p‐dhybridization of the valence bands of copper indium disulfide

1991 ◽  
Vol 69 (6) ◽  
pp. 3772-3774 ◽  
Author(s):  
T. M. Hsu
Keyword(s):  
Copper Indium Disulfide ◽  
Copper Indium ◽  
Valence Bands

scholarly journals Metal-Doped Copper Indium Disulfide Heterostructure: Environment-Friendly Hole-Transporting Material toward Photovoltaic Application in Organic-Inorganic Perovskite Solar Cell

Proceedings ◽  
2019 ◽  
Vol 41 (1) ◽  
pp. 74
Author(s):  
Kobra Valadi ◽  
Ali Maleki
Keyword(s):  
Photovoltaic Performance ◽  
Perovskite Solar Cells ◽  
Environment Friendly ◽  
Inorganic Perovskite ◽  
Copper Indium Disulfide ◽  
Photovoltaic Application ◽  
Copper Indium ◽  
Hole Transporting ◽  
Hole Transporting Material ◽  
Metal Doped

In this plan, we use Praseodymium metal-doped copper indium disulfide (Pr-doped CIS) heterostructure as hole-transporting materials (HTMs) in the FTO/TiO2/Perovskite absorber/HTM/ Au device. And photovoltaic performance of these Pr-doped CIS heterostructure was investigated in the fabrication of the organic-inorganic perovskite solar cells (organic-inorganic PSCs).

scholarly journals In Situ Microgravimetric Study of Ion Exchanges in the Ternary Cu-In-S System Prepared by Atomic Layer Deposition

Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 645
Author(s):  
Harold Le Tulzo ◽  
Nathanaelle Schneider ◽  
Frédérique Donsanti
Keyword(s):  
Atomic Layer Deposition ◽  
Reaction Mechanisms ◽  
Atomic Layer ◽  
Side Reactions ◽  
Chemical Surface ◽  
Copper Indium Disulfide ◽  
Layer Deposition ◽  
Copper Indium ◽  
Gas Phase Ion

Reaction mechanisms during the growth of multinary compounds by atomic layer deposition can be complex, especially for sulfide materials. For instance, the deposition of copper indium disulfide (CuInS2) shows a non-direct correlation between the cycle ratio, the growth per cycle of each binary growth cycles, i.e., CuxS and In2S3, and the film composition. This evidences side reactions that compete with the direct Atomic Layer Deposition (ALD) growth reactions and makes the deposition of large films very challenging. To develop a robust upscalable recipe, it is essential to understand the chemical surface reactions. In this study, reaction mechanisms in the Cu-In-S ternary system were investigated in-situ by using a quartz crystal microbalance system to monitor mass variations. Pure binary indium sulfide (In2S3) and copper sulfide (CuxS) thin film depositions on Al2O3 substrate were first studied. Then, precursors were transported to react on CuxS and In2S3 substrates. In this paper, gas-phase ion exchanges are discussed based on the recorded mass variations. A cation exchange between the copper precursor and the In2S3 is highlighted, and a solution to reduce it by controlling the thickness deposited for each stack of binary materials during the CuInS2 deposition is finally proposed.

The Annealing of Phosphorus-Ion-Implanted Copper Indium Disulfide by A Pulsed Electron Beam

1985 ◽  
Vol 52 ◽  
Author(s):  
J. L. Lin ◽  
J. T. Lue ◽  
H. Y. Leng ◽  
M. H. Yang ◽  
H. L. Hwang
Keyword(s):  
Electron Beam ◽  
Carrier Concentration ◽  
Hole Mobility ◽  
Etching Technique ◽  
Pulsed Electron Beam ◽  
Copper Indium Disulfide ◽  
Copper Indium ◽  
Irradiation Energy ◽  
P Type ◽  
Effective Carrier

ABSTRACTPulsed Electron beam annealing of phosphorus implanted CuInS2 has been found to be an efficient method in p-type doping of CuInS2. A sheet resistance as low as 10.1 Ω/‮, a sheet carrier concentration as high as l.0 ×1016 cm−2, and a hole mobility as high as 499 cm2 /V.s have been obtained. The irradiation energy density for the best doping condition was determined to be in the ranges between 11–13 J/cm2. Using Van der Pauw/Hall technique in conjunction with a chemical etching technique, the effective carrier concentration profiles have been determined with a maximum carrier concentration of ∼9×1019cm−3. Excellent p-n CuInS2 homojunctions have been fabricated by electron-beam pulse annealing with anideality factor of 1.75.

