Particulate generation in silane/ammonia rf discharges

1990 ◽  
Vol 67 (9) ◽  
pp. 3999-4011 ◽  
Author(s):  
Harold M. Anderson ◽  
Rahul Jairath ◽  
Joseph L. Mock
Keyword(s):  
1969 ◽  
Vol 40 (5) ◽  
pp. 2350-2356 ◽  
Author(s):  
J. L. Gilkinson ◽  
Herman Held ◽  
L. M. Chanin
Keyword(s):  

1984 ◽  
Vol 38 ◽  
Author(s):  
F. J. Kampas

AbstractIntensities of CH optical emission and electrical properties of methane rf discharges as a function of pressure are presented and discussed. The results are consistent with a model in which the properties of the discharge are dominated by secondary electrons traversing the gap between the electrodes.


1987 ◽  
Vol 98 ◽  
Author(s):  
S. E. Savas

ABSTRACTThe dependences of the electrode self-bias voltage and the ratio of ion energies on electrode area ratio are calculated for a model of capacitively coupled rf discharges. It is assumed that concentric spherical elecrodes with fluid-like radial ion flow adequately models the ion motion, that sheath impedances are dominant, and that ionization processes in the glow are due to ohmically heated electrons. Results show that the ratio of ion energies impacting the smaller electrode to those on the larger depends on the ratio of electrode areas in a more complex manner than a power law.The reason for this is that sheath impedances are more resistive or capacitive at different times in the rf cycle. The self-bias ratio is found to depend relatively little on the ionization model or the pressure but differs substantially from the “power law” result. The agreement of measurements with the model is fairly good.


1995 ◽  
Vol 28 (3) ◽  
pp. 488-492 ◽  
Author(s):  
R Krimke ◽  
H M Urbassek
Keyword(s):  

1990 ◽  
Author(s):  
M.V. Alves ◽  
M.A. Liberman ◽  
V. Vahedi ◽  
C.K. Birdsall
Keyword(s):  

2017 ◽  
pp. 45-108
Author(s):  
Yuri P. Raizer ◽  
Mikhail N. Shneider ◽  
Nikolai A. Yatsenko

1963 ◽  
Vol 34 (10) ◽  
pp. 3148-3149 ◽  
Author(s):  
R. A. Paananen ◽  
C. L. Tang ◽  
F. A. Horrigan ◽  
H. Statz
Keyword(s):  

1993 ◽  
Vol 73 (3) ◽  
pp. 1073-1079 ◽  
Author(s):  
J. D. P. Passchier ◽  
W. J. Goedheer

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