Broadening effects and ergodicity in deep level photothermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate-, and time-domain study of defect state kinetics

2009 ◽  
Vol 105 (10) ◽  
pp. 103712 ◽  
Author(s):  
Jun Xia ◽  
Andreas Mandelis
Keyword(s):  
Pulse Rate ◽  
Time Domain ◽  
Deep Level ◽  
Defect State ◽  
Photothermal Spectroscopy ◽  
Defect States ◽  
Temperature Pulse

scholarly journals Electrical Defect State Distribution in Single Crystal ZnO Schottky Barrier Diodes

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 206
Author(s):  
Jinhee Park ◽  
You Seung Rim ◽  
Pradeep Senanayake ◽  
Jiechen Wu ◽  
Dwight Streit
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
Schottky Barrier ◽  
Deep Level ◽  
Depletion Region ◽  
Intrinsic Defect ◽  
Defect State ◽  
Schottky Barrier Diodes ◽  
Defect States ◽  
State Distribution

The characterization of defect states in a hydrothermally grown single crystal of ZnO was performed using deep-level transient spectroscopy in the temperature range of 77–340 K. The native intrinsic defect energy level within the ZnO band gap occurred in the depletion region of ZnO Schottky barrier diodes. A major defect level was observed, with a thermal activation energy of 0.27 eV (E3) within the defect state distribution from 0.1 to 0.57 eV below the conduction band minimum. We confirmed the maximum defect concentration to be 3.66 × 1016 cm−3 at 0.27 eV (E3). As a result, we clearly confirmed the distribution of density of defect states in the ZnO band gap.

Effect of Fermi Level Position in Intrinsic a-Si:H on the Evolution of Defect States under Light Exposure.

2005 ◽  
Vol 862 ◽  
Author(s):  
M. Zeman ◽  
V. Nádaždy ◽  
R. Durný ◽  
J.W. Metselaar
Keyword(s):  
Deep Level ◽  
Light Exposure ◽  
Oxide Semiconductor ◽  
Defect State ◽  
Defect States ◽  
State Distribution ◽  
Type Distribution ◽  
Transient Spectroscopy ◽  
Hydrogenated Amorphous ◽  
Positively Charged

AbstractThe evolution of the programmed defect-state distributions in intrinsic hydrogenated amorphous silicon (a-Si:H) due to light soaking was qualitatively determined from charge deep-level transient spectroscopy. The defect-state distribution in a-Si:H was programmed by applying a particular bias voltage on the metal-oxide-semiconductor structure while annealing the structure above the equilibration temperature. The programmed distributions simulate defect-state distributions in different parts of an actual a-Si:H solar cell, particularly in the intrinsic regions close to the p/i and i/n interfaces.The defect-state distribution in the bulk of the intrinsic layer is characterized by comparable contributions from the positively charged defect states above midgap, Dh, neutral states, Dz, and negatively charged states below midgap, De. In the programmedp-type (n-type) defect-state distribution there is an excess of the Dh (De) states. Light exposure modifies the p-type distribution that evolves to a broad distribution of states with a maximum around midgap. This distribution is dominated by Dz states with substantial contributions from Dh and De states. In case of n-type distribution light soaking only slightly influences the distribution by removing a part of the Dh states and by a small increase of Dz and De states.

Spectrum of Defect States in Porous Organic Low-k Dielectric Films, Annealed in Argon and Nitrogen

2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu
Keyword(s):  
Deep Level ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Reverse Bias Voltage ◽  
Defect States ◽  
Single Side ◽  
Sandwich Type ◽  
Transient Spectroscopy ◽  
P Type ◽  
Spectrum Deconvolution

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.

scholarly journals Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

Materials ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 1966
Author(s):  
Domenico Pellegrino ◽  
Lucia Calcagno ◽  
Massimo Zimbone ◽  
Salvatore Di Franco ◽  
Antonella Sciuto
Keyword(s):  
Deep Level ◽  
Electrical Characterization ◽  
High Fluence ◽  
Defect States ◽  
Exponential Parameter ◽  
Current Voltage ◽  
Different Temperatures ◽  
In Series ◽  
Transient Spectroscopy ◽  
Fluence Range

In this study, 4H-SiC p–n junctions were irradiated with 700 keV He+ ions in the fluence range 1.0 × 1012 to 1.0 × 1015 ions/cm2. The effects of irradiation were investigated by current–voltage (I–V) and capacitance–voltage (C–V) measurements, while deep-level transient spectroscopy (DLTS) was used to study the traps introduced by irradiation defects. Modifications of the device’s electrical performances were observed after irradiation, and two fluence regimes were identified. In the low fluence range (≤1013 ions/cm2), I–V characteristics evidenced an increase in series resistance, which can be associated with the decrease in the dopant concentration, as also denoted by C–V measurements. In addition, the pre-exponential parameter of junction generation current increased with fluence due to the increase in point defect concentration. The main produced defect states were the Z1/2, RD1/2, and EH6/7 centers, whose concentrations increased with fluence. At high fluence (>1013 ions/cm2), I–V curves showed a strong decrease in the generation current, while DLTS evidenced a rearrangement of defects. The detailed electrical characterization of the p–n junction performed at different temperatures highlights the existence of conduction paths with peculiar electrical properties introduced by high fluence irradiation. The results suggest the formation of localized highly resistive regions (realized by agglomeration of point defects) in parallel with the main junction.

