cw laser crystallization of amorphous silicon: Thermal or athermal process

1991 ◽  
Vol 70 (8) ◽  
pp. 4637-4639 ◽  
Author(s):  
M. Ivanda ◽  
K. Furić ◽  
O. Gamulin ◽  
M. Peršin ◽  
D. Gracin
Keyword(s):  
Amorphous Silicon ◽  
Laser Crystallization ◽  
Cw Laser

CW laser crystallization of amorphous silicon; dependence of amorphous silicon thickness and pattern width on the grain size

2006 ◽  
Vol 511-512 ◽  
pp. 243-247 ◽  
Author(s):  
Seong Jin Park ◽  
Yu Mi Ku ◽  
Ki Hyung Kim ◽  
Eun Hyun Kim ◽  
Byung Kwon Choo ◽  
...  
Keyword(s):  
Grain Size ◽  
Amorphous Silicon ◽  
Laser Crystallization ◽  
Cw Laser ◽  
Silicon Thickness ◽  
Pattern Width

scholarly journals Temperature dependent optical properties of amorphous silicon for diode laser crystallization

2012 ◽  
Vol 20 (S6) ◽  
pp. A856 ◽  
Author(s):  
Joachim Bergmann ◽  
Martin Heusinger ◽  
Gudrun Andrä ◽  
Fritz Falk
Keyword(s):  
Optical Properties ◽  
Amorphous Silicon ◽  
Diode Laser ◽  
Laser Crystallization ◽  
Temperature Dependent

Double Laser Crystallization (DLC) of 50 Nanometer and 20 Nanometer Amorphous Silicon Film for Thin Film Transistors (TFTS) Application

2005 ◽  
Author(s):  
Li Xu ◽  
Costas P. Griogoropoulos
Keyword(s):  
Electron Microscope ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
Solidification Process ◽  
Grain Structure ◽  
Laser Crystallization ◽  
Surface Reflection ◽  
Microscope Images ◽  
20 Nm

Ultra-large grain poly-crystalline silicon has been formed in 20 nm and 50 nm amorphous silicon films by the double laser crystallization (DLC) method. Surface reflection properties of such thin films upon laser irradiation were calculated. In-situ images were captured to monitor the transient melting and solidification process of 50 nm silicon film in order to understand the crystallization induced by steep laser intensity gradients. SEM (scanning electron microscope) images of crystallized 50 nm film after Secco etch revealed grain size up to 10 m while plane-view TEM (transmission electron microscope) images of 50 nm film also showed perfect crystalline structure inside the grains. AFM (atomic force microscope) images were also taken to show the topology of the grain structure and RMS of 20 nm film.

CW Laser Crystallization of Soi Thermal analysis of the most critical parameters

1983 ◽  
Vol 23 ◽  
Author(s):  
J.M. Hode ◽  
J.P. Joly ◽  
P. Jeuch
Keyword(s):  
Thermal Analysis ◽  
Phase Change ◽  
Latent Heat ◽  
Layer Structure ◽  
Thermal Modeling ◽  
Critical Parameters ◽  
Laser Crystallization ◽  
Cw Laser ◽  
Analytical Expressions ◽  
Induced Crystallization

ABSTRACTWe present an overview of the thermal modeling of CW laser induced crystallization of SOI. The dynamical case for a three-layer structure is derived. Effects of the phase change (increase in reflectivity, latent heat) are also treated. Analytical expressions are given and the models are compared to experiment.

Excimer Laser Crystallized Amorphous Silicon Films: Effects of Shot Density and Substrate Temperature

1991 ◽  
Vol 219 ◽  
Author(s):  
R. I. Johnson ◽  
G. B. Anderson ◽  
S. E. Ready ◽  
J. B. Boyce
Keyword(s):  
Energy Density ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Laser Energy ◽  
Silicon Films ◽  
Laser Energy Density ◽  
Laser Crystallization ◽  
Average Grain Size ◽  
Substrate Temperatures

ABSTRACTLaser crystallization of a-Si thin films has been shown to produce materials with enhanced electrical properties and devices that are faster and capable of carrying higher currents. The quality of these polycrystalline films depends on a number of parameters such as laser energy density, shot density, substrate temperature, and the quality of the starting material. We find that the average grain size and transport properties of laser crystallized amorphous silicon films increase substantially with laser energy density, increase only slightly with laser shot density, and are unaffected by substrate temperatures of up to 400°C. The best films are those processed in vacuum but films of fair quality can also be obtained in air and nitrogen atmospheres.

Crystallization of amorphous silicon on silica by cw laser irradiation

1982 ◽  
Vol 40 (2) ◽  
pp. 166-168 ◽  
Author(s):  
M. A. Bösch ◽  
R. A. Lemons
Keyword(s):  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Cw Laser

Carrier Transport in Polycrystalline and Amorphous Silicon Thin Film Transistors

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Sameshima ◽  
M. Sekiya ◽  
M. Hara ◽  
N. Sano ◽  
A. Kohno
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Carrier Transport ◽  
Defect Density ◽  
Inversion Layer ◽  
Chemical Vapor ◽  
Laser Crystallization ◽  
Silicon Thin Film ◽  
Plasma Chemical Vapor Deposition

ABSTRACTThe technologies of laser crystallization and methods of SiO2 formation in remote plasma chemical vapor deposition or SiO evaporation with an oxygen ambient realize the fabrication of n-channel polycrystalline and amorphous silicon thin film transistors (poly-Si and a-Si TFTs) at a temperature lower than 300 °C. The defect density was achieved to be 2∼3×1011 cm−2eV−1 and threshold voltage was about IV for both TFTs. The maximum field effect mobility was 600 cm2/Vs for poly-Si TFTs and 2.6 cm2/Vs for a-Si TFTs. The mobility of poly-Si TFT decreased as the gate voltage increases. This is interpreted as that the electrons are confined in the narrow inversion layer and electron scattering with phonon is enhanced for higher normal electric field.

Laser crystallization and structural characterization of hydrogenated amorphous silicon thin films

1999 ◽  
Vol 85 (11) ◽  
pp. 7914-7918 ◽  
Author(s):  
D. Toet ◽  
P. M. Smith ◽  
T. W. Sigmon ◽  
T. Takehara ◽  
C. C. Tsai ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Structural Characterization ◽  
Hydrogenated Amorphous Silicon ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous
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