Temperature distributions produced in anN‐layer film structure by static or scanning laser or electron beam with application to magneto‐optical media

1989 ◽  
Vol 66 (12) ◽  
pp. 5738-5748 ◽  
Author(s):  
M. R. Madison ◽  
T. W. McDaniel
Keyword(s):  
Electron Beam ◽  
Film Structure ◽  
Scanning Laser ◽  
Layer Film ◽  
Optical Media ◽  
Temperature Distributions

Effect of Ni film structure and surface morphology on the growth of graphene by PECVD

2018 ◽  
Vol 11 (01) ◽  
pp. 1850011
Author(s):  
Lipeng Ren ◽  
Wei Wang ◽  
Chenglei Yu ◽  
Saisai Duan ◽  
Wenjing Ma ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Particle Size ◽  
Electron Beam ◽  
Low Temperature ◽  
Surface Morphology ◽  
Silicon Substrate ◽  
Amorphous State ◽  
Electron Beam Evaporation ◽  
Film Structure ◽  
Bilayer Structure

In this work, Ni films with the thickness of 50[Formula: see text]nm were deposited on (110) silicon substrate by electron beam evaporation at the temperature of 125[Formula: see text]C, 300[Formula: see text]C and 500[Formula: see text]C. Graphene was prepared on Ni films by PECVD to study the effect of Ni film structure and surface morphology on the graphene grown by PECVD. The result shows that the particle size and surface roughness of Ni film increase, as the temperature of substrate go up. The Ni film deposited at 125[Formula: see text]C exhibits amorphous state, and the Ni films deposited at 300[Formula: see text]C and 500[Formula: see text]C exhibit (111) microcrystal structure. The graphene grown on the microcrystalline Ni film deposited at 300[Formula: see text]C is the bilayer structure with less defects and uniform morphology. The graphene prepared on the microcrystalline Ni film deposited at 500[Formula: see text]C has more defects, layers and obvious plane undulation. The analysis indicates that microcrystalline Ni film deposited at 300[Formula: see text]C can be used by PECVD at low temperature to prepare a bilayer graphene with less defects and uniform morphology.

ELECTRON-BEAM TUBE WITH A SEMICONDUCTOR TARGET. AN ELECTRON-BEAM-PUMPED SCANNING LASER

1972 ◽  
Vol 2 (3) ◽  
pp. 297-299
Author(s):  
Yu A Akimov ◽  
A A Burov ◽  
O I Govorkov ◽  
E A Zagarinskii ◽  
I V Kryukova ◽  
...  
Keyword(s):  
Electron Beam ◽  
Scanning Laser ◽  
Beam Tube

Microscale Radiation Effects in Multilayer Thin-Film Structures During Rapid Thermal Processing

1993 ◽  
Vol 303 ◽  
Author(s):  
Peter Y. Wong ◽  
Christopher K. Hess ◽  
Ioannis N. Miaoulis
Keyword(s):  
Thin Film ◽  
Numerical Model ◽  
Thermal Processing ◽  
Radiation Effects ◽  
Rapid Thermal Processing ◽  
Chemical Vapor ◽  
Film Structure ◽  
Transient Temperature ◽  
Multilayered Structures ◽  
Temperature Distributions

ABSTRACTThe individual film thicknesses of multilayered structures processed by rapid thermal processing are of the same order as the wavelengths of the incident radiation. This induces optical interference effects which are responsible for the strong dependency of surface reflectivity, emissivity, and temperature distributions on the geometry of the layering structures, presence of patterns, and thickness of the films. A two-dimensional, finitedifference numerical model has been developed to investigate this microscale radiation phenomena and identify the critical processing parameters which affect rapid thermal processing of multilayer thin films. The uniformity of temperature distributions throughout the wafer during rapid thermal processing is directly affected by incident heater configurations, ramping conditions, wafer-edge effects, and thin-film layering structure. Results from the numerical model for various film structures are presented for chemical vapor deposition of polycrystalline silicon over oxide films on substrate. A novel technique using an edge-enhanced wafer which has a different film structure near its edge is presented as a control over the transient temperature distribution.

Simulation on the Thermal Behavior in Vacuum Electron Beam Welding of Magnesium Alloy

2011 ◽  
Vol 189-193 ◽  
pp. 3317-3325
Author(s):  
Yi Luo ◽  
Jin He Liu ◽  
Hong Ye
Keyword(s):  
Electron Beam ◽  
Magnesium Alloy ◽  
Thermal Behavior ◽  
Thermal Effect ◽  
Electron Beam Welding ◽  
Metal Vapor ◽  
Welding Parameters ◽  
Deep Penetration ◽  
Temperature Distributions ◽  
Metal Vapor Plasma

The thermal behavior during electron beam welding on magnesium alloy were analyzed and simulated. According to the thermal effect of the electron-beam-generated keyhole, a mathematic model of rotary Gaussian body heat source with incremental power-density-distribution was developed. This model can be useful for simulating the thermal effect of metal vapor plasma on the surface of the workpiece and the deep-penetrating effect of the electron beam. By the action of thermal model, the characteristics of temperature field during vacuum electron beam welding on AZ61 magnesium alloy were studied by the method of finite element analysis. And then, the influence of welding parameters on the temperature distributions and the weld contours were analyzed. The simulations and experiments showed that the different deep-penetration effects and temperature distributions were achieved with the varying welding energy inputs, and the metal vapor plasma has a significant impact on the weld contour of magnesium alloy.

Temperature distributions of electron beam-irradiated samples by scanning electron microscopy

2012 ◽  
Vol 248 (3) ◽  
pp. 228-233 ◽  
Author(s):  
T. TOKUNAGA ◽  
T. NARUSHIMA ◽  
T. YONEZAWA ◽  
T. SUDO ◽  
S. OKUBO ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Temperature Distributions ◽  
Scanning Electron
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