Room‐temperature photoluminescence in strained quantum wells of InGaAs/GaAs grown by molecular‐beam epitaxy

1992 ◽  
Vol 71 (1) ◽  
pp. 539-541 ◽  
Author(s):  
Faustino Martelli ◽  
Maria Grazia Proietti ◽  
Maria Gabriella Simeone ◽  
Maria Rita Bruni ◽  
Marco Zugarini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Photoluminescence ◽  
Strained Quantum Wells

Molecular Beam Epitaxy of Znl-x Cdx Se/ZnSe Heterostructures And Their Optical Properties

1991 ◽  
Vol 228 ◽  
Author(s):  
H. Luo ◽  
N. Samarth ◽  
J. K. Furdyna ◽  
H. Jeon ◽  
J. Ding ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stimulated Emission ◽  
Optically Pumped ◽  
Absorption Coefficients ◽  
Excitonic Absorption ◽  
Lasing Mechanism

ABSTRACTSuperlattices and quantum wells of Znl-xCdxSe/ZnSe, and heterostructures based on ZnSe/CdSe digital alloys have been grown by molecular beam epitaxy (MBE). Their optical properties were studied with particular emphasis on excitonic absorption and photopumped stimulated emission. Excitonic absorption is easily observable up to 400 K, and is characterized by extremely large absorption coefficients (α = 2×105cm−1). Optically pumped lasing action is obtained at room temperature with a typical threshold intensity of 100 kW/cm2. The lasing mechanism in these II-VI quantum wells appears to be quite different from that in the better studied III-V materials: in our case, the onset of stimulated emission occurs before the saturation of the excitonic absorption, and the stimulated emission occurs at an energy lower than that of the excitonic absorption.

scholarly journals Room temperature photoluminescence from InxAl(1−x)N films deposited by plasma-assisted molecular beam epitaxy

2014 ◽  
Vol 105 (13) ◽  
pp. 132101 ◽  
Author(s):  
W. Kong ◽  
A. Mohanta ◽  
A. T. Roberts ◽  
W. Y. Jiao ◽  
J. Fournelle ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Photoluminescence

Strong room temperature 510 nm emission from cubic InGaN/GaN multiple quantum wells

2004 ◽  
Vol 831 ◽  
Author(s):  
S.F. Li ◽  
D.J. As ◽  
K. Lischka ◽  
D.G. Pacheco-Salazar ◽  
L.M.R. Scolfaro ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Bandgap Energy ◽  
Multiple Quantum ◽  
Photoluminescence Intensity ◽  
Excitation Spectra ◽  
Room Temperature Photoluminescence ◽  
Double Heterostructures ◽  
Peak Energy

ABSTRACTCubic InGaN/GaN double heterostructures and multi-quantum-wells have been grown by Molecular Beam Epitaxy on cubic 3C-SiC. We find that the room temperature photoluminescence spectra of our samples has two emission peaks at 2.4 eV and 2.6 e V, respectively. The intensity of the 2.6 eV decreases and that of the 2.4 eV peak increases when the In mol ratio is varied between X = 0.04 and 0.16. However, for all samples the peak energy is far below the bandgap energy measured by photoluminescence excitation spectra, revealing a large Stokes-like shift of the InGaN emission. The temperature variation of the photoluminescence intensity yields an activation energy of 21 meV of the 2.6 eV emission and 67 meV of the 2.4 eV emission, respectively. The room temperature photoluminescence of fully strained multi quantum wells (x = 0.16) is a single line with a peak wavelength at about 510 nm.

Photocurrent spectroscopy of GaInNAs and GaInNAs(Sb) strained quantum wells grown by molecular beam epitaxy

2004 ◽  
Vol 113 (3) ◽  
pp. 365-369 ◽  
Author(s):  
S. Ben Bouzid ◽  
F. Bousbih ◽  
R. Chtourou ◽  
J.C. Harmand ◽  
P. Voisin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Strained Quantum Wells ◽  
Photocurrent Spectroscopy
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