scholarly journals The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

2010 ◽  
Vol 97 (4) ◽  
pp. 042903 ◽  
Author(s):  
H. D. Trinh ◽  
E. Y. Chang ◽  
P. W. Wu ◽  
Y. Y. Wong ◽  
C. T. Chang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Surface Treatment ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Annealing Conditions ◽  
Layer Deposition ◽  
Metal Oxide Semiconductor Capacitor

Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications

2009 ◽  
Vol 106 (11) ◽  
pp. 114107 ◽  
Author(s):  
D. Hoogeland ◽  
K. B. Jinesh ◽  
F. Roozeboom ◽  
W. F. A. Besling ◽  
M. C. M. van de Sanden ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Layer Deposition ◽  
Metal Oxide Semiconductor Capacitor

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

2010 ◽  
Vol 107 (10) ◽  
pp. 106104 ◽  
Author(s):  
D. Gregušová ◽  
R. Stoklas ◽  
Ch. Mizue ◽  
Y. Hori ◽  
J. Novák ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trap States ◽  
Semiconductor Structures ◽  
Layer Deposition
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