Growth of GaAs1−xPx/GaAs and InAsxP1−x/InP strained quantum wells for optoelectronic devices by gas-source molecular beam epitaxy

H. Q. Hou; C. W. Tu

doi:10.1007/bf02655828

Growth of GaAs1−xPx/GaAs and InAsxP1−x/InP strained quantum wells for optoelectronic devices by gas-source molecular beam epitaxy

Journal of Electronic Materials ◽

10.1007/bf02655828 ◽

1992 ◽

Vol 21 (2) ◽

pp. 137-141 ◽

Cited By ~ 14

Author(s):

H. Q. Hou ◽

C. W. Tu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Optoelectronic Devices ◽

Strained Quantum Wells ◽

Gas Source

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InAsP/InP strained quantum wells grown by gas-source molecular-beam epitaxy on InP(100) and (111)B substrates

10.1117/12.175787 ◽

1994 ◽

Author(s):

Charles W. Tu ◽

Hong Q. Hou

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Strained Quantum Wells ◽

Gas Source

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Highly strained quantum wells grown on GaP and on an buffer layer by gas-source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(96)00185-6 ◽

1996 ◽

Vol 165 (3) ◽

pp. 210-214 ◽

Cited By ~ 2

Author(s):

W.G. Bi ◽

C.W. Tu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Buffer Layer ◽

Molecular Beam ◽

Strained Quantum Wells ◽

Gas Source ◽

Highly Strained

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Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

Journal of Applied Physics ◽

10.1063/1.348908 ◽

1991 ◽

Vol 69 (11) ◽

pp. 7942-7944 ◽

Cited By ~ 3

Author(s):

K. T. Shiralagi ◽

R. A. Puechner ◽

K. Y. Choi ◽

R. Droopad ◽

G. N. Maracas

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Wells ◽

Molecular Beam ◽

Gas Source

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Photoluminescence properties of GaNP/GaP multiple quantum wells grown by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.1313813 ◽

2000 ◽

Vol 77 (14) ◽

pp. 2180-2182 ◽

Cited By ~ 20

Author(s):

H. P. Xin ◽

C. W. Tu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Photoluminescence Properties ◽

Gas Source

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Properties of Strain Compensated Symmetrical Triangular Quantum Wells Composed of InGaAs/InAs Chirped Superlattice Grown Using Gas Source Molecular Beam Epitaxy

Chinese Physics Letters ◽

10.1088/0256-307x/25/2/101 ◽

2008 ◽

Vol 25 (2) ◽

pp. 726-729 ◽

Cited By ~ 4

Author(s):

Gu Yi ◽

Zhang Yong-Gang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Gas Source

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InGaAsP/InP multiple quantum wells grown by gas-source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(92)90384-u ◽

1992 ◽

Vol 120 (1-4) ◽

pp. 167-171 ◽

Cited By ~ 13

Author(s):

H.Q. Hou ◽

C.W. Tu

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Gas Source

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Optical properties of InAs1−xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy

Journal of Electronic Materials ◽

10.1007/s11664-003-0216-x ◽

2003 ◽

Vol 32 (4) ◽

pp. 244-248 ◽

Cited By ~ 5

Author(s):

Guan-Ru Chen ◽

Hao-Hsiung Lin ◽

Jyh-Shyang Wang ◽

Ding-Kang Shih

Keyword(s):

Optical Properties ◽

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Single Quantum ◽

Gas Source

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Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(95)00364-9 ◽

1996 ◽

Vol 158 (1-2) ◽

pp. 6-14 ◽

Cited By ~ 42

Author(s):

R.R. LaPierre ◽

T. Okada ◽

B.J. Robinson ◽

D.A. Thompson ◽

G.C. Weatherly

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Strained Layers ◽

Composition Modulation ◽

Gas Source

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Gas source molecular beam epitaxy of alternated tensile / compressive strained GaInAsP multiple quantum wells emitting at 1.5 μm

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90613-2 ◽

1993 ◽

Vol 127 (1-4) ◽

pp. 241-245 ◽

Cited By ~ 24

Author(s):

J.-Y. Emery ◽

C. Starck ◽

L. Goldstein ◽

A. Ponchet ◽

A. Rocher

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Gas Source

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Molecular beam epitaxy of semiconductor interfaces and quantum wells for advanced optoelectronic devices

Surface and Interface Analysis ◽

10.1002/sia.740120502 ◽

1988 ◽

Vol 12 (5) ◽

pp. 279-287 ◽

Cited By ~ 6

Author(s):

Klaus Ploog

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Optoelectronic Devices ◽

Semiconductor Interfaces

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