Oxygen distribution in silicon‐on‐insulator layers obtained by zone melting recrystallization

1990 ◽  
Vol 67 (12) ◽  
pp. 7337-7347 ◽  
Author(s):  
P. W. Mertens ◽  
J. Leclair ◽  
H. E. Maes ◽  
W. Vandervorst
Keyword(s):  
Zone Melting ◽  
Silicon On Insulator ◽  
Oxygen Distribution ◽  
Insulator Layers

Qualitative Model for Surface Rippling of Zone Melting Recrystallized Silicon-on-Insulator Layers

1989 ◽  
Vol 157 ◽  
Author(s):  
Paul W. Mertens ◽  
Herman E. Maes
Keyword(s):  
Mass Transport ◽  
Thermal Gradient ◽  
Large Scale ◽  
Silicon Film ◽  
Zone Melting ◽  
Silicon On Insulator ◽  
Qualitative Model ◽  
Ripple Formation ◽  
Insulator Layers ◽  
Thickness Variations

ABSTRACTIn zone melting recrystallization (ZMR) of thin silicon films different mechanisms can lead to thickness variations of the obtained silicon film. In this paper we will concentrate on some of these phenomena. One is the large scale mass transport, which typically leads to a thinned region at the start of the ZMR process. Another one, which is to a certain extent related to the first one, is the typical ripple formation that occurs especially under conditions that are commonly referred to as “low thermal gradient” regime.

Thermal Analysis of Zone‐Melting Recrystallization of Silicon‐on‐Insulator Structures with an Infrared Heat Source: An Overview

1992 ◽  
Vol 139 (9) ◽  
pp. 2687-2695 ◽  
Author(s):  
I. N. Miaoulis ◽  
P. Y. Wong ◽  
S. M. Yoon ◽  
R. D. Robinson ◽  
C. K. Hess
Keyword(s):  
Thermal Analysis ◽  
Heat Source ◽  
Zone Melting ◽  
Silicon On Insulator

The Role of Oxygen in Zone-Melting Recrystallization of Silicon-On-Insulator Films

1983 ◽  
Vol 23 ◽  
Author(s):  
John C. C. Fan ◽  
B-Y. Tsaur ◽  
C. K. Chen ◽  
J. R. Dick ◽  
L. L. Kazmerski
Keyword(s):  
Dissolved Oxygen ◽  
Mass Spectroscopy ◽  
Zone Melting ◽  
Constitutional Supercooling ◽  
Common Origin ◽  
Silicon On Insulator ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

ABSTRACTUsing secondary-ion mass spectroscopy, we have found that oxygen is strongly concentrated at the sub-boundaries in zone-melting-recrystallized silicon-on-insulator films prepared by the graphite-strip-heater technique. This observation suggests that the formation of sub-boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into the molten Si zone from the adjacent SiO2 layers. Since all zone-melting-recrystallized films to date have been bordered by SiO2 layers, regardless of the heating techniques employed, the sub-boundaries almost always present in these films may well have dissolved oxygen as their common origin.

Formation and nondestructive characterization of ion implanted silicon‐on‐insulator layers

1987 ◽  
Vol 51 (5) ◽  
pp. 343-345 ◽  
Author(s):  
J. Narayan ◽  
S. Y. Kim ◽  
K. Vedam ◽  
R. Manukonda
Keyword(s):  
Silicon On Insulator ◽  
Insulator Layers ◽  
Nondestructive Characterization ◽  
Ion Implanted

Analysis of structural defects in silicon-on-insulator layers with x-ray reflection topography

1989 ◽  
Vol 97 (3-4) ◽  
pp. 599-606
Author(s):  
M.J.J. Theunissen ◽  
A.H. Goemans ◽  
A.J.R. De Kock ◽  
M.L.J. Geijselaers
Keyword(s):  
Silicon On Insulator ◽  
Structural Defects ◽  
X Ray ◽  
Insulator Layers
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