scholarly journals Room temperature photoluminescence from InxAl(1−x)N films deposited by plasma-assisted molecular beam epitaxy

2014 ◽  
Vol 105 (13) ◽  
pp. 132101 ◽  
Author(s):  
W. Kong ◽  
A. Mohanta ◽  
A. T. Roberts ◽  
W. Y. Jiao ◽  
J. Fournelle ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Photoluminescence

Room‐temperature photoluminescence in strained quantum wells of InGaAs/GaAs grown by molecular‐beam epitaxy

1992 ◽  
Vol 71 (1) ◽  
pp. 539-541 ◽  
Author(s):  
Faustino Martelli ◽  
Maria Grazia Proietti ◽  
Maria Gabriella Simeone ◽  
Maria Rita Bruni ◽  
Marco Zugarini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Photoluminescence ◽  
Strained Quantum Wells

Cyan electroluminescence from n-ZnO/i-CdZnO/p-Si heterojunction diodes

2009 ◽  
Vol 1201 ◽  
Author(s):  
Lin Li ◽  
Zheng Yang ◽  
Jianlin Liu
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Emission Intensity ◽  
Room Temperature ◽  
Molecular Beam ◽  
Injection Current ◽  
Si Substrate ◽  
Room Temperature Photoluminescence ◽  
Heterojunction Diodes

Abstractn-ZnO/i-CdZnO thin film was grown on p-type Si substrate by plasma-assisted molecular-beam epitaxy (MBE). Rectifying I-V curves show typical diode characteristics. Cyan electroluminescence emissions at around 473 nm were observed when the diodes were forward-biased at room temperature. The emission intensity increases with the increase of the injection current. Room temperature photoluminescence verifies the electroluminescence emissions come from CdZnO layer.

Room-temperature ferromagnetism in (Mn, N)-codoped TiO2 films grown by plasma assisted molecular beam epitaxy

2008 ◽  
Vol 104 (9) ◽  
pp. 093914 ◽  
Author(s):  
X. Y. Li ◽  
S. X. Wu ◽  
L. M. Xu ◽  
Y. J. Liu ◽  
X. J. Xing ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
Tio2 Films ◽  
Codoped Tio2

GalnAsSb Materials for Thermophotovoltaics

1996 ◽  
Vol 450 ◽  
Author(s):  
C. A. Wang ◽  
G. W. Turner ◽  
M. J. Manfra ◽  
H. K. Choi ◽  
D. L. Spears
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Room Temperature Photoluminescence ◽  
P Type ◽  
First Time ◽  
Lattice Matched ◽  
Comparable Quality ◽  
Peak Emission

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

Room-Temperature Wafer Bonded Multi-Junction Solar Cell Grown by Solid State Molecular Beam Epitaxy

MRS Advances ◽  
2016 ◽  
Vol 1 (43) ◽  
pp. 2907-2916 ◽  
Author(s):  
Shulong Lu ◽  
Shiro Uchida
Keyword(s):  
Solar Cell ◽  
Molecular Beam Epitaxy ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Molecular Beam ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Device Structure ◽  
Junction Solar Cell

ABSTRACTWe studied the InGaP/GaAs//InGaAsP/InGaAs four-junction solar cells grown by molecular beam epitaxy (MBE), which were fabricated by the novel wafer bonding. In order to reach a higher conversion efficiency at highly concentrated illumination, heat generation should be minimized. We have improved the device structure to reduce the thermal and electrical resistances. Especially, the bond resistance was reduced to be the lowest value of 2.5 × 10-5 Ohm cm2 ever reported for a GaAs/InP wafer bond, which was obtained by the specific combination of p+-GaAs/n-InP bonding and by using room-temperature wafer bonding. Furthermore, in order to increase the short circuit current density (Jsc) of 4-junction solar cell, we have developed the quality of InGaAsP material by increasing the growth temperature from 490 °C to 510 °C, which leads to a current matching. In a result, an efficiency of 42 % at 230 suns of the four-junction solar cell fabricated by room-temperature wafer bonding was achieved.

Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)

1999 ◽  
Vol 595 ◽  
Author(s):  
U. Hömmerich ◽  
J. T. Seo ◽  
J. D. MacKenzie ◽  
C. R. Abernathy ◽  
R. Birkhahn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Excited States ◽  
Room Temperature ◽  
Molecular Beam ◽  
Average Lifetime ◽  
Green Luminescence ◽  
Si Substrates ◽  
Lifetime Analysis ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Er Doped

AbstractWe report on the luminescence properties of Er doped GaN grown prepared by metalorganic molecular beam epitaxy (MOMBE) and solid-source molecular beam epitaxy (SSMBE) on Si substrates. Both types of samples emitted characteristic 1.54 µm PL resulting from the intra-4f Er3+ transition 4I13/2→4I15/2. Under below-gap excitation the samples exhibited very similar 1.54 µm PL intensities. On the contrary, under above-gap excitation GaN: Er (SSMBE) showed ∼80 times more intense 1.54 µm PL than GaN: Er (MOMBE). In addition, GaN: Er (SSMBE) also emitted intense green luminescence at 537 nm and 558 nm, which was not observed from GaN: Er (MOMBE). The average lifetime of the green PL was determined to be 10.8 µs at 15 K and 5.5 µs at room temperature. A preliminary lifetime analysis suggests that the decrease in lifetime is mainly due to the strong thermalization between the 2H11/2 and 4S3/2 excited states. Nonradiative decay processes are expected to only weakly affect the green luminescence.

Sign in / Sign up

Export Citation Format

Share Document