Initial sequence and kinetics of silicide formation in cobalt/amorphous‐silicon multilayer thin films

1991 ◽  
Vol 70 (8) ◽  
pp. 4287-4294 ◽  
Author(s):  
H. Miura ◽  
E. Ma ◽  
C. V. Thompson
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Multilayer Thin Films ◽  
Silicide Formation ◽  
Initial Sequence ◽  
Kinetics Of

Kinetics and Thermodynamics of Amorphous Silicide Formation in Nickel/Amorphous-Silicon Multilayer Thin Films

1989 ◽  
Vol 148 ◽  
Author(s):  
L.A. Clevenger ◽  
C.V. Thompson ◽  
R.R. de Avillez ◽  
K.N. Tu
Keyword(s):  
Thin Films ◽  
Kinetic Analysis ◽  
Amorphous Silicon ◽  
Nickel Silicide ◽  
Multilayer Thin Films ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Kinetic Barriers

ABSTRACTCross-sectional transmission and scanning transmission electron microscopy and thermodynamic and kinetic analysis have been used to characterize amorphous and crystalline nickel silicide formation in nickel/amorphous-silicon multilayer thin films. An amorphous-nickelsilicide layer was formed between the nickel and amorphous-silicon layers during deposition. Heating caused crystalline Ni2Si to form at the nickel/amorphous-nickel-silicide interface. The composition of the amorphous-siicide was determined to be approximately 1 Ni atom to 1 Si atom. Thermodynamic analysis indicates that amorphous-nickel-silicide could be in equilibrium with nickel and amorphous-silicon if there were kinetic barriers to the formation of the crystalline silicides. Kinetic analysis indicates that the “nucleation surface energies” of the crystalline silicides, other than Ni3Si, must be 1.6 to 3.0 times larger than that of amorphous-nickel-silicide.

ChemInform Abstract: Kinetics and Thermodynamics of Amorphous Silicide Formation in Metal/ Amorphous-Silicon Multilayer Thin Films

ChemInform ◽  
2010 ◽  
Vol 22 (37) ◽  
pp. no-no
Author(s):  
C. V. THOMPSON ◽  
L. A. CLEVENGER ◽  
R. DEAVILLEZ ◽  
E. MA ◽  
H. MIURA
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Multilayer Thin Films ◽  
Silicide Formation ◽  
Kinetics And Thermodynamics

Adsorption kinetics of tannic acid onto an albumin-terminated multilayer thin films

2018 ◽  
Vol 297 (3) ◽  
pp. 417-422
Author(s):  
Hooi Hong Lau ◽  
Nikolai L. Yakovlev ◽  
Chui Ping Ooi ◽  
Maxim V. Kiryukhin
Keyword(s):  
Thin Films ◽  
Tannic Acid ◽  
Adsorption Kinetics ◽  
Multilayer Thin Films ◽  
Kinetics Of

scholarly journals Kinetics of silicide formation by thin films of V on Si and SiO2 substrates

1974 ◽  
Vol 45 (8) ◽  
pp. 3304-3308 ◽  
Author(s):  
H. Kräutle ◽  
M‐A. Nicolet ◽  
J. W. Mayer
Keyword(s):  
Thin Films ◽  
Silicide Formation ◽  
Kinetics Of

Kinetics of silicide formation in chromium‐amorphous silicon multilayered films

1991 ◽  
Vol 59 (4) ◽  
pp. 449-451 ◽  
Author(s):  
T. E. Schlesinger ◽  
R. C. Cammarata ◽  
S. M. Prokes
Keyword(s):  
Amorphous Silicon ◽  
Silicide Formation ◽  
Multilayered Films ◽  
Kinetics Of

Explosive silicidation in nickel/amorphous‐silicon multilayer thin films

1990 ◽  
Vol 67 (6) ◽  
pp. 2894-2898 ◽  
Author(s):  
L. A. Clevenger ◽  
C. V. Thompson ◽  
K. N. Tu
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Multilayer Thin Films

Kinetics and Thermodynamics of Amorphous Silicide Formation in Metal/Amorphous-Silicon Multilayer Thin Films

1990 ◽  
Vol 187 ◽  
Author(s):  
C. V. Thompson ◽  
L. A. Clevenger ◽  
R. DeAvillez ◽  
E. Ma ◽  
H. Miura
Keyword(s):  
Amorphous Silicon ◽  
Multilayer Thin Films ◽  
Silicide Formation ◽  
Scanning Calorimetry ◽  
Crystalline Phases ◽  
X Ray ◽  
Calorimetric Measurements ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Original Metal

AbstractFormation of intermetallic phases upon heating of films composed of alternating layers of metal and amorphous silicon has been studied using power-compensated differential scanning calorimetry, crosssectional transmission electron microscopy, and thin film x-ray diffractrometry. Results for Ni/amorphous-Si (Ni/a-Si), Ti/a-Si, V/a- Si, and Co/a-Si are reviewed. In the first three cases, an amorphous silicide is the first phase to form. Further heating leads to thickening of the amorphous silicide and eventually to formation and growth of layers of crystalline silicides. In the case of Co/a-Si multilayer films, a crystalline silicide (CoSi) appears to be the first phase to form. In these systems calorimetric measurements suggest that there are barriers to nucleation of the crystalline phases, even though the energy reduction that would accompany their formation from pure components is large. It is suggested that interdiffusion may precede the formation of new phases at the original metal/a-Si interfaces, resulting in a significant decrease in the driving force for nucleation of the crystalline phases.

Solid state reactions in cobalt/amorphous-silicon multilayer thin films

1996 ◽  
Vol 288 (1-2) ◽  
pp. 309-314 ◽  
Author(s):  
Jae Yeob Shim ◽  
Joon Seop Kwak ◽  
Hong Koo Baik
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Amorphous Silicon ◽  
Solid State Reactions ◽  
Multilayer Thin Films
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