Spin-injection device prospects for half-metallic Fe3O4:Al0.1Ga0.9As interfaces

2010 ◽  
Vol 108 (3) ◽  
pp. 034507 ◽  
Author(s):  
R. Mansell ◽  
J.-B. Laloë ◽  
S. N. Holmes ◽  
P. K. J. Wong ◽  
Y. B. Xu ◽  
...  
Keyword(s):  
Spin Injection ◽  
Injection Device ◽  
Half Metallic

scholarly journals Coherent manipulation of nuclear spins using spin injection from a half-metallic spin source

2015 ◽  
Vol 91 (14) ◽  
Author(s):  
Tetsuya Uemura ◽  
Takafumi Akiho ◽  
Yuya Ebina ◽  
Masafumi Yamamoto
Keyword(s):  
Spin Injection ◽  
Nuclear Spins ◽  
Half Metallic ◽  
Coherent Manipulation

scholarly journals Development of a spin-injection device utilising Gadolinium Nitride

2021 ◽  
Author(s):  
◽  
Kira Pitman
Keyword(s):  
Spin Injection ◽  
Spin Current ◽  
Ferromagnetic Semiconductor ◽  
Experimental Setup ◽  
Injection Device ◽  
Optimal Method ◽  
Multiple Measurement ◽  
Gadolinium Nitride ◽  
Testing Resistance ◽  
Semiconductor Electrodes

<p>In this thesis, the first steps in creating a realisable spin-injection transistor using ferromagnetic semiconductor electrodes are detailed. A spin-injection device utilising the ferromagnetic semiconductor gadolinium nitride has been designed, fabricated and electrically tested. In addition, an experimental setup for future measurements of a spin current in spin-injection devices was adapted to our laboratory-based off one developed by the Shiraishi group at Kyoto University. Issues encountered during fabrication were identified, and an optimal method for fabricating these devices was determined. Gadolinium nitride and copper were used to make the devices on Si/SiO2 substrates.  The electrical integrity and applicability of the devices for future measurements of injected spin-current was determined through electrical device testing. Resistance measurements of electrical pathways within the device were undertaken to determine the successful deposition of the gadolinium nitride and copper. IV measurements to determine if the devices could withstand the current required for spin current measurements were done. The durability of the devices through multiple measurement types was observed. It was determined that although spin-injection devices utilising gadolinium nitride can be successfully fabricated, more work needs to be done to ensure that the electrical pathways through the copper and gadolinium nitride can be consistently reproducible to allow spin-injection measurements to be done.</p>

Magnetotransport Properties in a Lateral Spin-Injection Device with a Ferromagnetic/Si/ Ferromagnetic Junction

2004 ◽  
Vol 449-452 ◽  
pp. 1081-1084
Author(s):  
Woong Joon Hwang ◽  
H.J. Lee ◽  
K.I. Lee ◽  
J.M. Lee ◽  
J.Y. Chang ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Spin Transport ◽  
Spin Injection ◽  
The Other ◽  
Injection Device ◽  
Polarized Electrons ◽  
Spin Polarized ◽  
First Contact

The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 – 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

scholarly journals Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin-injection device

2010 ◽  
Vol 81 (20) ◽  
Author(s):  
G. Salis ◽  
A. Fuhrer ◽  
R. R. Schlittler ◽  
L. Gross ◽  
S. F. Alvarado
Keyword(s):  
Temperature Dependence ◽  
Spin Injection ◽  
Injection Device ◽  
Electrical Spin

Spin transport in a lateral spin-injection device with an FM/Si/FM junction

2004 ◽  
Vol 272-276 ◽  
pp. 1915-1916 ◽  
Author(s):  
W.J. Hwang ◽  
H.J. Lee ◽  
K.I. Lee ◽  
Y.M. Kim ◽  
J.Y. Chang ◽  
...  
Keyword(s):  
Spin Transport ◽  
Spin Injection ◽  
Injection Device

scholarly journals Spin-injection device based on EuS magnetic tunnel barriers

2002 ◽  
Vol 81 (10) ◽  
pp. 1815-1817 ◽  
Author(s):  
A. T. Filip ◽  
P. LeClair ◽  
C. J. P. Smits ◽  
J. T. Kohlhepp ◽  
H. J. M. Swagten ◽  
...  
Keyword(s):  
Spin Injection ◽  
Injection Device ◽  
Tunnel Barriers

Enhancing spin injection efficiency through half-metallic miniband conduction in a spin-filter superlattice

2016 ◽  
Vol 28 (5) ◽  
pp. 056003 ◽  
Author(s):  
Yi-Hang Yang ◽  
Lin Li ◽  
Fen Liu ◽  
Zhi-Wei Gao ◽  
Guo-Xing Miao
Keyword(s):  
Spin Injection ◽  
Spin Filter ◽  
Injection Efficiency ◽  
Half Metallic

Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions

2011 ◽  
Vol 470 ◽  
pp. 54-59
Author(s):  
Hiroyoshi Itoh ◽  
Syuta Honda ◽  
Junichiro Inoue
Keyword(s):  
Electronic Structure ◽  
Heusler Alloy ◽  
Spin Injection ◽  
Magnetic Moments ◽  
Heusler Alloys ◽  
Growth Direction ◽  
Layer By Layer ◽  
Half Metallicity ◽  
Half Metallic ◽  
Layer Stacking

The electronic structures of Co-based Heusler alloys with nonstoichiometric atomic compositions as well as those at the interface of semiconductor junctions are investigated using first principles band calculations. It is shown that the electronic structure of a Co-based Heusler alloy is half-metallic, even for nonstoichiometric but Co-rich compositions, whereas the half-metallicity is lost for Co-poor compositions. It is also shown that magnetic moments at the interface of Co2MnSi/ Si junctions are sensitive to the growth direction and interface structure of the junctions. Efficient spin-injection into Si can be achieved by using a (111)-oriented Co-rich Heusler alloy and controlling the layer-by-layer stacking sequence at the interface.

Magnetization reversal and magnetoresistance in a lateral spin-injection device

1999 ◽  
Vol 85 (9) ◽  
pp. 6682-6685 ◽  
Author(s):  
W. Y. Lee ◽  
S. Gardelis ◽  
B.-C. Choi ◽  
Y. B. Xu ◽  
C. G. Smith ◽  
...  
Keyword(s):  
Magnetization Reversal ◽  
Spin Injection ◽  
Injection Device
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