Explosive silicidation in nickel/amorphous‐silicon multilayer thin films

1990 ◽  
Vol 67 (6) ◽  
pp. 2894-2898 ◽  
Author(s):  
L. A. Clevenger ◽  
C. V. Thompson ◽  
K. N. Tu
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Multilayer Thin Films

Solid state reactions in cobalt/amorphous-silicon multilayer thin films

1996 ◽  
Vol 288 (1-2) ◽  
pp. 309-314 ◽  
Author(s):  
Jae Yeob Shim ◽  
Joon Seop Kwak ◽  
Hong Koo Baik
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Amorphous Silicon ◽  
Solid State Reactions ◽  
Multilayer Thin Films

Amorphous silicon/carbon multilayer thin films as the anode for high rate rechargeable Li-ion batteries

2013 ◽  
Vol 97 ◽  
pp. 37-39 ◽  
Author(s):  
Jun Wang ◽  
Yongfeng Tong ◽  
Zhuang Xu ◽  
Weihua Li ◽  
Pengxun Yan ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
High Rate ◽  
Multilayer Thin Films ◽  
Li Ion Batteries ◽  
Silicon Carbon ◽  
Li Ion

Kinetics and Thermodynamics of Amorphous Silicide Formation in Nickel/Amorphous-Silicon Multilayer Thin Films

1989 ◽  
Vol 148 ◽  
Author(s):  
L.A. Clevenger ◽  
C.V. Thompson ◽  
R.R. de Avillez ◽  
K.N. Tu
Keyword(s):  
Thin Films ◽  
Kinetic Analysis ◽  
Amorphous Silicon ◽  
Nickel Silicide ◽  
Multilayer Thin Films ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Kinetic Barriers

ABSTRACTCross-sectional transmission and scanning transmission electron microscopy and thermodynamic and kinetic analysis have been used to characterize amorphous and crystalline nickel silicide formation in nickel/amorphous-silicon multilayer thin films. An amorphous-nickelsilicide layer was formed between the nickel and amorphous-silicon layers during deposition. Heating caused crystalline Ni2Si to form at the nickel/amorphous-nickel-silicide interface. The composition of the amorphous-siicide was determined to be approximately 1 Ni atom to 1 Si atom. Thermodynamic analysis indicates that amorphous-nickel-silicide could be in equilibrium with nickel and amorphous-silicon if there were kinetic barriers to the formation of the crystalline silicides. Kinetic analysis indicates that the “nucleation surface energies” of the crystalline silicides, other than Ni3Si, must be 1.6 to 3.0 times larger than that of amorphous-nickel-silicide.

ChemInform Abstract: Kinetics and Thermodynamics of Amorphous Silicide Formation in Metal/ Amorphous-Silicon Multilayer Thin Films

ChemInform ◽  
2010 ◽  
Vol 22 (37) ◽  
pp. no-no
Author(s):  
C. V. THOMPSON ◽  
L. A. CLEVENGER ◽  
R. DEAVILLEZ ◽  
E. MA ◽  
H. MIURA
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Multilayer Thin Films ◽  
Silicide Formation ◽  
Kinetics And Thermodynamics

Characterization of reactive phase formation in sputter-deposited Ni/Al multilayer thin films using TEM

1996 ◽  
Vol 54 ◽  
pp. 1000-1001
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Dark Field ◽  
Nickel Layer ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Constant Heating

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

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