Optical and structural characterization of copper indium disulfide thin films

2001 ◽  
Vol 22 (7) ◽  
pp. 585-589 ◽  
Author(s):  
D.O. Henderson ◽  
R. Mu ◽  
A. Ueda ◽  
M.H. Wu ◽  
E.M. Gordon ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Copper Indium Disulfide ◽  
Copper Indium

scholarly journals Copper Indium Disulfide Quantum Dot Light Emitting Diodes for Display and Lighting Technologies

2019 ◽  
Vol 20 (3) ◽  
Author(s):  
Stefano Barba
Keyword(s):  
Reaction Time ◽  
Quantum Dot ◽  
Large Scale ◽  
Light Emitting Diodes ◽  
Device Fabrication ◽  
Device Structure ◽  
Light Emitting ◽  
High Performing ◽  
Copper Indium Disulfide ◽  
Copper Indium

While significant advances in the development of quantum dot light emitting diodes (QLEDs) have been reported, these devices are primarily based on cadmium chalcogenide quantum dot (QD) materials. Both environmental and health concerns arise due to the toxicity of cadmium and consequently, alternative less toxic QDs must be developed for large scale QLED applications such as display and solid state lighting technologies.  In this work, copper indium disulfide (CIS) was investigated as an alternative QD material for QLED applications. Through experimentation with material synthesis and device fabrication, this project aimed to develop high performing CIS QLEDs. Several synthetic approaches were experimented with and it was determined that the injection of shorter chain 1-octanethoil as sulfur precursor with extensive shell reaction time resulted in highly luminescent QDs.  Single color QLEDs were fabricated based on typical device structure, using highly luminescent synthesized CIS QDs as the emissive layer in multilayer devices. Varying the shell reaction time of QDs in order to vary shell thickness resulted in significant differences in device performance. Using thicker shell QDs, high performing devices were obtained with the best performing QLEDs displaying a high peak current efficiency of 14.7 cd/A and high external quantum efficiency of 5.2%.

Growth of Copper Indium Disulfide Nano-rods using Anodized Aluminum Nano-mask

2008 ◽  
Author(s):  
Charles Chee. Surya ◽  
Hong Lam ◽  
Chung Pui Chan ◽  
Zhong Wei Zhang ◽  
Chang Fei Zhu ◽  
...  
Keyword(s):  
Anodized Aluminum ◽  
Copper Indium Disulfide ◽  
Copper Indium ◽  
Nano Rods

Fabrication of Copper-Indium-Disulfide Films onto Mo/Glass Substrates Using Pulsed Laser Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
R. Mu ◽  
M.H. Wu ◽  
Y. C. Liu ◽  
A. Ueda ◽  
D.O. Henderson ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Thermal Annealing ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Copper Indium Disulfide ◽  
Glass Substrates ◽  
Pure Silica ◽  
Copper Indium ◽  
Deposited Film

AbstractPico-second pulsed laser deposition (PLD) was employed to fabricate copper indium disulfide (CIS) thin films onto pure silica and Mo coated glass substrates. By properly preparing the target materials and controlling the elemental ratio of the Cu, In and S in the deposited film followed by post-thermal annealing, good quality copper-indium-disulfide(CIS) films can be obtained. A series of characterizations were conducted including XRD, RBS, IR, UV-Vis, AFM and STM analyses.

Studies on Phosphorus-Implantation and the Annealing of Cadmium Telluride and Copper Indium Disulfide

1989 ◽  
Vol 147 ◽  
Author(s):  
Y. J. Hsu ◽  
H. L. Hwang ◽  
H. Y. Ueng
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Electron Beam ◽  
Cadmium Telluride ◽  
Pulse Electron Beam ◽  
Thermal Method ◽  
Pulse Electron ◽  
Paramagnetic Resonance ◽  
Copper Indium Disulfide ◽  
Copper Indium ◽  
Electron Paramagnetic

AbstractThe doping efficiencies obtained in phosphorus-implanted cadmium telluride and copper indium disulfide annealed by pulse electron beam were higher than those annealed by conventional thermal method. To get insights into this phenomenon, electron paramagnetic resonance measurements were performed for both crystals at various stages during the doping process. The results indicated that the pulse electron beam annealing could effectively eliminate the phosphorus interstitials in the implanted crystals but the thermal annealing could not. This shows the significant effect of melting crystals by pulse electron beam annealing to obtain high doping efficiencies.

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