Optical behavior near the fundamental absorption edge of sputter‐deposited microcrystalline aluminum nitride

1989 ◽  
Vol 66 (9) ◽  
pp. 4360-4363 ◽  
Author(s):  
C. R. Aita ◽  
C. J. G. Kubiak ◽  
F. Y. H. Shih
1985 ◽  
Vol 47 ◽  
Author(s):  
C. J. G. Kubiak ◽  
C. R. Aita ◽  
F. S. Hickernell ◽  
S. J. Joseph

ABSTRACTFilms which are nominally aluminum nitride were grown by reactive sputter deposition using an aluminum target and rf-excited nitrogen discharges operated at power levels from 100 to 800W. Depositions were made on water-cooled (111)-cut Si and amorphous quartz substrates. The optical behavior of these films and its relationship to chemistry is discussed in the present paper.


1977 ◽  
Vol 81 (2) ◽  
pp. 665-670 ◽  
Author(s):  
G. Antonioli ◽  
D. Bianchi ◽  
V. Canevari ◽  
U. Emiliani ◽  
P. Podini

1996 ◽  
Vol 6 (1-2) ◽  
pp. 117-120 ◽  
Author(s):  
M. Kalafi ◽  
H. Bidadi ◽  
H. Tajalli ◽  
V. Salmanov

Author(s):  
V. T. Avanesyan ◽  
P. S. Provotorov ◽  
V. M. Stozharov ◽  
M. M. Sychev ◽  
A. A. Eruzin

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