Low power flexible organic thin film transistors with amorphous Ba0.7Sr0.3TiO3 gate dielectric grown by pulsed laser deposition at low temperature

2012 ◽  
Vol 13 (7) ◽  
pp. 1223-1228 ◽  
Author(s):  
Z.R. Wang ◽  
J.Z. Xin ◽  
X.C. Ren ◽  
X.L. Wang ◽  
C.W. Leung ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Low Power ◽  
Pulsed Laser Deposition ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Pulsed Laser ◽  
Organic Thin Film Transistors ◽  
Laser Deposition ◽  
Organic Thin Film

scholarly journals A low-temperature-cross-linked poly(4-vinylphenol) gate-dielectric for organic thin film transistors

2010 ◽  
Vol 519 (1) ◽  
pp. 391-393 ◽  
Author(s):  
Peter Vicca ◽  
Soeren Steudel ◽  
Steve Smout ◽  
Arne Raats ◽  
Jan Genoe ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Low-temperature processable inherently photosensitive polyimide gate dielectric for organic thin-film transistors: Synthesis, characterization, and application to transistors

2005 ◽  
Vol 20 (4) ◽  
pp. 931-939 ◽  
Author(s):  
Seungmoon Pyo ◽  
Hyunsam Son ◽  
Mi Hye Yi
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Cost ◽  
Polyimide Film ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Aromatic Diamines ◽  
Plastic Substrates

Low-temperature processable inherently photosensitive polyimide was prepared from a dianhydride, 3,3′,4,4′-benzophenone tetracarboxylic dianhydride, and aromatic diamines, 4,4′-diamino-3,3′dimethyl-diphenylmethane, through a polycondensation reaction, followed by a chemical imidization method. The photosensitive polyimide cured at 180 °C is used as a gate dielectric to fabricate flexible organic thin-film transistors with pentacene as an active semiconductor on polyethersulfone substrate. With the inherently photosensitive polyimide, the access to the gate electrode could be created easily without complicated and expensive lithographic techniques. A field effect carrier mobility of 0.007 cm2/V s was obtained for the pentacene organic thin-film transistors (OTFTs) with the photo-patterned polyimide as a gate dielectric. More detailed analysis for the pentacene OTFTs will be given with electrical properties of the thin polyimide film. Low-temperature processability and patternability of the polyimide give us more freedom to choose plastic substrates in OTFTs and facilitate the realization of low-cost organic electronics.

Cross-linked poly(hydroxy imide) gate-insulating materials for low-temperature processing of organic thin-film transistors

2018 ◽  
Vol 6 (48) ◽  
pp. 13359-13366 ◽  
Author(s):  
Joo-Young Kim ◽  
Ji Whan Kim ◽  
Eun Kyung Lee ◽  
Jeong-Il Park ◽  
Bang-Lin Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Breakdown Voltage ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Insulating Materials ◽  
Plastic Substrates ◽  
Insulating Material ◽  
Low Temperature Processing

This paper reports a polymeric gate insulating material of poly(hydroxy imide) cured at the low temperature of 130 °C for the application to organic thin-film transistors on plastic substrates exhibiting high breakdown voltage and no hysteresis.

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