Soft-solution route to ZnO nanowall array with low threshold power density

2010 ◽  
Vol 97 (4) ◽  
pp. 043109 ◽  
Author(s):  
Eue-Soon Jang ◽  
Xiaoyuan Chen ◽  
Jung-Hee Won ◽  
Jae-Hun Chung ◽  
Du-Jeon Jang ◽  
...  
Keyword(s):  
Power Density ◽  
Threshold Power ◽  
Low Threshold ◽  
Solution Route

The sensitization of laser-induced heat of Er3+ doped Y2O3 nanocrystals by codoped with Mn2+

2015 ◽  
Vol 29 (22) ◽  
pp. 1550158
Author(s):  
Yunfeng Bai ◽  
Minjie Luan ◽  
Linjun Li ◽  
Zhelong He ◽  
Dongyu Li
Keyword(s):  
Power Density ◽  
Thermal Emission ◽  
Energy Levels ◽  
Excitation Power ◽  
Threshold Power ◽  
Excitation Power Density ◽  
Ir Laser ◽  
Order Of Magnitude ◽  
Low Threshold ◽  
Density Threshold

Low threshold power density cw laser-induced heat has been observed in [Formula: see text] and [Formula: see text] codoped [Formula: see text] nanocrystals under excitation by a 980 nm IR laser. Codoped [Formula: see text] remarkably reduces the power density threshold of laser-induced heat compared with [Formula: see text] doped [Formula: see text] nanocrystals. When the excitation power density exceed [Formula: see text], [Formula: see text] codoped [Formula: see text] nanocrystals emit strong blackbody radiation. The thermal emission of [Formula: see text] should originate from the multiphonon relaxation between neighboring energy levels. One additional UC-PL enhancement is observed. The UC-PL intensity can be enhanced by an order of magnitude through high temperature calcination caused by light into heat.

scholarly journals Low threshold power density for the generation of frequency up-converted pulses in bismuth glass by two crossing chirped femtosecond pulses

2011 ◽  
Vol 19 (13) ◽  
pp. 12039 ◽  
Author(s):  
Hang Zhang ◽  
Hui Liu ◽  
Jinhai Si ◽  
Wenhui Yi ◽  
Feng Chen ◽  
...  
Keyword(s):  
Power Density ◽  
Threshold Power ◽  
Femtosecond Pulses ◽  
Low Threshold

CW Argon-ion laser initiated aluminum induced crystallization of amorphous silicon thin films

2004 ◽  
Vol 808 ◽  
Author(s):  
Sampath K. Paduru ◽  
Husam H. Abu-safe ◽  
Hameed A. Naseem ◽  
Adnan Al-Shariah ◽  
William D. Brown
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Power Density ◽  
Threshold Power ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Power Densities ◽  
Argon Ion ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

ABSTRACTCW Argon-ion laser initiated aluminum induced crystallization (AIC) of RF magnetron sputtered amorphous silicon (a-Si) thin films has been investigated. It was found that lasers could be effectively used to initiate AIC process at very low threshold power densities. An argon-ion laser (λ=514.5 nm) was used to anneal Al/a-Si/glass structures with varying power densities ranging between 55 and 125 W/cm2 and exposure times ranging from 10 to 120 s. X-ray diffraction analysis showed the resulting films to be polycrystalline. The crystallization rate increased both with power density and exposure time. Environmental scanning electron microscopy (ESEM) analysis showed that the surface features change with increasing power density and irradiation time. A dendritic growth pattern was observed in the initial stages of interaction between the films. A strong crystalline Raman peak at around 520 cm-1 was observed in the Raman spectra of the crystallized samples.

scholarly journals Ultra-low threshold lasing through phase front engineering via a metallic circular aperture

2022 ◽  
Vol 13 (1) ◽  
Author(s):  
Zhixin Wang ◽  
Filippos Kapsalidis ◽  
Ruijun Wang ◽  
Mattias Beck ◽  
Jérôme Faist
Keyword(s):  
Semiconductor Lasers ◽  
Continuous Wave ◽  
Threshold Power ◽  
Circular Aperture ◽  
Phase Front ◽  
Reflective Coating ◽  
Low Threshold ◽  
Ridge Lasers ◽  
Reflective Coatings ◽  
Electrical Consumption

AbstractSemiconductor lasers with extremely low threshold power require a combination of small volume active region with high-quality-factor cavities. For ridge lasers with highly reflective coatings, an ultra-low threshold demands significantly suppressing the diffraction loss at the facets of the laser. Here, we demonstrate that introducing a subwavelength aperture in the metallic highly reflective coating of a laser can correct the phase front, thereby counter-intuitively enhancing both its modal reflectivity and transmissivity at the same time. Theoretical and experimental results manifest a decreasing in the mirror loss by over 40% and an increasing in the transmissivity by 104. Implementing this method on a small-cavity quantum cascade laser, room-temperature continuous-wave lasing operation at 4.5 μm wavelength with an electrical consumption power of only 143 mW is achieved. Our work suggests possibilities for future portable applications and can be implemented in a broad range of optoelectronic systems.

Threshold power density for photodecomposition of nitrocellulose

1989 ◽  
Vol 54 (17) ◽  
pp. 1662-1663
Author(s):  
Yutang Ye ◽  
Robert G. Hunsperger
Keyword(s):  
Power Density ◽  
Threshold Power
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