Determination of the valence band offset of MOVPE-grownIn0.48Ga0.52P∕GaAsmultiple quantum wells by admittance spectroscopy

2008 ◽  
Vol 77 (12) ◽  
Author(s):  
Carlo Ghezzi ◽  
Renato Magnanini ◽  
Antonella Parisini ◽  
Luciano Tarricone ◽  
Enos Gombia ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Admittance Spectroscopy ◽  
Valence Band Offset

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Photoreflectance Spectroscopy

High valence‐band offset of GaSbAs‐InAlAs quantum wells grown by molecular beam epitaxy

1992 ◽  
Vol 61 (19) ◽  
pp. 2317-2319 ◽  
Author(s):  
P. W. Yu ◽  
D. C. Reynolds ◽  
B. Jogai ◽  
J. Loehr ◽  
C. E. Stutz
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Valence Band ◽  
Molecular Beam ◽  
Band Offset ◽  
Valence Band Offset ◽  
High Valence Band

Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset

2010 ◽  
Author(s):  
Keun-Yong Ban ◽  
Darius Kuciauskas ◽  
Stephen P. Bremnerand ◽  
Christiana B. Honsberg
Keyword(s):  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset

Determination of the valence-band offset for GaInAsSb/InP heterostructure

1999 ◽  
Vol 74 (5) ◽  
pp. 717-719 ◽  
Author(s):  
J. R. Chang ◽  
Y. K. Su ◽  
Y. T. Lu ◽  
D. H. Jaw ◽  
H. P. Shiao ◽  
...  
Keyword(s):  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset

INSIGHTS ON THE BOUND STATES IN THE STRAINED CdSe–ZnSe SINGLE-QUANTUM WELLS

2008 ◽  
Vol 22 (13) ◽  
pp. 2055-2069 ◽  
Author(s):  
NACIR TIT ◽  
IHAB M. OBAIDAT
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Quantum Confinement ◽  
Bound States ◽  
Axial Strain ◽  
Bound State ◽  
Band Offset ◽  
Single Quantum ◽  
Valence Band Offset ◽  
Single Quantum Well

The bound states in the (CdSe) Nw– ZnSe (001) single quantum well are investigated versus the well width (Nw monolayers) and the valence-band offset (VBO). The calculation, based on the sp3s* tight-binding method which includes the spin-orbit interactions, is employed to calculate the band-gap energy (Eg), quantum-confinement energy (EQ), and band structures. It is found that the studied systems possess a vanishing valence-band offset ( VBO ≃ 0) in consistency with the common-anion rule, and a large conduction band offset of about ( CBO ≃ 1 eV ); both of which made the electronic confinement become predominant. The bi-axial strain, on the other hand, remains to control the hole states. Namely, the two highest (spin-degenerate) hole states are found to localize at the two interfaces due to the formation of two similar strain-induced potential dips at these interfaces, each of depth equal to the strain energy ~35 meV. More importantly, the ultrathin CdSe wells (with Nw ≤ 4 monolayers) are found to contain only a single (spin-degenerate) bound state; but by increasing the well width further, a new (spin-degenerate) bound state falls into the well every time Nw hits a multiple of 4 monolayers (more specifically, for 4n+1 ≤ Nw ≤ 4 (n+1), the number of bound states is (n+1), where n is an integer). The rule governing the variation of the quantum-confinement energy EQ versus the well width Nw has been derived. Our theoretical results are in excellent agreement with the available experimental photoluminescence data.

Large valence-band offset in strained-layerInxGa1−xAs-GaAs quantum wells

1987 ◽  
Vol 36 (15) ◽  
pp. 8165-8168 ◽  
Author(s):  
J. Menéndez ◽  
A. Pinczuk ◽  
D. J. Werder ◽  
S. K. Sputz ◽  
R. C. Miller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset

Far-infrared determination of effective mass and valence-band offset in the HgTe/CdTe superlattice

1989 ◽  
Vol 40 (8) ◽  
pp. 5613-5616 ◽  
Author(s):  
S. Perkowitz ◽  
B. Lou ◽  
L. S. Kim ◽  
O. K. Wu ◽  
J. N. Schulman
Keyword(s):  
Effective Mass ◽  
Valence Band ◽  
Far Infrared ◽  
Band Offset ◽  
Valence Band Offset
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