scholarly journals Publisher's Note: “Carrier recombination process and magneto- photoluminescence in Zn1−xCoxO layers” [J. Appl. Phys. 108, 013502 (2010)]

2010 ◽  
Vol 108 (9) ◽  
pp. 099902
Author(s):  
Zhiyan Xiao ◽  
Hiroaki Matsui ◽  
Kouichi Katayama ◽  
Kensuke Miyajima ◽  
Tadashi Itoh ◽  
...  
Keyword(s):  
Recombination Process ◽  
Carrier Recombination

Carrier recombination process and magneto-photoluminescence in Zn1−xCoxO layers

2010 ◽  
Vol 108 (1) ◽  
pp. 013502 ◽  
Author(s):  
Zhiyan Xiao ◽  
Hiroaki Matsui ◽  
Kouichi Katayama ◽  
Kensuke Miyajima ◽  
Tadashi Itoh ◽  
...  
Keyword(s):  
Recombination Process ◽  
Carrier Recombination

Investigation of the carrier recombination process in undoped barium disilicide epitaxial films

2012 ◽  
Author(s):  
Kosuke O. Hara ◽  
Noritaka Usami ◽  
Katsuaki Toh ◽  
Masakazu Baba ◽  
Kaoru Toko ◽  
...  
Keyword(s):  
Epitaxial Films ◽  
Recombination Process ◽  
Carrier Recombination

Electrical conduction mechanism and photon-generated carrier recombination process in amorphous InSb films

2011 ◽  
Vol 11 (3) ◽  
pp. 620-623 ◽  
Author(s):  
Yanping Yao ◽  
Chunling Liu ◽  
Haidong Qi ◽  
Xi Chang ◽  
Chunwu Wang ◽  
...  
Keyword(s):  
Electrical Conduction ◽  
Conduction Mechanism ◽  
Recombination Process ◽  
Electrical Conduction Mechanism ◽  
Carrier Recombination

Luminescence from individual dislocations in II-VI and III-V semiconductors

1991 ◽  
Vol 49 ◽  
pp. 834-835
Author(s):  
J W Steeds
Keyword(s):  
Group Iv ◽  
Luminescence Properties ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Wide Range ◽  
Basic Physics ◽  
Semiconducting Compounds ◽  
Diamond Group ◽  
Non Destructive ◽  
Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

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