Threshold power density for photodecomposition of nitrocellulose

1989 ◽  
Vol 54 (17) ◽  
pp. 1662-1663
Author(s):  
Yutang Ye ◽  
Robert G. Hunsperger
Keyword(s):  
Power Density ◽  
Threshold Power

The sensitization of laser-induced heat of Er3+ doped Y2O3 nanocrystals by codoped with Mn2+

2015 ◽  
Vol 29 (22) ◽  
pp. 1550158
Author(s):  
Yunfeng Bai ◽  
Minjie Luan ◽  
Linjun Li ◽  
Zhelong He ◽  
Dongyu Li
Keyword(s):  
Power Density ◽  
Thermal Emission ◽  
Energy Levels ◽  
Excitation Power ◽  
Threshold Power ◽  
Excitation Power Density ◽  
Ir Laser ◽  
Order Of Magnitude ◽  
Low Threshold ◽  
Density Threshold

Low threshold power density cw laser-induced heat has been observed in [Formula: see text] and [Formula: see text] codoped [Formula: see text] nanocrystals under excitation by a 980 nm IR laser. Codoped [Formula: see text] remarkably reduces the power density threshold of laser-induced heat compared with [Formula: see text] doped [Formula: see text] nanocrystals. When the excitation power density exceed [Formula: see text], [Formula: see text] codoped [Formula: see text] nanocrystals emit strong blackbody radiation. The thermal emission of [Formula: see text] should originate from the multiphonon relaxation between neighboring energy levels. One additional UC-PL enhancement is observed. The UC-PL intensity can be enhanced by an order of magnitude through high temperature calcination caused by light into heat.

CW Argon-ion laser initiated aluminum induced crystallization of amorphous silicon thin films

2004 ◽  
Vol 808 ◽  
Author(s):  
Sampath K. Paduru ◽  
Husam H. Abu-safe ◽  
Hameed A. Naseem ◽  
Adnan Al-Shariah ◽  
William D. Brown
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Power Density ◽  
Threshold Power ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Power Densities ◽  
Argon Ion ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

ABSTRACTCW Argon-ion laser initiated aluminum induced crystallization (AIC) of RF magnetron sputtered amorphous silicon (a-Si) thin films has been investigated. It was found that lasers could be effectively used to initiate AIC process at very low threshold power densities. An argon-ion laser (λ=514.5 nm) was used to anneal Al/a-Si/glass structures with varying power densities ranging between 55 and 125 W/cm2 and exposure times ranging from 10 to 120 s. X-ray diffraction analysis showed the resulting films to be polycrystalline. The crystallization rate increased both with power density and exposure time. Environmental scanning electron microscopy (ESEM) analysis showed that the surface features change with increasing power density and irradiation time. A dendritic growth pattern was observed in the initial stages of interaction between the films. A strong crystalline Raman peak at around 520 cm-1 was observed in the Raman spectra of the crystallized samples.

Soft-solution route to ZnO nanowall array with low threshold power density

2010 ◽  
Vol 97 (4) ◽  
pp. 043109 ◽  
Author(s):  
Eue-Soon Jang ◽  
Xiaoyuan Chen ◽  
Jung-Hee Won ◽  
Jae-Hun Chung ◽  
Du-Jeon Jang ◽  
...  
Keyword(s):  
Power Density ◽  
Threshold Power ◽  
Low Threshold ◽  
Solution Route

EFFECT OF THE DENSITY OF SURFACE V-DEFECTS ON LASER PROPERTIES OF InGaN/GaN HETEROSCTRUCTURES WITH MULTIPLE QUANTUM WELLS GROWN ON SILICON SUBSTRATES

2021 ◽  
Vol 88 (6) ◽  
pp. 895-899
Author(s):  
A. V. Danilchyk ◽  
A. V. Nagornyi ◽  
N. V. Rzheutskyi ◽  
A. G. Voinilovich ◽  
V. N. Pavlovskyi ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Quantum Wells ◽  
Power Density ◽  
Optical Excitation ◽  
Radiative Properties ◽  
Multiple Quantum Wells ◽  
Threshold Power ◽  
Silicon Substrates ◽  
Multiple Quantum ◽  
Coating Layers

We investigated the radiative properties of InGaN/GaN heterostructures with multiple quantum wells (MQWs) grown on silicon substrates with different thicknesses of quantum wells at optical excitation. The correlation of laser and photoluminescent properties with the surface morphology of the gallium nitride coating layers and the density of V-defects has been established. It is shown that, with a growth in the density of V-defects, the threshold power density of the excitation of the generation of InGaN/GaN heterostructures with MQWs increases.

OPTICAL BISTABILITY SWITCHING PROPERTY IN ONE-DIMENSIONAL NONLINEAR PHOTONIC CRYSTAL

2005 ◽  
Vol 14 (01) ◽  
pp. 41-48 ◽  
Author(s):  
MING CHEN ◽  
CHUNFEI LI ◽  
SHAOJIE MA ◽  
MAI XU ◽  
WEIBIAO WANG ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Power Density ◽  
Optical Bistability ◽  
Optical Switch ◽  
Threshold Power ◽  
One Dimensional ◽  
Nonlinear Photonic Crystal ◽  
Incident Power Density ◽  
Ion Laser ◽  
The One

Optical bistability device based on nonlinear one-dimensional photonic crystals is designed and manufactured. The device has 20 periods and is made from ZnS and ZnSe layers alternately. When the incident power density reach threshold power density 1.0 × 105 W/cm2, the Ar ion laser, whose wavelength is 514.5 nm, is shifted out of the optical band gap of the one-dimensional nonlinear photonic crystals, so an optical switch is made. It also can be made into an optical bistability device. The threshold power density of the optical bistability is 1.38 × 105 W/cm2 and its switching time is about 100 ps in experiment. The experimental results are in good accordance with the theoretical ones.

scholarly journals Threshold Power Density Required for Machining and Material Properties

1971 ◽  
Vol 37 (439) ◽  
pp. 578-584
Author(s):  
Satoshi NAKAYAMA ◽  
Yasunao SAITO ◽  
Kiichi TAKAMOTO
Keyword(s):  
Power Density ◽  
Material Properties ◽  
Threshold Power
Sign in / Sign up

Export Citation Format

Share Document