Temperature formation of the inversion layer in metal‐oxide‐semiconductor structures: Theoretical model and application to the determination of minority‐capture cross sections of the gold acceptor level in silicon

D. Vuillaume; M. Lannoo; J. C. Bourgoin; E. Rosencher

doi:10.1063/1.343617

Temperature formation of the inversion layer in metal‐oxide‐semiconductor structures: Theoretical model and application to the determination of minority‐capture cross sections of the gold acceptor level in silicon

Journal of Applied Physics ◽

10.1063/1.343617 ◽

1989 ◽

Vol 66 (12) ◽

pp. 5920-5929 ◽

Cited By ~ 4

Author(s):

D. Vuillaume ◽

M. Lannoo ◽

J. C. Bourgoin ◽

E. Rosencher

Keyword(s):

Theoretical Model ◽

Cross Sections ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Acceptor Level ◽

Capture Cross ◽

Semiconductor Structures ◽

Capture Cross Sections

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Temperature and energy dependences of capture cross sections at surface states in Si metal‐oxide‐semiconductor diodes measured by deep level transient spectroscopy

Journal of Applied Physics ◽

10.1063/1.329128 ◽

1981 ◽

Vol 52 (5) ◽

pp. 3504-3508 ◽

Cited By ~ 69

Author(s):

Teruaki Katsube ◽

Koichi Kakimoto ◽

Toshiaki Ikoma

Keyword(s):

Metal Oxide ◽

Cross Sections ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Surface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Capture Cross ◽

Transient Spectroscopy ◽

Capture Cross Sections

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Determination of the temperature dependence of the capture cross-sections of the gold acceptor level and of the temperature of current filaments in silicon pin diodes

phys stat sol (a) ◽

10.1002/pssa.2210490119 ◽

1978 ◽

Vol 49 (1) ◽

pp. 153-161 ◽

Cited By ~ 5

Author(s):

I. Dudeck ◽

R. Kassing

Keyword(s):

Temperature Dependence ◽

Cross Sections ◽

Acceptor Level ◽

Capture Cross ◽

Pin Diodes ◽

Current Filaments ◽

Capture Cross Sections

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An investigation of surface state capture cross-sections for metal–oxide–semiconductor field-effect transistors using HfO2 gate dielectrics

Microelectronics Reliability ◽

10.1016/j.microrel.2007.01.009 ◽

2007 ◽

Vol 47 (4-5) ◽

pp. 548-551 ◽

Cited By ~ 5

Author(s):

Fu-Chien Chiu ◽

Wen-Chieh Shih ◽

Joseph Ya-min Lee ◽

Huey-Liang Hwang

Keyword(s):

Cross Sections ◽

Surface State ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Capture Cross ◽

State Capture ◽

Capture Cross Sections

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Use of transient capacitance measurements for direct determination of minority‐carrier lifetime in low‐doped metal‐oxide‐semiconductor structures

Applied Physics Letters ◽

10.1063/1.95008 ◽

1984 ◽

Vol 45 (1) ◽

pp. 52-53 ◽

Cited By ~ 2

Author(s):

U. Efron ◽

P. O. Braatz

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Direct Determination ◽

Minority Carrier Lifetime ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Capacitance Measurements ◽

Semiconductor Structures ◽

Transient Capacitance

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Determination of capture cross sections for as-grown electron traps in HfO2∕HfSiO stacks

Journal of Applied Physics ◽

10.1063/1.2364043 ◽

2006 ◽

Vol 100 (9) ◽

pp. 093716 ◽

Cited By ~ 36

Author(s):

C. Z. Zhao ◽

J. F. Zhang ◽

M. B. Zahid ◽

B. Govoreanu ◽

G. Groeseneken ◽

...

Keyword(s):

Cross Sections ◽

Capture Cross ◽

Electron Traps ◽

Capture Cross Sections

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Analytical Determination of Generation-Recombination Rate In Amorphous Silicon

MRS Proceedings ◽

10.1557/proc-70-149 ◽

1986 ◽

Vol 70 ◽

Cited By ~ 1

Author(s):

Jože Furlan ◽

Slavko Amon

Keyword(s):

Analytical Solution ◽

Amorphous Silicon ◽

Cross Sections ◽

Recombination Rate ◽

Exponential Model ◽

Localized States ◽

Analytical Determination ◽

Capture Cross ◽

Capture Cross Sections

ABSTRACTA general expression for generation-recombination rate in a-Si based on classical SRH theory including different electron and hole capture cross-sections for donor-like and acceptor-like centers inside the mobility gap is derived. Applying appropriate approximations and two-exponential model for localized states distribution two methods of analytical solution are presented and discussed.

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The (??SF) Method - Determination of Radiative Neutron Capture Cross Sections for Unstable Nuclei

Journal of the Korean Physical Society ◽

10.3938/jkps.59.1713 ◽

2011 ◽

Vol 59 (2(3)) ◽

pp. 1713-1716 ◽

Cited By ~ 2

Author(s):

H. Utsunomiya ◽

S. Goriely ◽

H. Akimune ◽

H. Harada ◽

F. Kitatani ◽

...

Keyword(s):

Cross Sections ◽

Neutron Capture ◽

Capture Cross ◽

Unstable Nuclei ◽

Radiative Neutron ◽

Radiative Neutron Capture ◽

Capture Cross Sections

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Determination of interface trap capture cross sections using three-level charge pumping

IEEE Electron Device Letters ◽

10.1109/55.57927 ◽

1990 ◽

Vol 11 (8) ◽

pp. 339-341 ◽

Cited By ~ 90

Author(s):

N.S. Saks ◽

M.G. Ancona

Keyword(s):

Cross Sections ◽

Interface Trap ◽

Capture Cross ◽

Charge Pumping ◽

Capture Cross Sections

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Simulations of quantized inversion layer electron transport in 6H–Silicon carbide metal oxide semiconductor structures

Applied Physics Letters ◽

10.1063/1.121307 ◽

1998 ◽

Vol 72 (17) ◽

pp. 2156-2158 ◽

Cited By ~ 7

Author(s):

R. P. Joshi

Keyword(s):

Silicon Carbide ◽

Electron Transport ◽

Metal Oxide ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Surface recombination in bipolar transistors; accurate determination of carriers capture cross-sections of Si/SiO/sub 2/ states by means of process/device simulations

Proceedings of the 1991 Bipolar Circuits and Technology Meeting ◽

10.1109/bipol.1991.160983 ◽

2002 ◽

Author(s):

E. Dubois

Keyword(s):

Cross Sections ◽

Accurate Determination ◽

Surface Recombination ◽

Bipolar Transistors ◽

Capture Cross ◽

Capture Cross Sections

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