Effect of temperature on data retention of silicon‐oxide‐nitride‐oxide‐semiconductor nonvolatile memory transistors

S. L. Miller; P. J. McWhorter; T. A. Dellin; G. T. Zimmerman

doi:10.1063/1.345062

Effect of temperature on data retention of silicon‐oxide‐nitride‐oxide‐semiconductor nonvolatile memory transistors

Journal of Applied Physics ◽

10.1063/1.345062 ◽

1990 ◽

Vol 67 (11) ◽

pp. 7115-7124 ◽

Cited By ~ 20

Author(s):

S. L. Miller ◽

P. J. McWhorter ◽

T. A. Dellin ◽

G. T. Zimmerman

Keyword(s):

Nonvolatile Memory ◽

Silicon Oxide ◽

Oxide Semiconductor ◽

Effect Of Temperature ◽

Data Retention ◽

Nitride Oxide

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Robust Data Retention and Superior Endurance of Silicon–Oxide–Nitride–Oxide–Silicon-Type Nonvolatile Memory with NH3-Plasma-Treated and Pd-Nanocrystal-Embedded Charge Storage Layer

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.04dd05 ◽

2012 ◽

Vol 51 (4S) ◽

pp. 04DD05 ◽

Cited By ~ 2

Author(s):

Sheng-Hsien Liu ◽

Wen-Luh Yang ◽

Yu-Ping Hsiao ◽

Tien-Sheng Chao

Keyword(s):

Nonvolatile Memory ◽

Silicon Oxide ◽

Charge Storage ◽

Data Retention ◽

Nitride Oxide

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Robust Data Retention and Superior Endurance of Silicon–Oxide–Nitride–Oxide–Silicon-Type Nonvolatile Memory with NH$_{3}$-Plasma-Treated and Pd-Nanocrystal-Embedded Charge Storage Layer

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04dd05 ◽

2012 ◽

Vol 51 ◽

pp. 04DD05 ◽

Cited By ~ 1

Author(s):

Sheng-Hsien Liu ◽

Wen-Luh Yang ◽

Yu-Ping Hsiao ◽

Tien-Sheng Chao

Keyword(s):

Nonvolatile Memory ◽

Silicon Oxide ◽

Charge Storage ◽

Data Retention ◽

Nitride Oxide

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Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1343892 ◽

2001 ◽

Vol 89 (5) ◽

pp. 2791-2800 ◽

Cited By ~ 105

Author(s):

H. Bachhofer ◽

H. Reisinger ◽

E. Bertagnolli ◽

H. von Philipsborn

Keyword(s):

Silicon Oxide ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Transient Conduction ◽

Nitride Oxide

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Modeling of Nonvolatile Memory Operation of Polysilicon–Oxide–Nitride–Oxide–Semiconductor and Analysis of Program Characteristics Dependent on the Trap Distribution in the Silicon–Nitride Layer

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.5186 ◽

2004 ◽

Vol 43 (8A) ◽

pp. 5186-5198 ◽

Cited By ~ 7

Author(s):

Syunji Imanaga ◽

Hiroshi Aozasa

Keyword(s):

Silicon Nitride ◽

Nonvolatile Memory ◽

Nitride Layer ◽

Oxide Semiconductor ◽

Silicon Nitride Layer ◽

Program Characteristics ◽

Nitride Oxide

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Retention Reliability Improvement of Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with N2O Oxidation Tunnel Oxide

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.6463 ◽

2007 ◽

Vol 46 (10A) ◽

pp. 6463-6468 ◽

Cited By ~ 2

Author(s):

Jia-Lin Wu ◽

Chin-Hsing Kao ◽

Hua-Ching Chien ◽

Tzung-Kuen Tsai ◽

Chien-Wei Liao

Keyword(s):

Nonvolatile Memory ◽

Silicon Oxide ◽

Reliability Improvement ◽

Nitride Oxide

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Endurance and Data Retention Improvement of Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Semiconductor Memory Devices with Partially Bottom-Silicon-Rich Nitride Structure

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.6380 ◽

2005 ◽

Vol 44 (9A) ◽

pp. 6380-6384 ◽

Cited By ~ 3

Author(s):

Hua-Ching Chien ◽

Kuo-Hong Wu ◽

Jui-Wen Chang ◽

Chin-Hsing Kao ◽

Tung-Sheng Chen

Keyword(s):

Silicon Oxide ◽

Memory Devices ◽

Data Retention ◽

Semiconductor Memory ◽

Nonvolatile Semiconductor Memory ◽

Nitride Oxide

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Gated twin-bit silicon–oxide–nitride–oxide–silicon NAND flash memory for high-density nonvolatile memory

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.064201 ◽

2015 ◽

Vol 54 (6) ◽

pp. 064201

Author(s):

Yoon Kim ◽

Won Bo Shim ◽

Byung-Gook Park

Keyword(s):

Flash Memory ◽

Nonvolatile Memory ◽

Silicon Oxide ◽

High Density ◽

Nand Flash ◽

Nand Flash Memory ◽

Nitride Oxide

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70 nm Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory Devices Using Fowler-Nordheim Programming and Hot Hole Erase Method

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2207 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2207-2210 ◽

Cited By ~ 4

Author(s):

Soodoo Chae ◽

Changju Lee ◽

Juhyung Kim ◽

Sukkang Sung ◽

Jaeseong Sim ◽

...

Keyword(s):

Nonvolatile Memory ◽

Silicon Oxide ◽

Memory Devices ◽

Nonvolatile Memory Devices ◽

Nitride Oxide

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Simulation of Nanoscale Two-Bit Not-And-type Silicon–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory Devices with a Separated Double-Gate Fin Field Effect Transistor Structure Containing Different Tunneling Oxide Thicknesses

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.06fd12 ◽

2009 ◽

Vol 48 (6) ◽

pp. 06FD12

Author(s):

Se Woong Oh ◽

Sang Su Park ◽

Dong Hun Kim ◽

Hyun Woo Kim ◽

Tae Whan Kim

Keyword(s):

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Oxide ◽

Memory Devices ◽

Double Gate ◽

Transistor Structure ◽

Nonvolatile Memory Devices ◽

Effect Transistor ◽

Nitride Oxide

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High-pressure deuterium annealing for improving the reliability characteristics of silicon–oxide–nitride–oxide–silicon nonvolatile memory devices

Applied Physics Letters ◽

10.1063/1.1842363 ◽

2004 ◽

Vol 85 (26) ◽

pp. 6415-6417 ◽

Cited By ~ 5

Author(s):

Sangmoo Choi ◽

Man Jang ◽

Hokyung Park ◽

Hyunsang Hwang ◽

Sanghun Jeon ◽

...

Keyword(s):

High Pressure ◽

Nonvolatile Memory ◽

Silicon Oxide ◽

Memory Devices ◽

Reliability Characteristics ◽

Nonvolatile Memory Devices ◽

Nitride Oxide

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