scholarly journals Spin-injection device based on EuS magnetic tunnel barriers

2002 ◽  
Vol 81 (10) ◽  
pp. 1815-1817 ◽  
Author(s):  
A. T. Filip ◽  
P. LeClair ◽  
C. J. P. Smits ◽  
J. T. Kohlhepp ◽  
H. J. M. Swagten ◽  
...  
Keyword(s):  
Spin Injection ◽  
Injection Device ◽  
Tunnel Barriers

scholarly journals Development of a spin-injection device utilising Gadolinium Nitride

2021 ◽  
Author(s):  
◽  
Kira Pitman
Keyword(s):  
Spin Injection ◽  
Spin Current ◽  
Ferromagnetic Semiconductor ◽  
Experimental Setup ◽  
Injection Device ◽  
Optimal Method ◽  
Multiple Measurement ◽  
Gadolinium Nitride ◽  
Testing Resistance ◽  
Semiconductor Electrodes

<p>In this thesis, the first steps in creating a realisable spin-injection transistor using ferromagnetic semiconductor electrodes are detailed. A spin-injection device utilising the ferromagnetic semiconductor gadolinium nitride has been designed, fabricated and electrically tested. In addition, an experimental setup for future measurements of a spin current in spin-injection devices was adapted to our laboratory-based off one developed by the Shiraishi group at Kyoto University. Issues encountered during fabrication were identified, and an optimal method for fabricating these devices was determined. Gadolinium nitride and copper were used to make the devices on Si/SiO2 substrates.  The electrical integrity and applicability of the devices for future measurements of injected spin-current was determined through electrical device testing. Resistance measurements of electrical pathways within the device were undertaken to determine the successful deposition of the gadolinium nitride and copper. IV measurements to determine if the devices could withstand the current required for spin current measurements were done. The durability of the devices through multiple measurement types was observed. It was determined that although spin-injection devices utilising gadolinium nitride can be successfully fabricated, more work needs to be done to ensure that the electrical pathways through the copper and gadolinium nitride can be consistently reproducible to allow spin-injection measurements to be done.</p>

Magnetotransport Properties in a Lateral Spin-Injection Device with a Ferromagnetic/Si/ Ferromagnetic Junction

2004 ◽  
Vol 449-452 ◽  
pp. 1081-1084
Author(s):  
Woong Joon Hwang ◽  
H.J. Lee ◽  
K.I. Lee ◽  
J.M. Lee ◽  
J.Y. Chang ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Spin Transport ◽  
Spin Injection ◽  
The Other ◽  
Injection Device ◽  
Polarized Electrons ◽  
Spin Polarized ◽  
First Contact

The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 – 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.

scholarly journals Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin-injection device

2010 ◽  
Vol 81 (20) ◽  
Author(s):  
G. Salis ◽  
A. Fuhrer ◽  
R. R. Schlittler ◽  
L. Gross ◽  
S. F. Alvarado
Keyword(s):  
Temperature Dependence ◽  
Spin Injection ◽  
Injection Device ◽  
Electrical Spin

Spin transport in a lateral spin-injection device with an FM/Si/FM junction

2004 ◽  
Vol 272-276 ◽  
pp. 1915-1916 ◽  
Author(s):  
W.J. Hwang ◽  
H.J. Lee ◽  
K.I. Lee ◽  
Y.M. Kim ◽  
J.Y. Chang ◽  
...  
Keyword(s):  
Spin Transport ◽  
Spin Injection ◽  
Injection Device

scholarly journals Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering

2012 ◽  
Vol 2012 ◽  
pp. 1-13 ◽  
Author(s):  
S. P. Dash ◽  
D. Goll ◽  
P. Kopold ◽  
H. D. Carstanjen
Keyword(s):  
High Resolution ◽  
Room Temperature ◽  
Spin Injection ◽  
Schottky Contact ◽  
Tunnel Barrier ◽  
Si Substrate ◽  
High Crystalline Quality ◽  
Tunnel Barriers ◽  
Interface Structures

In order to obtain high spin injection efficiency, a ferromagnet-semiconducor Schottky contact must be of high crystalline quality. This is particularly important in the case of ferromagnet-silicon interfaces, since these elements tend to mix and form silicides. In this study Co-Si (100) interfaces were prepared in three different ways: by evaporation at room temperature, low temperature (), and with Sb as surfactant, and their interface structures were analyzed by high-resolution RBS (HRBS). In all cases more or less strong in-diffusion of Co with subsequent silicide formation was observed. In order to prevent the mixing of Co and Si, ultra thin MgO tunnel barriers were introduced in-between them. In situ HRBS characterization confirms that the MgO films were very uniform and prevented the mixing of the Si substrate with deposited Co and Fe films effectively, even at .

Low-resistance spin injection into silicon using graphene tunnel barriers

2012 ◽  
Vol 7 (11) ◽  
pp. 737-742 ◽  
Author(s):  
O. M. J. van 't Erve ◽  
A. L. Friedman ◽  
E. Cobas ◽  
C. H. Li ◽  
J. T. Robinson ◽  
...  
Keyword(s):  
Spin Injection ◽  
Low Resistance ◽  
Tunnel Barriers

Magnetization reversal and magnetoresistance in a lateral spin-injection device

1999 ◽  
Vol 85 (9) ◽  
pp. 6682-6685 ◽  
Author(s):  
W. Y. Lee ◽  
S. Gardelis ◽  
B.-C. Choi ◽  
Y. B. Xu ◽  
C. G. Smith ◽  
...  
Keyword(s):  
Magnetization Reversal ◽  
Spin Injection ◽  
Injection Device

Spin-injection device prospects for half-metallic Fe3O4:Al0.1Ga0.9As interfaces

2010 ◽  
Vol 108 (3) ◽  
pp. 034507 ◽  
Author(s):  
R. Mansell ◽  
J.-B. Laloë ◽  
S. N. Holmes ◽  
P. K. J. Wong ◽  
Y. B. Xu ◽  
...  
Keyword(s):  
Spin Injection ◽  
Injection Device ◽  
Half Metallic

Electrical Spin Injection and Detection in Silicon Nanowires through Oxide Tunnel Barriers

Nano Letters ◽  
2013 ◽  
Vol 13 (2) ◽  
pp. 430-435 ◽  
Author(s):  
Shixiong Zhang ◽  
Shadi A. Dayeh ◽  
Yan Li ◽  
Scott A. Crooker ◽  
Darryl L. Smith ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Spin Injection ◽  
Tunnel Barriers ◽  
Electrical Spin ◽  
Oxide Tunnel ◽  
Spin Injection And Detection
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