Direct-search deep level photothermal spectroscopy: An enhanced reliability method for overlapped semiconductor defect state characterization

2010 ◽  
Vol 96 (26) ◽  
pp. 262112 ◽  
Author(s):  
Jun Xia ◽  
Andreas Mandelis
Keyword(s):  
Deep Level ◽  
Direct Search ◽  
Defect State ◽  
Photothermal Spectroscopy ◽  
Reliability Method

scholarly journals Electrical Defect State Distribution in Single Crystal ZnO Schottky Barrier Diodes

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 206
Author(s):  
Jinhee Park ◽  
You Seung Rim ◽  
Pradeep Senanayake ◽  
Jiechen Wu ◽  
Dwight Streit
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
Schottky Barrier ◽  
Deep Level ◽  
Depletion Region ◽  
Intrinsic Defect ◽  
Defect State ◽  
Schottky Barrier Diodes ◽  
Defect States ◽  
State Distribution

The characterization of defect states in a hydrothermally grown single crystal of ZnO was performed using deep-level transient spectroscopy in the temperature range of 77–340 K. The native intrinsic defect energy level within the ZnO band gap occurred in the depletion region of ZnO Schottky barrier diodes. A major defect level was observed, with a thermal activation energy of 0.27 eV (E3) within the defect state distribution from 0.1 to 0.57 eV below the conduction band minimum. We confirmed the maximum defect concentration to be 3.66 × 1016 cm−3 at 0.27 eV (E3). As a result, we clearly confirmed the distribution of density of defect states in the ZnO band gap.

Annealing effect on the nonradiative carrier recombination in AlGaAs/GaAs investigated by a piezoelectric photothermal spectroscopy

2001 ◽  
Vol 692 ◽  
Author(s):  
Atsuhiko Fukuyama ◽  
Hiroaki Nagatomo ◽  
Yoshito Akashi ◽  
Tetsuo Ikari
Keyword(s):  
Deep Level ◽  
Band Gap Energy ◽  
Frequency Region ◽  
Annealing Effect ◽  
Photothermal Spectroscopy ◽  
Hetero Structure ◽  
Gap Energy ◽  
Carrier Recombination ◽  
Layer Region ◽  
Lower Frequency Region

AbstractElectron non-radiative recombination process of photoexcited carriers in as-grown and annealed n-Al0.2Ga0.8As/GaAs hetero-structure samples are investigated by using a piezoelectric photothermal spectroscopy (PPTS). The PPT signal above the band-gap energy of GaAs substrate decreased when the sample was annealed at 815°C. In the frequency dependent measurements, the deviations from 1/f linear function are clearly observed in the AlGaAs/GaAs samples. This critical deviation frequency was found to shift to the lower frequency region by annealing. Our experimental results are explained by assuming that the sample annealing generates an unknown deep level in AlGaAs epitaxial layer region and this level effectively traps the photoexcited carriers non-radiatively.

Effect of Fermi Level Position in Intrinsic a-Si:H on the Evolution of Defect States under Light Exposure.

2005 ◽  
Vol 862 ◽  
Author(s):  
M. Zeman ◽  
V. Nádaždy ◽  
R. Durný ◽  
J.W. Metselaar
Keyword(s):  
Deep Level ◽  
Light Exposure ◽  
Oxide Semiconductor ◽  
Defect State ◽  
Defect States ◽  
State Distribution ◽  
Type Distribution ◽  
Transient Spectroscopy ◽  
Hydrogenated Amorphous ◽  
Positively Charged

AbstractThe evolution of the programmed defect-state distributions in intrinsic hydrogenated amorphous silicon (a-Si:H) due to light soaking was qualitatively determined from charge deep-level transient spectroscopy. The defect-state distribution in a-Si:H was programmed by applying a particular bias voltage on the metal-oxide-semiconductor structure while annealing the structure above the equilibration temperature. The programmed distributions simulate defect-state distributions in different parts of an actual a-Si:H solar cell, particularly in the intrinsic regions close to the p/i and i/n interfaces.The defect-state distribution in the bulk of the intrinsic layer is characterized by comparable contributions from the positively charged defect states above midgap, Dh, neutral states, Dz, and negatively charged states below midgap, De. In the programmedp-type (n-type) defect-state distribution there is an excess of the Dh (De) states. Light exposure modifies the p-type distribution that evolves to a broad distribution of states with a maximum around midgap. This distribution is dominated by Dz states with substantial contributions from Dh and De states. In case of n-type distribution light soaking only slightly influences the distribution by removing a part of the Dh states and by a small increase of Dz and De states.

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