Laser printing of air-stable high performing organic thin film transistors

2012 ◽  
Vol 13 (10) ◽  
pp. 2035-2041 ◽  
Author(s):  
L. Rapp ◽  
F. Serein-Spirau ◽  
J.-P. Lère-Porte ◽  
A.P. Alloncle ◽  
P. Delaporte ◽  
...  
Author(s):  
Sophie Griggs ◽  
Adam Marks ◽  
Helen Bristow ◽  
Iain McCulloch

This review summarises high performing n-type polymers for use in organic thin film transistors, organic electrochemical transistors and organic thermoelectric devices with a focus on stability issues arising in these electron transporting materials.


2010 ◽  
Vol 11 (4) ◽  
pp. 552-557 ◽  
Author(s):  
Christoph Auner ◽  
Ursula Palfinger ◽  
Herbert Gold ◽  
Johanna Kraxner ◽  
Anja Haase ◽  
...  

2011 ◽  
Vol 257 (12) ◽  
pp. 5152-5155 ◽  
Author(s):  
Ludovic Rapp ◽  
Sébastien Nénon ◽  
Anne Patricia Alloncle ◽  
Christine Videlot-Ackermann ◽  
Frédéric Fages ◽  
...  

2010 ◽  
Author(s):  
Ludovic Rapp ◽  
Anne Patricia Alloncle ◽  
Abdou Karim Diallo ◽  
Sébastien Nénon ◽  
Christine Videlot-Ackermann ◽  
...  

2012 ◽  
Vol 520 (7) ◽  
pp. 3043-3047 ◽  
Author(s):  
Ludovic Rapp ◽  
Abdou Karim Diallo ◽  
Sébastien Nénon ◽  
Anne Patricia Alloncle ◽  
Christine Videlot-Ackermann ◽  
...  

2009 ◽  
Vol 95 (17) ◽  
pp. 171109 ◽  
Author(s):  
Ludovic Rapp ◽  
Abdou Karim Diallo ◽  
Anne Patricia Alloncle ◽  
Christine Videlot-Ackermann ◽  
Frédéric Fages ◽  
...  

2011 ◽  
Vol 257 (12) ◽  
pp. 5245-5249 ◽  
Author(s):  
Ludovic Rapp ◽  
Christophe Cibert ◽  
Sébastien Nénon ◽  
Anne Patricia Alloncle ◽  
Matthias Nagel ◽  
...  

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui

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