A study of deep‐level defects in metalorganic vapor‐phase‐epitaxy‐grown ZnSe on GaAs by deep‐level transient spectroscopy

Y. H. Wang; S. S. Li

doi:10.1063/1.346476

A study of deep‐level defects in metalorganic vapor‐phase‐epitaxy‐grown ZnSe on GaAs by deep‐level transient spectroscopy

Journal of Applied Physics ◽

10.1063/1.346476 ◽

1990 ◽

Vol 68 (5) ◽

pp. 2535-2537 ◽

Cited By ~ 3

Author(s):

Y. H. Wang ◽

S. S. Li

Keyword(s):

Vapor Phase ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Transient Spectroscopy

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Deep-Level Transient Spectroscopy of Nitrogen-Doped ZnSe Grown by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l827 ◽

1995 ◽

Vol 34 (Part 2, No. 7A) ◽

pp. L827-L829 ◽

Cited By ~ 17

Author(s):

Hideo Goto ◽

Tsutomu Tanoi ◽

Masaaki Takemura ◽

Toshiyuki Ido

Keyword(s):

Vapor Phase ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Nitrogen Doped ◽

Transient Spectroscopy

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Deep level transient spectroscopy assessment of silicon contamination in AlGaAs layers grown by metalorganic vapor phase epitaxy

Journal of Electronic Materials ◽

10.1007/bf02652976 ◽

1995 ◽

Vol 24 (8) ◽

pp. 1017-1022 ◽

Cited By ~ 3

Author(s):

E. Calleja ◽

F. Sanchez ◽

E. Muñoz ◽

P. Gibart ◽

A. Powell ◽

...

Keyword(s):

Vapor Phase ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Transient Spectroscopy ◽

Silicon Contamination

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Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy

Applied Physics Letters ◽

10.1063/1.5098965 ◽

2019 ◽

Vol 115 (1) ◽

pp. 012103 ◽

Cited By ~ 12

Author(s):

Kazutaka Kanegae ◽

Hajime Fujikura ◽

Yohei Otoki ◽

Taichiro Konno ◽

Takehiro Yoshida ◽

...

Keyword(s):

Vapor Phase ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Vapor Phase Epitaxy ◽

Hydride Vapor Phase Epitaxy ◽

Transient Spectroscopy ◽

Spectroscopy Studies ◽

Homoepitaxial Layers ◽

Electron And Hole Traps

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Deep levels in n-type AlGaN grown by hydride vapor-phase epitaxy on sapphire characterized by deep-level transient spectroscopy

Applied Physics Letters ◽

10.1063/1.2137901 ◽

2005 ◽

Vol 87 (22) ◽

pp. 222112 ◽

Cited By ~ 33

Author(s):

J. Osaka ◽

Y. Ohno ◽

S. Kishimoto ◽

K. Maezawa ◽

T. Mizutani

Keyword(s):

Vapor Phase ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Vapor Phase Epitaxy ◽

Deep Levels ◽

Hydride Vapor Phase Epitaxy ◽

Transient Spectroscopy

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Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates

Physica B Condensed Matter ◽

10.1016/j.physb.2009.08.237 ◽

2009 ◽

Vol 404 (23-24) ◽

pp. 4889-4891 ◽

Cited By ~ 13

Author(s):

E. PŁaczek-Popko ◽

J. Trzmiel ◽

E. Zielony ◽

S. Grzanka ◽

R. Czernecki ◽

...

Keyword(s):

Vapor Phase ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Vapor Phase Epitaxy ◽

Organic Vapor ◽

Metal Organic ◽

Transient Spectroscopy

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Cubic GaN Films on GaAs (001) Substrates without Deep-Level Luminescence Grown by Metalorganic Vapor Phase Epitaxy

phys stat sol (a) ◽

10.1002/1521-396x(200007)180:1<15::aid-pssa15>3.0.co;2-b ◽

2000 ◽

Vol 180 (1) ◽

pp. 15-19 ◽

Cited By ~ 4

Author(s):

K. Onabe ◽

J. Wu ◽

R. Katayama ◽

F.H. Zhao ◽

A. Nagayama ◽

...

Keyword(s):

Vapor Phase ◽

Deep Level ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Cubic Gan

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Deep‐level transient spectroscopy studies of Ni‐ and Zn‐diffused vapor‐phase‐epitaxyn‐GaAs

Journal of Applied Physics ◽

10.1063/1.325884 ◽

1979 ◽

Vol 50 (11) ◽

pp. 6845-6859 ◽

Cited By ~ 50

Author(s):

D. L. Partin ◽

J. W. Chen ◽

A. G. Milnes ◽

L. F. Vassamillet

Keyword(s):

Vapor Phase ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Transient Spectroscopy ◽

Spectroscopy Studies

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Deep Level Defects in GaN Grown at Low Temperature by Metalorganic Vapor Phase Epitaxy

Proceedings of the 2nd Annual International Conference on Material, Machines and Methods for Sustainable Development (MMMS2020) - Lecture Notes in Mechanical Engineering ◽

10.1007/978-3-030-69610-8_34 ◽

2021 ◽

pp. 246-251

Author(s):

Nguyen Hoang Thoan ◽

Nguyen Trung Do ◽

Tran Thien Duc ◽

Nguyen Ngoc Trung

Keyword(s):

Low Temperature ◽

Vapor Phase ◽

Deep Level ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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Defect States In p-ZnSe:N Grown By MOVPE

MRS Proceedings ◽

10.1557/proc-442-561 ◽

1996 ◽

Vol 442 ◽

Author(s):

Shizuo Fujita ◽

Ken-Ichi Ogata ◽

Daisuke Kawaguchi ◽

Zhi Gang Peng ◽

Shigeo Fujita

Keyword(s):

Vapor Phase ◽

Deep Level Transient Spectroscopy ◽

Annealing Temperature ◽

Deep Level ◽

Defect States ◽

Nitrogen Doped ◽

Activation Efficiency ◽

Transient Spectroscopy ◽

P Type

AbstractConcentration and origin of defect states in p-type nitrogen-doped ZnSe (p-ZnSe:N) grown by metalorganic vapor-phase epitaxy (MOVPE) are discussed by means of timeresolved photoluminescence and deep level transient spectroscopy. Thermal annealing, which is a useful tool for realizing p-type conductivity, results in deep defect states which seem to be associated with Zn vacancies and with nitrogen acceptors. By lowering the annealing temperature, the trap concentrations can be successfully reduced without seriously sacrificing the acceptor activation efficiency, although further reduction of Zn vacancies is pointed out as a remaining requirement for the improvement of quality of MOVPE-grown p-type layers.

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