Effect of junction and band‐gap grading on the electrical performance of molecular beam epitaxial grown AlGaAs/GaAs/AlGaAs double‐heterojunction bipolar transistors

1991 ◽  
Vol 69 (2) ◽  
pp. 1067-1070 ◽  
Author(s):  
S. Noor Mohammad ◽  
J. Chen ◽  
J.‐I. Chyi ◽  
H. Morkoç
Keyword(s):  
Band Gap ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Electrical Performance ◽  
Molecular Beam Epitaxial ◽  
Double Heterojunction

Molecular beam epitaxial double heterojunction bipolar transistors with high current gains

1983 ◽  
Vol 19 (4) ◽  
pp. 128 ◽  
Author(s):  
S.L. Su ◽  
W.G. Lyons ◽  
O. Tejayadi ◽  
R. Fischer ◽  
W. Kopp ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
High Current ◽  
Molecular Beam Epitaxial ◽  
Double Heterojunction

Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy

2000 ◽  
Vol 77 (6) ◽  
pp. 869-871 ◽  
Author(s):  
H. Q. Zheng ◽  
K. Radhakrishnan ◽  
H. Wang ◽  
K. H. Yuan ◽  
S. F. Yoon ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Double Heterojunction
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