scholarly journals ’N ondersoek na parameters van prognostiese belang by die hoofbeseerde pasiënt

Curationis ◽  
1981 ◽  
Vol 4 (1) ◽  
Author(s):  
Margot Hugo
Keyword(s):  
Blood Pressure ◽  
Pulse Rate ◽  
Prognostic Value ◽  
Head Injuries ◽  
Pupillary Response ◽  
Temperature Pulse ◽  
Type Of Injury

The increase in accidents and accompanying increase in severe head injuries, have led to research into various aspects of parameters of prognostic value in patients suffering from head injuries. The possible prognostic value of the observations undertaken by nurses was researched by the author. Some of the findings regarding temperature, pulse rate, blood pressure, ventilation, pupillary response and the type of injury are discussed in this article. The importance of accurate observations by nurses is stressed.

Defect Spectroscopy on Damp-Heat Treated ZnO/CdS/Cu(In,Ga)(S,Se)2/Mo Heterojunction Solar Cells

2003 ◽  
Vol 58 (12) ◽  
pp. 691-702 ◽  
Author(s):  
C. Deibel ◽  
V. Dyakonov ◽  
J. Parisi
Keyword(s):  
Heat Treatment ◽  
Activation Energy ◽  
Solar Cells ◽  
Deep Level ◽  
Heat Exposure ◽  
Continuous Distribution ◽  
Open Circuit ◽  
Defect States ◽  
Band Bending ◽  
Test Cells

The changes of defect characteristics induced by accelerated lifetime tests on solar cells of the heterostructure ZnO/CdS/Cu(In,Ga)(S,Se)2/Mo are investigated. Encapsulated modules were shown to be stable against water vapor and oxygen under outdoor conditions, whereas the fill factor and open-circuit voltage of non-encapsulated test cells are reduced after prolonged damp heat treatment in the laboratory, leading to a reduced energy conversion efficiency. We subjected non-encapsulated test cells to extended damp heat exposure at 85 ◦C ambient temperature and 85% relative humidity for various time periods (6 h, 24 h, 144 h, 294 h, and 438 h). In order to understand the origin of the pronounced changes of the cells, we applied temperature-dependent current-voltage and capacitance voltage measurements, admittance spectroscopy, and deep-level transient spectroscopy. We observed the presence of electronic defect states which show an increasing activation energy due to damp heat exposure. The corresponding attempt-to-escape frequency and activation energy of these defect states obey the Meyer-Neldel relation. We conclude that the response originates from an energetically continuous distribution of defect states in the vicinity of the CdS/chalcopyrite interface. The increase in activation energy indicates a reduced band bending at the Cu(In,Ga)(S,Se)2 surface.We also observed changes in the bulk defect spectra due to the damp-heat treatment. - PACS: 73.20.hb, 73.61.Le

scholarly journals Characteristics of defect states in periodic railway track structure

2021 ◽  
pp. 146134842110382
Author(s):  
Qiang Yi ◽  
Caiyou Zhao ◽  
Ping Wang
Keyword(s):  
Transmission Coefficient ◽  
Peak Frequency ◽  
Railway Track ◽  
Track Structure ◽  
Defect State ◽  
Defect States ◽  
Transform Method ◽  
Vibration Transmission ◽  
Local Resonance ◽  
Resonance Modes

To overcome the ill-conditioned matrix problem of the traditional transfer matrix method, the Floquet transform method and supercell technology are used to study the defect states of the periodic track structure. By solving the equations of the supercell directly, the propagation characteristics of elastic waves in the track structure with defects are analyzed. The existence of defects destroys the periodicity of track structure, thus resulting in the formation of defect states within the band gaps. Moreover, the elastic wave is localized near the defect position at the frequency of the defect state. The formation mechanism of the defect state in track structure can be explained by the local resonance at the defect. With the expansion of the defect range, the number of local resonance modes that can be formed near the defect increases, thus generating multiple defect states. Furthermore, the defect state enhances the vibration of the structure adjacent to the defect. Therefore, the vibration transmission coefficient in a finite-length range can be used to detect the defect characteristics in the track structure, and the defect degree can be evaluated by the peak frequency of the vibration transmission coefficient within the band gap.

Insights on the impact of photophysical processes and defect states evolution on the emission properties of surface-modified ZnO nanoplates for application in photocatalysis and hybrid LEDs

2021 ◽  
Author(s):  
Dhritiman Banerjee ◽  
Payal Banerjee ◽  
Asit Kumar Kar
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Surface Modification ◽  
Defect State ◽  
Defect States ◽  
Emission Properties ◽  
Photophysical Processes ◽  
State Densities ◽  
Surface Modified ◽  
The Impact

The effects of surface modification on the defect state densities, optical properties, photocatalytic and quantum efficiencies of zinc oxide (ZnO) nanoplates have been studied in this work. Here, the aim...

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