Pulsed-Laser Printing Process for Organic Thin Film Transistors Fabrication

2010 ◽  
Author(s):  
Ludovic Rapp ◽  
Anne Patricia Alloncle ◽  
Abdou Karim Diallo ◽  
Sébastien Nénon ◽  
Christine Videlot-Ackermann ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Pulsed Laser ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Printing Process ◽  
Laser Printing

Pulsed-laser printing of organic thin-film transistors

2009 ◽  
Vol 95 (17) ◽  
pp. 171109 ◽  
Author(s):  
Ludovic Rapp ◽  
Abdou Karim Diallo ◽  
Anne Patricia Alloncle ◽  
Christine Videlot-Ackermann ◽  
Frédéric Fages ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Pulsed Laser ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Laser Printing

Multilayer laser printing for Organic Thin Film Transistors

2011 ◽  
Vol 257 (12) ◽  
pp. 5152-5155 ◽  
Author(s):  
Ludovic Rapp ◽  
Sébastien Nénon ◽  
Anne Patricia Alloncle ◽  
Christine Videlot-Ackermann ◽  
Frédéric Fages ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Laser Printing

Laser printing of air-stable high performing organic thin film transistors

2012 ◽  
Vol 13 (10) ◽  
pp. 2035-2041 ◽  
Author(s):  
L. Rapp ◽  
F. Serein-Spirau ◽  
J.-P. Lère-Porte ◽  
A.P. Alloncle ◽  
P. Delaporte ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
High Performing ◽  
Laser Printing

Laser printing of a semiconducting oligomer as active layer in organic thin film transistors: Impact of a protecting triazene layer

2012 ◽  
Vol 520 (7) ◽  
pp. 3043-3047 ◽  
Author(s):  
Ludovic Rapp ◽  
Abdou Karim Diallo ◽  
Sébastien Nénon ◽  
Anne Patricia Alloncle ◽  
Christine Videlot-Ackermann ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Laser Printing

Enhanced performance and reliability of organic thin film transistors through structural scaling in gravure printing process

2018 ◽  
Vol 59 ◽  
pp. 84-91 ◽  
Author(s):  
Jaemin Kim ◽  
Daehwan Chae ◽  
Wi Hyoung Lee ◽  
Janghoon Park ◽  
Jaehak Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Gravure Printing ◽  
Printing Process

Improvement in semiconductor laser printing using a sacrificial protecting layer for organic thin-film transistors fabrication

2011 ◽  
Vol 257 (12) ◽  
pp. 5245-5249 ◽  
Author(s):  
Ludovic Rapp ◽  
Christophe Cibert ◽  
Sébastien Nénon ◽  
Anne Patricia Alloncle ◽  
Matthias Nagel ◽  
...  
Keyword(s):  
Thin Film ◽  
Semiconductor Laser ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Laser Printing

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

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