Confinement effects on valence-subband character and polarization anisotropy in (112¯2) semipolar InGaN/GaN quantum wells

2012 ◽  
Vol 111 (7) ◽  
pp. 073113 ◽  
Author(s):  
Christopher Roberts ◽  
Qimin Yan ◽  
Mao-Sheng Miao ◽  
Chris G. Van de Walle
Keyword(s):  
Quantum Wells ◽  
Polarization Anisotropy ◽  
Confinement Effects

Quasi-two-dimensional excitons in (Zn,Cd)Se/ZnSe quantum wells: Reduced exciton–LO-phonon coupling due to confinement effects

1992 ◽  
Vol 45 (11) ◽  
pp. 6037-6042 ◽  
Author(s):  
N. T. Pelekanos ◽  
J. Ding ◽  
M. Hagerott ◽  
A. V. Nurmikko ◽  
H. Luo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Two Dimensional ◽  
Phonon Coupling ◽  
Confinement Effects

Semipolar III Nitride Semiconductors: Crystal Growth, Device Fabrication, and Optical Anisotropy

MRS Bulletin ◽  
2009 ◽  
Vol 34 (5) ◽  
pp. 334-340 ◽  
Author(s):  
Mitsuru Funato ◽  
Yoichi Kawakami
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Optical Anisotropy ◽  
Optical Transition ◽  
Transition Probability ◽  
Device Fabrication ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Light Emitters ◽  
Novel Applications

AbstractSemipolar InGaN/GaN quantum wells (QWs) are quite attractive as visible light emitters. One of the reasons is that a better optical transition probability is expected because of weaker internal electric fields, compared to conventional polar QWs. In addition, in-plane optical polarization anisotropy, which is absent in conventional QWs, is another relevant property because it affects device design and also may provide a means for novel applications. We revealed that the in-plane optical anisotropy in semipolar QWs switched from one direction perpendicular to the [0001] crystal axis to the perpendicular direction as the In composition increases. This is a property unique to semipolar QWs and enables, for example, to make cavity mirrors of laser diodes by cleavage. In this article, we describe the concept of semipolar planes and fabrication of high-quality epitaxial films for semipolar QWs. Furthermore, we discuss device fabrication and optical polarization anisotropy.

Enhancement of the in-plane effective mass of electrons in modulation-dopedInxGa1−xAs quantum wells due to confinement effects

1993 ◽  
Vol 48 (4) ◽  
pp. 2328-2334 ◽  
Author(s):  
G. Hendorfer ◽  
M. Seto ◽  
H. Ruckser ◽  
W. Jantsch ◽  
M. Helm ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Confinement Effects

Enhancement of localization and confinement effects in quaternary group-III nitride multi-quantum wells on SiC substrate

2005 ◽  
Vol 202 (4) ◽  
pp. 642-646 ◽  
Author(s):  
S. Anceau ◽  
P. Lefebvre ◽  
T. Suski ◽  
L. Konczewicz ◽  
H. Hirayama ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Confinement Effects ◽  
Group Iii ◽  
Group Iii Nitride

Observation of quantum confinement effects in strained Si0.84Ge0.16/Si quantum wells at room temperature

1993 ◽  
Vol 62 (21) ◽  
pp. 2713-2715 ◽  
Author(s):  
Y. F. Chen ◽  
Y. T. Dai ◽  
H. P. Chou ◽  
D. C. Chang ◽  
C. Y. Chang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Confinement Effects ◽  
Quantum Confinement Effects

Piezoelectric field and confinement effects on the dielectric function spectrum of InGaN/GaN quantum wells

2000 ◽  
Vol 76 (1) ◽  
pp. 79-81 ◽  
Author(s):  
A. Ramakrishnan ◽  
J. Wagner ◽  
M. Kunzer ◽  
H. Obloh ◽  
K. Köhler ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Dielectric Function ◽  
Confinement Effects ◽  
Piezoelectric Field

Magnetic-field and confinement effects on the effective Landé g factor in AlxGa1-xAs parabolic quantum wells

2010 ◽  
Vol 74 (3) ◽  
pp. 319-329 ◽  
Author(s):  
A. Bruno-Alfonso ◽  
F. E. López ◽  
N. Raigoza ◽  
E. Reyes-Gómez
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Confinement Effects ◽  
G Factor ◽  
Parabolic Quantum Wells
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