Effects of electrical stress on the leakage current characteristics of multilayer capacitor structures

2010 ◽  
Vol 96 (26) ◽  
pp. 262904 ◽  
Author(s):  
Soon-Wook Kim ◽  
Sung Kyun Lee ◽  
Young Do Kim ◽  
Sibum Kim
Keyword(s):  
Leakage Current ◽  
Electrical Stress ◽  
Multilayer Capacitor ◽  
Current Characteristics

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

Ferroelectric properties and leakage current characteristics of radio-frequency-sputtered SrBi2(V0.1Nb0.9)2O9 thin films

2004 ◽  
Vol 96 (4) ◽  
pp. 2181-2185 ◽  
Author(s):  
S. Ezhilvalavan ◽  
Victor Samper ◽  
Toh Wei Seng ◽  
Xue Junmin ◽  
John Wang
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
Current Characteristics
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