Ingrain and grain boundary scattering effects on electron mobility of transparent conducting polycrystalline Ga-doped ZnO films

2010 ◽  
Vol 107 (12) ◽  
pp. 123534 ◽  
Author(s):  
Takahiro Yamada ◽  
Hisao Makino ◽  
Naoki Yamamoto ◽  
Tetsuya Yamamoto
Keyword(s):  
Grain Boundary ◽  
Electron Mobility ◽  
Zno Films ◽  
Boundary Scattering ◽  
Transparent Conducting ◽  
Grain Boundary Scattering ◽  
Scattering Effects ◽  
Doped Zno

Grain boundary scattering in aluminium-doped ZnO films

1991 ◽  
Vol 205 (1) ◽  
pp. 64-68 ◽  
Author(s):  
S. Ghosh ◽  
A. Sarkar ◽  
S. Chaudhuri ◽  
A.K. Pal
Keyword(s):  
Grain Boundary ◽  
Zno Films ◽  
Boundary Scattering ◽  
Grain Boundary Scattering ◽  
Doped Zno

scholarly journals Impacts of the thickness on the electron mobility of gallium and hydrogen co– doped zinc oxide thin films

2019 ◽  
Vol 2 (2) ◽  
pp. 82-87
Author(s):  
Anh Thanh Tuan Pham ◽  
Dung Van Hoang ◽  
Truong Huu Nguyen ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Electron Mobility ◽  
High Mobility ◽  
Boundary Scattering ◽  
Grain Boundary Scattering ◽  
Average Transmittance ◽  
Wide Wavelength Range ◽  
Doped Zno ◽  
Co Doped

this work, impacts of the thickness on electron mobility of Ga and H2 co-doped ZnO (HGZO) thin films were investigated. The HGZO films were prepared on glass substrate by using magnetron sputtering from ceramic Ga-doped ZnO (GZO) target in the gas mixture of argon and hydrogen. Based on the Hall measurement, the mobility enhanced fastly from 44.6 to 53.4cm2/Vs with the increasing thickness from 350 to 900 nm, then tends to be saturated at ~55cm2/Vs with further thickness. Most of the films achieve the mobility of >50cm2/Vs, which is very high value for sputtered TCOs thin films. The thicknessdependent mobility is explained in term of grain boundary scattering. The improvement of crystalline quality reduced grain boundary scattering, which lead to the fast increase in mobility of the films with 350–900nm in thickness. When the thickness increased more than 900nm, however, the appearance of many defects increased scattering centers and saturates the mobility. Furthermore, the results showed the HGZO films with optimum thickness of 800nm obtained low resistivity (5.3 10-4􀁛cm), high average transmittance (83.3%) in the wide wavelength range of 400–1100nm, and the highest figure of merit (10.3 103􀁛-1cm-1) corresponding to high mobility (51.1cm2/Vs).

Grain boundary scattering effects on mobilities in p-type polycrystalline SnSe

2017 ◽  
Vol 5 (39) ◽  
pp. 10191-10200 ◽  
Author(s):  
Si Wang ◽  
Si Hui ◽  
Kunling Peng ◽  
Trevor P. Bailey ◽  
Xiaoyuan Zhou ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Single Crystals ◽  
Boundary Scattering ◽  
Grain Boundary Scattering ◽  
Scattering Effects ◽  
P Type

Grain boundary scattering is the dominant reason for the deteriorated performance of polycrystalline SnSe compared to single crystals.

Hydrogen enhancing Ga doping efficiency and electron mobility in high-performance transparent conducting Ga-doped ZnO films

2021 ◽  
Vol 860 ◽  
pp. 158518
Author(s):  
Anh Tuan Thanh Pham ◽  
Dung Van Hoang ◽  
Truong Huu Nguyen ◽  
Oanh Kieu Truong Le ◽  
Deniz P. Wong ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Performance ◽  
Zno Films ◽  
Transparent Conducting ◽  
Doped Zno ◽  
Ga Doping

Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films

2013 ◽  
Vol 6 (2) ◽  
pp. 021001 ◽  
Author(s):  
Yuewei Zhang ◽  
Xinqiang Wang ◽  
Xiantong Zheng ◽  
Guang Chen ◽  
Dingyu Ma ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Electron Mobility ◽  
Boundary Scattering ◽  
Grain Boundary Scattering

scholarly journals Nitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxide

2018 ◽  
Vol 2 (4) ◽  
Author(s):  
D. Ali ◽  
M. Z. Butt ◽  
C. Coughlan ◽  
D. Caffrey ◽  
I. V. Shvets ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Transparent Conducting Oxide ◽  
Transparent Conducting ◽  
Doped Zno

Study of transparent conducting Ga-doped ZnO films grown by reactive co-sputtering of Zn and GaAs

2018 ◽  
Author(s):  
Shravan K. Appani ◽  
Samanth V. Rayapati ◽  
D. S. Sutar ◽  
S. S. Major
Keyword(s):  
Zno Films ◽  
Transparent Conducting ◽  
Doped Zno

Grain boundary scattering in Ru and Cu interconnects

2020 ◽  
Author(s):  
Troels Markussen ◽  
Shela Aboud ◽  
Anders Blom ◽  
Nicholas A. Lanzillo ◽  
Tue Gunst ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Boundary Scattering ◽  
Cu Interconnects ◽  
Grain Boundary Scattering
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