Structural properties of Hg1−xZnxTe‐CdTe strained layer superlattices and the reduction of threading dislocations from a CdTe buffer layer

1989 ◽  
Vol 66 (7) ◽  
pp. 2980-2983 ◽  
Author(s):  
J. Petruzzello ◽  
D. Olego ◽  
X. Chu ◽  
J. P. Faurie
Keyword(s):  
Buffer Layer ◽  
Structural Properties ◽  
Threading Dislocations ◽  
Strained Layer ◽  
Cdte Buffer Layer ◽  
Cdte Buffer ◽  
Strained Layer Superlattices

Effect of the orientations and polarities of GaAs substrates CdTe buffer layer structural properties

1993 ◽  
Vol 16 (1-3) ◽  
pp. 145-150 ◽  
Author(s):  
A. Tromson-Carli ◽  
G. Patriarche ◽  
R. Druilhe ◽  
A. Lusson ◽  
Y. Marfaing ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Structural Properties ◽  
Gaas Substrates ◽  
Cdte Buffer Layer ◽  
Cdte Buffer

Understanding the Evolution of CdTe Buffer Layer Surfaces on ZnTe/Si(211) and GaAs(211)B During Cyclic Annealing

2012 ◽  
Vol 41 (10) ◽  
pp. 2975-2980 ◽  
Author(s):  
M. Jaime-Vasquez ◽  
R.N. Jacobs ◽  
C. Nozaki ◽  
J.D. Benson ◽  
L.A. Almeida ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Cyclic Annealing ◽  
Cdte Buffer Layer ◽  
Cdte Buffer

Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices

1987 ◽  
Vol 91 ◽  
Author(s):  
N. El-Masry ◽  
N. Hamaguchi ◽  
J.C.L. Tarn ◽  
N. Karam ◽  
T.P. Humphreys ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Defect Reduction ◽  
Strained Layer ◽  
Si Substrates ◽  
Density Of Dislocations ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTInxGa11-xAs-GaAsl-yPy strained layer superlattice buffer layers have been used to reduce threading dislocations in GaAs grown on Si substrates. However, for an initially high density of dislocations, the strained layer superlattice is not an effective filtering system. Consequently, the emergence of dislocations from the SLS propagate upwards into the GaAs epilayer. However, by employing thermal annealing or rapid thermal annealing, the number of dislocation impinging on the SLS can be significantly reduced. Indeed, this treatment greatly enhances the efficiency and usefulness of the SLS in reducing the number of threading dislocations.

scholarly journals The Structure of GaAs/Si(211) Heteroepitaxial Layers

1987 ◽  
Vol 91 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
E.R. Weber ◽  
J. Washburn ◽  
T.Y. Liu ◽  
H. Kroemer
Keyword(s):  
Buffer Layer ◽  
Surface Preparation ◽  
Gaas Layer ◽  
Misfit Dislocations ◽  
Strained Layer ◽  
Si Substrates ◽  
Density Of Dislocations ◽  
Gaas Buffer Layer ◽  
Graded Layers ◽  
Strained Layer Superlattices

ABSTRACTGallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface.Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505°C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (∼;5×l07/cm2) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates [8]. Applying three sets of the same strained layersdecreased the density of dislocations an additional ∼2/3 times.

X‐ray diffraction analysis of buffer layer effects on lattice distortions of strained layer superlattices

1987 ◽  
Vol 62 (3) ◽  
pp. 1124-1127 ◽  
Author(s):  
K. Kamigaki ◽  
H. Sakashita ◽  
H. Kato ◽  
M. Nakayama ◽  
N. Sano ◽  
...  
Keyword(s):  
Diffraction Analysis ◽  
Buffer Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Strained Layer ◽  
Lattice Distortions ◽  
Strained Layer Superlattices

Characterization of ion‐implantation doping of strained‐layer superlattices. I. Structural properties

1986 ◽  
Vol 60 (10) ◽  
pp. 3631-3640 ◽  
Author(s):  
D. R. Myers ◽  
S. T. Picraux ◽  
B. L. Doyle ◽  
G. W. Arnold ◽  
R. M. Biefeld
Keyword(s):  
Ion Implantation ◽  
Structural Properties ◽  
Strained Layer ◽  
Strained Layer Superlattices

scholarly journals Оптимизация структурных свойств и морфологии поверхности метаморфного буферного слоя In-=SUB=-x-=/SUB=-Al-=SUB=-1-x-=/SUB=-As с корневым профилем изменения состава (x=0.05-0.83), выращиваемого методом молекулярно-пучковой эпитаксии на GaAs (001)

2018 ◽  
Vol 52 (1) ◽  
pp. 127
Author(s):  
В.А. Соловьев ◽  
М.Ю. Чернов ◽  
А.А. Ситникова ◽  
П.Н. Брунков ◽  
Б.Я. Мельцер ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Structural Properties ◽  
Surface Density ◽  
Morphological Characteristics ◽  
Growth Conditions ◽  
Surface Pattern ◽  
Threading Dislocations ◽  
Metamorphic Buffer

AbstractThe results of optimization of the design and growth conditions of an In_ x Al_1– x As metamorphic buffer layer with a high In content ( x = 0.05–0.83) grown via MBE on GaAs(001) substrates with the purpose of optimizing its surface morphological characteristics and structural properties and lowering the surface density of threading dislocations. The lowest surface-pattern roughness RMS = 2.3 nm (on an area of 10 × 10 μm) and density of threading dislocations of 5 × 10^7 cm^–2 are found in the samples with a convex-graded metamorphic buffer layer.

Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe

2019 ◽  
Vol 53 (1) ◽  
pp. 132-137
Author(s):  
V. A. Shvets ◽  
I. A. Azarov ◽  
D. V. Marin ◽  
M. V. Yakushev ◽  
S. V. Rykhlitsky
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Cdte Buffer Layer ◽  
Cdte Buffer ◽  
Ellipsometric Method

Dislocation Density Reduction in GaAs Epilayers on Si Using Strained Layer Superlattices

1989 ◽  
Vol 160 ◽  
Author(s):  
S. Sharan ◽  
J. Narayan ◽  
J. C. C. Fan
Keyword(s):  
Dislocation Density ◽  
Defect Density ◽  
Full Potential ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Strained Layer ◽  
Density Reduction ◽  
Threading Dislocation Density ◽  
Superlattice Structures ◽  
Strained Layer Superlattices

AbstractDefects such as dislocations and interfaces play a crucial role in the performance of heterostracture devices. The full potential of GaAs on Si heterostructures can only be realized by controlling the defect density. The reduction of threading dislocations by the use of strained layer superlattices has been studied in these heterostructures. Several superlattice structures have been used to reduce the density of threading dislocations in the GaAs epilayer. The use of strained layer superlattices in conjunction with rapid thermal annealing was most effective in reducing threading dislocation density. Transmission electron microscopy has been used to study the dislocation density reduction and the interaction of threading dislocations with the strained layers. A model has been developed based on energy considerations to determine the critical thickness required for the bending of threading dislocations.

Sign in / Sign up

Export Citation Format

Share Document