Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectrics for advanced complementary metal–oxide–semiconductor technology

Quazi Deen Mohd Khosru; Anri Nakajima; Takashi Yoshimoto; Shin Yokoyama

doi:10.1063/1.1420586

Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectrics for advanced complementary metal–oxide–semiconductor technology

Applied Physics Letters ◽

10.1063/1.1420586 ◽

2001 ◽

Vol 79 (21) ◽

pp. 3488-3490 ◽

Cited By ~ 7

Author(s):

Quazi Deen Mohd Khosru ◽

Anri Nakajima ◽

Takashi Yoshimoto ◽

Shin Yokoyama

Keyword(s):

Silicon Nitride ◽

Metal Oxide ◽

Gate Dielectrics ◽

Complementary Metal Oxide Semiconductor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Soft Breakdown

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Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal–oxide–semiconductor technology

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1491550 ◽

2002 ◽

Vol 20 (4) ◽

pp. 1406 ◽

Cited By ~ 7

Author(s):

Anri Nakajima ◽

Quazi Deen Mohd Khosru ◽

Takashi Yoshimoto ◽

Toshirou Kidera ◽

Shin Yokoyama

Keyword(s):

Silicon Nitride ◽

Low Temperature ◽

Metal Oxide ◽

Gate Dielectrics ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Soft Breakdown

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Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1320847 ◽

2000 ◽

Vol 77 (18) ◽

pp. 2855-2857 ◽

Cited By ~ 25

Author(s):

Anri Nakajima ◽

Takashi Yoshimoto ◽

Toshiro Kidera ◽

Katsunori Obata ◽

Shin Yokoyama ◽

...

Keyword(s):

Silicon Nitride ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide–nitride gate dielectrics with nitrided crystalline silicon–dielectric interfaces for application in advanced complementary metal–oxide–semiconductor devices

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581818 ◽

1999 ◽

Vol 17 (4) ◽

pp. 1340-1351 ◽

Cited By ~ 15

Author(s):

G. Lucovsky

Keyword(s):

Silicon Nitride ◽

Metal Oxide ◽

Crystalline Silicon ◽

Gate Dielectrics ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Nitride Films ◽

Dielectric Interfaces ◽

Reaction Annealing

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Characterization of atomic-layer-deposited silicon nitride/SiO[sub 2] stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1387450 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1138 ◽

Cited By ~ 10

Author(s):

Anri Nakajima ◽

Takashi Yoshimoto ◽

Toshirou Kidera ◽

Katsunori Obata ◽

Shin Yokoyama ◽

...

Keyword(s):

Silicon Nitride ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal–oxide–semiconductor technology

Journal of Applied Physics ◽

10.1063/1.4795170 ◽

2013 ◽

Vol 113 (10) ◽

pp. 103106 ◽

Cited By ~ 21

Author(s):

Kaikai Xu ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Quantum Efficiency ◽

Light Emitting Diode ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Light Emitting

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The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Chinese Physics B ◽

10.1088/1674-1056/20/12/129401 ◽

2011 ◽

Vol 20 (12) ◽

pp. 129401 ◽

Cited By ~ 2

Author(s):

Jun-Rui Qin ◽

Shu-Ming Chen ◽

Bi-Wei Liu ◽

Zheng Liu ◽

Bin Liang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Charge Collection ◽

Single Event ◽

Semiconductor Technology ◽

Modulation Effect ◽

Single Event Transient ◽

Substrate Doping

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Soft Error Hardened Memory Design for Nanoscale Complementary Metal Oxide Semiconductor Technology

IEEE Transactions on Reliability ◽

10.1109/tr.2015.2410275 ◽

2015 ◽

Vol 64 (2) ◽

pp. 596-602 ◽

Cited By ~ 12

Author(s):

Jing Guo ◽

Liyi Xiao ◽

Tianqi Wang ◽

Shanshan Liu ◽

Xu Wang ◽

...

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Soft Error ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Memory Design

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Design and demonstration of antenna-coupled Schottky diodes in a foundry complementary metal-oxide semiconductor technology for electronic detection of far-infrared radiation

Journal of Applied Physics ◽

10.1063/1.5083689 ◽

2019 ◽

Vol 125 (19) ◽

pp. 194501 ◽

Cited By ~ 3

Author(s):

Z. Ahmad ◽

A. Lisauskas ◽

H. G. Roskos ◽

K. K. O

Keyword(s):

Metal Oxide ◽

Infrared Radiation ◽

Schottky Diodes ◽

Complementary Metal Oxide Semiconductor ◽

Far Infrared ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

Electronic Detection ◽

Far Infrared Radiation

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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of Electronic Materials ◽

10.1007/s11664-004-0220-9 ◽

2004 ◽

Vol 33 (8) ◽

pp. 912-915 ◽

Cited By ~ 12

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H. -J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

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