InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

1996 ◽  
Vol 14 (3) ◽  
pp. 2225 ◽  
Author(s):  
T. P. Chin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Double Heterojunction

Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy

2000 ◽  
Vol 77 (6) ◽  
pp. 869-871 ◽  
Author(s):  
H. Q. Zheng ◽  
K. Radhakrishnan ◽  
H. Wang ◽  
K. H. Yuan ◽  
S. F. Yoon ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Double Heterojunction

InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE

1992 ◽  
Vol 282 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk ◽  
R. Esagui
Keyword(s):  
Molecular Beam Epitaxy ◽  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Carbon Doped ◽  
Gas Source ◽  
High Injection ◽  
Heterojunction Devices ◽  
Double Heterojunction ◽  
Metal Organic

Carbon-doped base InGaP/GaAs single and double heterojunction bipolar transistors (HBTs) grown by gas-source Metal Organic Molecular Beam Epitaxy (MOMBE) are reported. Large are devices (emitter diameter 70 μm) exhibited gain of 25 for high injection levels at a base doping of 5 × 1019 cm−3. Ideality factors (<1.1)were obtained for both emitter-base and base-collector junctions in both single (SHBT) and double PHBT) heterojunction devices. Vceo's of 12 V and 19 V for SHBTs and DHBTs respectively were measured.

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