Optical polarization anisotropy of tensile strained InGaN/AlInN quantum wells for TM mode lasers

2010 ◽  
Vol 108 (8) ◽  
pp. 083108 ◽  
Keyword(s):  
Quantum Wells ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Tm Mode

Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy

MRS Bulletin ◽  
2009 ◽  
Vol 34 (5) ◽  
pp. 334-340 ◽  
Author(s):  
Mitsuru Funato ◽  
Yoichi Kawakami
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Optical Anisotropy ◽  
Optical Transition ◽  
Transition Probability ◽  
Device Fabrication ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Light Emitters ◽  
Novel Applications

AbstractSemipolar InGaN/GaN quantum wells (QWs) are quite attractive as visible light emitters. One of the reasons is that a better optical transition probability is expected because of weaker internal electric fields, compared to conventional polar QWs. In addition, in-plane optical polarization anisotropy, which is absent in conventional QWs, is another relevant property because it affects device design and also may provide a means for novel applications. We revealed that the in-plane optical anisotropy in semipolar QWs switched from one direction perpendicular to the [0001] crystal axis to the perpendicular direction as the In composition increases. This is a property unique to semipolar QWs and enables, for example, to make cavity mirrors of laser diodes by cleavage. In this article, we describe the concept of semipolar planes and fabrication of high-quality epitaxial films for semipolar QWs. Furthermore, we discuss device fabrication and optical polarization anisotropy.

Optical polarization anisotropy of quantum wells induced by a cubic anisotropy of the host material

2002 ◽  
Vol 13 (1) ◽  
pp. 24-35 ◽  
Author(s):  
S.M. Ryabchenko ◽  
Yu.G. Semenov ◽  
A.V. Komarov ◽  
T. Wojtowicz ◽  
G. Cywiński ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Host Material ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Cubic Anisotropy

scholarly journals Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hwan-Seop Yeo ◽  
Kwanjae Lee ◽  
Young Chul Sim ◽  
Seoung-Hwan Park ◽  
Yong-Hoon Cho
Keyword(s):  
Quantum Wire ◽  
Quantum Wires ◽  
Geometrical Shape ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Single Quantum ◽  
Group Iii ◽  
Highly Efficient ◽  
Group Iii Nitride ◽  
Size Controlled

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

Optical polarization relaxation inInxGa1−xAs-based quantum wells: Evidence of the interface symmetry-reduction effect

1998 ◽  
Vol 58 (16) ◽  
pp. R10179-R10182 ◽  
Author(s):  
T. Guettler ◽  
A. L. C. Triques ◽  
L. Vervoort ◽  
R. Ferreira ◽  
Ph. Roussignol ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Symmetry Reduction ◽  
Optical Polarization ◽  
Reduction Effect

Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots

2004 ◽  
Vol 84 (11) ◽  
pp. 1820-1822 ◽  
Author(s):  
P. Jayavel ◽  
H. Tanaka ◽  
T. Kita ◽  
O. Wada ◽  
H. Ebe ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Self Assembled

Control of optical polarization properties by manipulation of anisotropic strain in nonpolar m-plane GaInN/GaN quantum wells

2019 ◽  
Vol 114 (5) ◽  
pp. 052101 ◽  
Author(s):  
Fedor Alexej Ketzer ◽  
Philipp Horenburg ◽  
Philipp Henning ◽  
Ernst Ronald Korn ◽  
Heiko Bremers ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Polarization ◽  
Anisotropic Strain

Confinement effects on valence-subband character and polarization anisotropy in (112¯2) semipolar InGaN/GaN quantum wells

2012 ◽  
Vol 111 (7) ◽  
pp. 073113 ◽  
Author(s):  
Christopher Roberts ◽  
Qimin Yan ◽  
Mao-Sheng Miao ◽  
Chris G. Van de Walle
Keyword(s):  
Quantum Wells ◽  
Polarization Anisotropy ◽  
Confinement Effects
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