation of boron. We will review the current understanding of boron diffusion and our recent activities in point defect engineering.

Ultra-Pure Processing: a Key Challenge for Ion Implantation Processing for Fabrication of ULSI Devices

1989 ◽  
Vol 147 ◽  
Author(s):  
M. I. Current ◽  
L. A. Larson
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Wafer Surface ◽  
Physical Mechanisms ◽  
Foreign Materials ◽  
Ion Implanted

AbstractA key issue in modern ion implantation processing is the requirement for dramatic improvements in the purity of the incident ion beam and reductions in the deposition of foreign materials onto the wafer surface. These deposited materials include particles as well as sputtered and vapor deposited metals and dopants. Physical mechanisms which effect the elemental purity of atoms arriving at the surface of ion implanted wafers and progress towards achieving implantation purity levels of below 100 ppm of the implanted dose for sputtered metal and dopant films are discussed.

Effects of ion beam defect engineering on carrier concentration profiles in 50 keV P+‐implanted Si(100)

1993 ◽  
Vol 62 (24) ◽  
pp. 3183-3185 ◽  
Author(s):  
Qing‐tai Zhao ◽  
Zhong‐lie Wang ◽  
Tian‐bing Xu ◽  
Pei‐ran Zhu ◽  
Jun‐si Zhou
Keyword(s):  
Carrier Concentration ◽  
Ion Beam ◽  
Concentration Profiles ◽  
Defect Engineering
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