High-pressure deuterium annealing for improving the reliability characteristics of silicon–oxide–nitride–oxide–silicon nonvolatile memory devices

2004 ◽  
Vol 85 (26) ◽  
pp. 6415-6417 ◽  
Author(s):  
Sangmoo Choi ◽  
Man Jang ◽  
Hokyung Park ◽  
Hyunsang Hwang ◽  
Sanghun Jeon ◽  
...  
Keyword(s):  
High Pressure ◽  
Nonvolatile Memory ◽  
Silicon Oxide ◽  
Memory Devices ◽  
Reliability Characteristics ◽  
Nonvolatile Memory Devices ◽  
Nitride Oxide

70 nm Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory Devices Using Fowler-Nordheim Programming and Hot Hole Erase Method

2004 ◽  
Vol 43 (4B) ◽  
pp. 2207-2210 ◽  
Author(s):  
Soodoo Chae ◽  
Changju Lee ◽  
Juhyung Kim ◽  
Sukkang Sung ◽  
Jaeseong Sim ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Silicon Oxide ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Nitride Oxide

High Pressure H2/D2 Annealed SONOS Nonvolatile Memory Devices

2004 ◽  
Author(s):  
Sangmoo Choi ◽  
Man Jang ◽  
Hokyung Park ◽  
Sanghun Jeon ◽  
Juhyung Kim ◽  
...  
Keyword(s):  
High Pressure ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices

Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing

2007 ◽  
Vol 84 (9-10) ◽  
pp. 2002-2005 ◽  
Author(s):  
Man Chang ◽  
Musarrat Hasan ◽  
Seungjae Jung ◽  
Hokyung Park ◽  
Minseok Jo ◽  
...  
Keyword(s):  
High Pressure ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Vapor Annealing ◽  
Nonvolatile Memory Devices

Fabrication of YMnO3 Films: New Candidate for Non-Volatile Memory Devices

1996 ◽  
Vol 433 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tadashi Ishida ◽  
Takeshi Yoshimura ◽  
Taichiro Ito
Keyword(s):  
Nonvolatile Memory ◽  
Valence Electron ◽  
Bottom Electrode ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Deposition Condition ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Nonvolatile Memory Devices ◽  
First Time

AbstractWe have proposed ReMnO3 (Re:rare earth) thin films, as a new candidate for nonvolatile memory devices. In this paper, we try to fabricate (0001) oriented YMnO3 films on (111)MgO, (0001)ZnO:Al/(0001) sapphire and (111)Pt/(111)MgO using rf magnetron sputtering. We succeed in obtaining (0001) epitaxial YMnO3 films on (111) MgO and (0001)ZnO:Al/(0001)sapphire substrate, and polycrystalline films on (111)Pt/(1 11)MgO for the first time. Electrical property of the bottom electrode (ZnO:Al) changes with varying the deposition condition of YMnO3 films. However, we find an optimum deposition condition of ZnO:Al film such that it functions as a bottom electrode even after YMnO3 film deposition. The dielectric properties of the epitaxial and polycrystalline YMnO3 films are almost the same. The YMnO3 films show leaky electrical properties. This may be caused by a change in the valence electron of Mn from 3+.

Nonvolatile memory devices with Cu2S and Cu-Pc bilayered films

2007 ◽  
Vol 91 (7) ◽  
pp. 073511 ◽  
Author(s):  
Liang Chen ◽  
Yidong Xia ◽  
Xuefei Liang ◽  
Kuibo Yin ◽  
Jiang Yin ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices
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