Magnetization reversal and magnetoresistance in a lateral spin-injection device

1999 ◽  
Vol 85 (9) ◽  
pp. 6682-6685 ◽  
Author(s):  
W. Y. Lee ◽  
S. Gardelis ◽  
B.-C. Choi ◽  
Y. B. Xu ◽  
C. G. Smith ◽  
...  
2021 ◽  
Author(s):  
◽  
Kira Pitman

<p>In this thesis, the first steps in creating a realisable spin-injection transistor using ferromagnetic semiconductor electrodes are detailed. A spin-injection device utilising the ferromagnetic semiconductor gadolinium nitride has been designed, fabricated and electrically tested. In addition, an experimental setup for future measurements of a spin current in spin-injection devices was adapted to our laboratory-based off one developed by the Shiraishi group at Kyoto University. Issues encountered during fabrication were identified, and an optimal method for fabricating these devices was determined. Gadolinium nitride and copper were used to make the devices on Si/SiO2 substrates.  The electrical integrity and applicability of the devices for future measurements of injected spin-current was determined through electrical device testing. Resistance measurements of electrical pathways within the device were undertaken to determine the successful deposition of the gadolinium nitride and copper. IV measurements to determine if the devices could withstand the current required for spin current measurements were done. The durability of the devices through multiple measurement types was observed. It was determined that although spin-injection devices utilising gadolinium nitride can be successfully fabricated, more work needs to be done to ensure that the electrical pathways through the copper and gadolinium nitride can be consistently reproducible to allow spin-injection measurements to be done.</p>


2004 ◽  
Vol 449-452 ◽  
pp. 1081-1084
Author(s):  
Woong Joon Hwang ◽  
H.J. Lee ◽  
K.I. Lee ◽  
J.M. Lee ◽  
J.Y. Chang ◽  
...  

The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 – 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.


2010 ◽  
Vol 81 (20) ◽  
Author(s):  
G. Salis ◽  
A. Fuhrer ◽  
R. R. Schlittler ◽  
L. Gross ◽  
S. F. Alvarado

2004 ◽  
Vol 272-276 ◽  
pp. 1915-1916 ◽  
Author(s):  
W.J. Hwang ◽  
H.J. Lee ◽  
K.I. Lee ◽  
Y.M. Kim ◽  
J.Y. Chang ◽  
...  

2002 ◽  
Vol 81 (10) ◽  
pp. 1815-1817 ◽  
Author(s):  
A. T. Filip ◽  
P. LeClair ◽  
C. J. P. Smits ◽  
J. T. Kohlhepp ◽  
H. J. M. Swagten ◽  
...  

2004 ◽  
Author(s):  
Roger J. Elliott ◽  
Ernest M. Epshtein ◽  
Yuri V. Gulyaev ◽  
Peter E. Zilberman

2008 ◽  
Vol 77 (17) ◽  
Author(s):  
J.-E. Wegrowe ◽  
S. M. Santos ◽  
M.-C. Ciornei ◽  
H.-J. Drouhin ◽  
J. M. Rubí

2003 ◽  
Author(s):  
Jean-Eric Wegrowe ◽  
T. Wade

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