Preparation and magneto‐optic properties of Bi‐substituted yttrium iron garnet thin films by metalorganic chemical vapor deposition

1991 ◽  
Vol 69 (6) ◽  
pp. 3566-3570 ◽  
Author(s):  
Masaru Okada ◽  
Shigehisa Katayama ◽  
Koji Tominaga
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Yttrium Iron Garnet ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Yttrium Iron ◽  
Iron Garnet ◽  
Metalorganic Chemical ◽  
Magneto Optic

Metalorganic Chemical Vapor Deposition of Magneto-Optical Ce:YIG Thin Films

1998 ◽  
Vol 517 ◽  
Author(s):  
Yi-Qun Li ◽  
Mondher Cherif ◽  
Jankang Huang ◽  
Wayne Liu ◽  
Qiushui Chen
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Sputter Deposited ◽  
Iron Garnet ◽  
Inp Substrates ◽  
Metalorganic Chemical

AbstractThe deposition technologies of rare-earth substituted yttrium iron garnet (RE:YIG) thin films with a large Faraday rotation and their applications are briefly overviewed. Highly cerium substituted YIG films were successfully deposited on (111) GGG, (211) GGG, (100) MgO, and MgO buffered GaAs and InP substrates by single-liquid-source metalorganic chemical vapor deposition. Ce-YIG thin films can be epitaxially grown on lattice matched GGG substrates at a temperature as low as 600°C. They have excellent optical and magnetic properties along with high Faraday rotations. The films deposited on single crystal (100) MgO substrates are polycrystalline and have good magnetic properties. Sputter deposited MgO buffer layer was demonstrated for preventing the decomposition and chemical reaction of GaAs and LnP substrates resulting in successful deposition of YIG films on GaAs and InP substrates at a substrate temperature of 550°C. The films grown on MgO buffered GaAs substrates possessed good magnetic properties.

Mechanistic study of metalorganic chemical vapor deposition of (Ba,Sr)TiO3 thin films

2000 ◽  
Vol 87 (10) ◽  
pp. 7430-7437 ◽  
Author(s):  
Y. Gao ◽  
C. L. Perkins ◽  
S. He ◽  
P. Alluri ◽  
T. Tran ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Mechanistic Study ◽  
Metalorganic Chemical

Growth of Epitaxial BaTiO3 Thin Films at 600°C by Metalorganic Chemical Vapor Deposition

1994 ◽  
Vol 361 ◽  
Author(s):  
D.L. Kaiser ◽  
M.D. Vaudin ◽  
L.D. Rotter ◽  
Z.L. Wang ◽  
J.P. Cline ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electron Diffraction ◽  
Harmonic Generation ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Second Harmonic ◽  
Chemical Vapor ◽  
X Ray ◽  
Metalorganic Chemical

ABSTRACTMetalorganic chemical vapor deposition (MOCVD) was used to deposit epitaxial BaTiO3 thin films on (100) MgO substrates at 600°C. The metalorganic precursors employed in the deposition experiments were hydrated Ba(thd)2 (thd = C11H19O2) and titanium isopropoxide. The films were analyzed by means of transmittance spectroscopy, wavelength dispersive x-ray spectrometry, secondary ion mass spectrometry depth profiling, x-ray diffraction, high resolution transmission electron microscopy, selected area electron diffraction, nanoscale energy dispersive x-ray spectrometry and second harmonic generation measurements. There was no evidence for interdiffusion between the film and substrate. The x-ray and electron diffraction studies showed that the films were oriented with the a-axis normal to the substrate surface, whereas second harmonic generation measurements showed that the films had some c-axis character.

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