Role of surrounding oxygen on oxide nanowire growth

2010 ◽  
Vol 97 (7) ◽  
pp. 073114 ◽  
Author(s):  
Annop Klamchuen ◽  
Takeshi Yanagida ◽  
Masaki Kanai ◽  
Kazuki Nagashima ◽  
Keisuke Oka ◽  
...  
Keyword(s):  
Nano Research ◽  
2016 ◽  
Vol 9 (5) ◽  
pp. 1334-1345 ◽  
Author(s):  
Li-Bo Mao ◽  
Lei Xue ◽  
Denis Gebauer ◽  
Lei Liu ◽  
Xiao-Fang Yu ◽  
...  

2009 ◽  
Vol 80 (20) ◽  
Author(s):  
V. G. Dubrovskii ◽  
N. V. Sibirev ◽  
G. E. Cirlin ◽  
A. D. Bouravleuv ◽  
Yu. B. Samsonenko ◽  
...  

Langmuir ◽  
2011 ◽  
Vol 27 (7) ◽  
pp. 3672-3677 ◽  
Author(s):  
Kevin M. McPeak ◽  
Thinh P. Le ◽  
Nathan G. Britton ◽  
Zhorro S. Nickolov ◽  
Yossef A. Elabd ◽  
...  

Nano Letters ◽  
2011 ◽  
Vol 11 (3) ◽  
pp. 1259-1264 ◽  
Author(s):  
Rienk E. Algra ◽  
Marcel A. Verheijen ◽  
Lou-Fé Feiner ◽  
George G. W. Immink ◽  
Willem J. P. van Enckevort ◽  
...  

2015 ◽  
Vol 1751 ◽  
Author(s):  
Subhajit Biswas ◽  
Colm O’Regan ◽  
Michael A. Morris ◽  
Justin D. Holmes

ABSTRACTThis article describes feasible and improved ways towards enhanced nanowire growth kinetics by reducing the equilibrium solute concentration in the liquid collector phase in a vapor-liquid-solid (VLS) like growth model. Use of bi-metallic alloy seeds (AuxAg1-x) influences the germanium supersaturation for a faster nucleation and growth kinetics. Nanowire growth with ternary eutectic alloys shows Gibbs-Thompson effect with diameter dependent growth rate. In-situ transmission electron microscopy (TEM) annealing experiments directly confirms the role of equilibrium concentration in nanowire growth kinetics and was used to correlate the equilibrium content of metastable alloys with the growth kinetics of Ge nanowires. The shape and geometry of the heterogeneous interfaces between the liquid eutectic and solid Ge nanowires were found to vary as a function of nanowire diameter and eutectic alloy composition.


NANO ◽  
2006 ◽  
Vol 01 (02) ◽  
pp. 159-165 ◽  
Author(s):  
YOUNGSIK SONG ◽  
JAEWU CHOI

Role of titanium capping layer in synthesis of amorphous silicon nanowires by solid-state reaction was studied by Raman spectroscopy, energy dispersive spectroscopy, scanning electron microscopy and transmission electron microscopy. Silicon nanowires were not grown from 20nm thick nickel film on silicon (100) but grown from 20nm thick nickel film on silicon (100) with 100 nm thick titanium capping layer. The study shows that titanium capping layer plays an important role in formation of Ni–Ti–Si ternary alloy, which acts as a nucleation seed and a promoter for silicon nanowire growth.


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