Mercury annealing of reactive ion etching induced p- to n-type conversion in extrinsically doped p-type HgCdTe

1998 ◽  
Vol 83 (10) ◽  
pp. 5555-5557 ◽  
Author(s):  
E. P. G. Smith ◽  
J. F. Siliquini ◽  
C. A. Musca ◽  
J. Antoszewski ◽  
J. M. Dell ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Type Conversion ◽  
Ion Etching ◽  
P Type

Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped P-Type hgcdte

1997 ◽  
Vol 487 ◽  
Author(s):  
C. A. Musca ◽  
E. P. G. Smith ◽  
J. F. Siliquini ◽  
J. M. Dell ◽  
J. Antoszewski ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Laser Beam ◽  
Reactive Ion Etching ◽  
Epitaxial Layers ◽  
Processing Conditions ◽  
Induced Current ◽  
Type Conversion ◽  
Ion Etching ◽  
Type Layer ◽  
P Type

AbstractMercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.31) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400mT, CH4/H2, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200°C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA-ND=2× 1016 cm−3, μ=350 cm2.V−1.−1).

Characterisation of reactive-ion-etching-induced type-conversion in p-type HgCdTe using scanning laser microscopy

1998 ◽  
Vol 184-185 ◽  
pp. 1219-1222 ◽  
Author(s):  
J.F. Siliquini ◽  
J.M. Dell ◽  
C.A. Musca ◽  
L. Faraone ◽  
J. Piotrowski
Keyword(s):  
Reactive Ion Etching ◽  
Scanning Laser ◽  
Type Conversion ◽  
Ion Etching ◽  
Laser Microscopy ◽  
Scanning Laser Microscopy ◽  
P Type

Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe

1997 ◽  
Vol 484 ◽  
Author(s):  
C. A. Musca ◽  
E. P. G. Smith ◽  
J. F. Siliquini ◽  
J. M. Dell ◽  
J. Antoszewski ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Laser Beam ◽  
Reactive Ion Etching ◽  
Epitaxial Layers ◽  
Processing Conditions ◽  
Induced Current ◽  
Type Conversion ◽  
Ion Etching ◽  
Type Layer ◽  
P Type

AbstractMercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.3 1) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400mT, CH4/H2, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200°C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA-ND=2×1016 cm−3,.=350 cm2.V−1. S−1).

Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion

2000 ◽  
Vol 29 (6) ◽  
pp. 837-840 ◽  
Author(s):  
J. Antoszewski ◽  
C. A. Musca ◽  
J. M. Dell ◽  
L. Faraone
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
P Type

Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 759-762
Author(s):  
Koutarou Kawahara ◽  
Giovanni Alfieri ◽  
Michael Krieger ◽  
Tsunenobu Kimoto
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Reactive Ion Etching ◽  
Deep Levels ◽  
Total Density ◽  
Ion Etching ◽  
Initial Concentration ◽  
Grown Sample ◽  
Transient Spectroscopy ◽  
P Type

In this study, deep levels are investigated, which are introduced by reactive ion etching (RIE) of n-type/p-type 4H-SiC. The capacitance of as-etched p-type SiC is remarkably small due to compensation or deactivation of acceptors. These acceptors can be recovered to the initial concentration of the as-grown sample after annealing at 1000oC. However, various kinds of defects remain at a total density of ~5× 1014 cm-3 in a surface-near region from 0.3 μm to 1.0 μm even after annealing at 1000oC. The following defects are detected by Deep Level Transient Spectroscopy (DLTS): IN2 (EC – 0.35 eV), EN (EC – 1.6 eV), IP1 (EV + 0.35 eV), IP2 (HS1: EV + 0.39 eV), IP4 (HK0: EV + 0.72 eV), IP5 (EV + 0.75 eV), IP7 (EV + 1.3 eV), and EP (EV + 1.4 eV). These defects generated by RIE can be significantly reduced by thermal oxidation and subsequent annealing at 1400oC.

scholarly journals P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth

2005 ◽  
Vol 483-485 ◽  
pp. 633-636 ◽  
Author(s):  
Mihai Lazar ◽  
Christophe Jacquier ◽  
Christiane Dubois ◽  
Christophe Raynaud ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Sheet Resistance ◽  
Doping Concentration ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Substrate Interface ◽  
Selective Epitaxial Growth ◽  
High Doping Concentration ◽  
P Type

Al-Si patterns were formed on n-type 4H-SiC substrate by a photolithographic process including wet Al etching and Si/SiC reactive ion etching (RIE) process. RF 1000°C annealing under C3H8 flow was performed to obtain p+ SiC layers by a Vapour-Liquid-Solid (VLS) process. This method enables to grow layers with different width (up to 800 µm) and various shapes. Nevertheless the remaining Al-based droplets on the largest patterns are indicators of crack defects, going through the p+ layer down to the substrate. SIMS analyses have shown an Al profile with high doping concentration near the surface, high N compensation and Si/C stoechiometry variation between the substrate and the VLS layer. The hydrogen profile follows the Al profile in the VLS layer with an overshoot at the VLS/substrate interface. I-V measurements performed directly on the semiconductor layers have confirmed the formed p-n junction and allowed to measure a sheet resistance of 5.5 kW/ı

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