scholarly journals Erratum: ‘‘Analytical investigation of the junction space‐charge region properties of heterojunction semiconductor devices: Application to n‐ALzGa1−zAs/p‐GaAs system’’ [J. Appl. Phys. 63, 5766 (1988)]

1989 ◽  
Vol 66 (4) ◽  
pp. 1889-1889
Author(s):  
S. Noor Mohammad
Keyword(s):  
Space Charge ◽  
Space Charge Region ◽  
Semiconductor Devices ◽  
Analytical Investigation

Space charge region effects in bidirectional illuminated P3HT:PCBM bulk heterojunction photodetectors

2015 ◽  
Vol 22 ◽  
pp. 29-34 ◽  
Author(s):  
Patric Büchele ◽  
Mauro Morana ◽  
Diego Bagnis ◽  
Sandro Francesco Tedde ◽  
David Hartmann ◽  
...  
Keyword(s):  
Space Charge ◽  
Space Charge Region ◽  
Bulk Heterojunction

Influence of a space charge region on charge carrier kinetics in silicon wafers

2002 ◽  
Vol 91 (11) ◽  
pp. 9147-9150 ◽  
Author(s):  
S. von Aichberger ◽  
O. Abdallah ◽  
F. Wünsch ◽  
M. Kunst
Keyword(s):  
Charge Carrier ◽  
Space Charge ◽  
Space Charge Region ◽  
Silicon Wafers

Surface defect chemistry of Y-substituted and hydrated BaZrO3 with subsurface space-charge regions

2016 ◽  
Vol 4 (19) ◽  
pp. 7437-7444 ◽  
Author(s):  
Jonathan M. Polfus ◽  
Tor S. Bjørheim ◽  
Truls Norby ◽  
Rune Bredesen
Keyword(s):  
Surface Layer ◽  
Space Charge ◽  
Space Charge Region ◽  
First Principles ◽  
Surface Defect ◽  
Surface Defects ◽  
Defect Chemistry ◽  
First Principles Calculations ◽  
Proton Conducting ◽  
Charged Species

First-principles calculations were utilized to elucidate the complete defect equilibria of surfaces of proton conducting BaZrO3, encompassing charged species adsorbed to the surface, defects in the surface layer as well as in the subsurface space-charge region and bulk.

Unified Analysis of the Metal Vapour Arc

1973 ◽  
Vol 28 (3-4) ◽  
pp. 417-428 ◽  
Author(s):  
G. Ecker
Keyword(s):  
Space Charge ◽  
Electron Temperature ◽  
Current Density ◽  
Space Charge Region ◽  
Decisive Role ◽  
Emission Current Density ◽  
Mean Free Path ◽  
Vacuum Arc ◽  
Metal Vapour ◽  
Cathode Drop

Abstractfor given values of the total current density j and the cathode spot surface temperature T a unified and consistent calculation of the cathode drop, Uc , the electron temperature in the ionization region T _- the electron emission current density je , the ion current density j+ , and the extension of the space charge region lsp are presented.We find that the counter diffusion of plasma electrons into the space charge region plays a decisive role. It causes an effective space charge region extension lsp of a few plasma electron Debey lengths which in general is much less than the ion mean-free-path commonly used. Without the effect of the counter diffusing electrons, the theoretical results deviate from the experimental data by orders of magnitude.For the example of a Cu metal vapour-or vacuum arc the cathode drop is found to be approximately Uc = 15 [V], the electron temperature about T- =25000 [°K] and the ratio j+/j= 0.5.Since the analysis allows for multiple ionization the presence of multiply charged ions in the spot area can be calculated.The results of this investigation justify within the E-areas the approximations used in the analysis for the copper arc in an earlier investigation 1. Outside these E-areas a recalculation with the new results derived here may cause markable changes.

Thermally Stimulated Currents in the Range of Unity Gain Factor

1971 ◽  
Vol 26 (5) ◽  
pp. 819-823
Author(s):  
J. A. Bragagnolo ◽  
G. Dussel ◽  
K. W. Böer ◽  
G. A. Dussel
Keyword(s):  
Space Charge ◽  
Space Charge Region ◽  
Thermal Quenching ◽  
Gain Factor ◽  
Thermally Stimulated Current ◽  
Thermally Stimulated Currents ◽  
Positive Space Charge ◽  
Unity Gain ◽  
Positive Space

Abstract Thermally stimulated current-curves in CdS platelets with slit electrodes change their character when the photoelectric gain-factor increases above one. Here the photocurrent remains essentially frozen-in up to temperatures at which marked thermal quenching sets in. A positive space charge region is assumed to be responsible for the frozen-in photocurrent. A reliable TSC-analysis of the trap distribution can be conducted only for gain factors considerably below one.

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