An investigation of surface state capture cross-sections for metal–oxide–semiconductor field-effect transistors using HfO2 gate dielectrics

Fu-Chien Chiu; Wen-Chieh Shih; Joseph Ya-min Lee; Huey-Liang Hwang

doi:10.1016/j.microrel.2007.01.009

An investigation of surface state capture cross-sections for metal–oxide–semiconductor field-effect transistors using HfO2 gate dielectrics

Microelectronics Reliability ◽

10.1016/j.microrel.2007.01.009 ◽

2007 ◽

Vol 47 (4-5) ◽

pp. 548-551 ◽

Cited By ~ 5

Author(s):

Fu-Chien Chiu ◽

Wen-Chieh Shih ◽

Joseph Ya-min Lee ◽

Huey-Liang Hwang

Keyword(s):

Cross Sections ◽

Surface State ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Capture Cross ◽

State Capture ◽

Capture Cross Sections

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Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.3457388 ◽

2010 ◽

Vol 96 (25) ◽

pp. 253502 ◽

Cited By ~ 19

Author(s):

Yen-Ting Chen ◽

Han Zhao ◽

Yanzhen Wang ◽

Fei Xue ◽

Fei Zhou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of Electronic Materials ◽

10.1007/s11664-004-0220-9 ◽

2004 ◽

Vol 33 (8) ◽

pp. 912-915 ◽

Cited By ~ 12

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H. -J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

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Self-aligned inversion-channel In0.75Ga0.25As metal–oxide–semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics

Solid-State Electronics ◽

10.1016/j.sse.2010.04.033 ◽

2010 ◽

Vol 54 (9) ◽

pp. 919-924 ◽

Cited By ~ 31

Author(s):

T.D. Lin ◽

H.C. Chiu ◽

P. Chang ◽

Y.H. Chang ◽

Y.D. Wu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Vox/Eox-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.7 ◽

2007 ◽

Vol 46 (1) ◽

pp. 7-13 ◽

Cited By ~ 2

Author(s):

Shimpei Tsujikawa ◽

Katsuya Shiga ◽

Hiroshi Umeda ◽

Jiro Yugami

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Low Voltage ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

P Type

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Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2138372 ◽

2005 ◽

Vol 98 (11) ◽

pp. 114504 ◽

Cited By ~ 13

Author(s):

Shiyang Zhu ◽

Anri Nakajima ◽

Takuo Ohashi ◽

Hideharu Miyake

Keyword(s):

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap ◽

Negative Bias Temperature Instability ◽

Charge Generation ◽

Oxide Charge ◽

Bias Temperature Instability

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Transconductance degradation and interface state generation in metal‐oxide‐semiconductor field‐effect transistors with oxynitride gate dielectrics under hot‐carrier stress

Applied Physics Letters ◽

10.1063/1.102819 ◽

1990 ◽

Vol 56 (3) ◽

pp. 250-252 ◽

Cited By ~ 8

Author(s):

G. Q. Lo ◽

W. C. Ting ◽

D. K. Shih ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress ◽

State Generation

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Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics

Applied Physics Letters ◽

10.1063/1.4813829 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033502 ◽

Cited By ~ 21

Author(s):

Yuya Minoura ◽

Atsushi Kasuya ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Interfaces ◽

And Control

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Temperature and energy dependences of capture cross sections at surface states in Si metal‐oxide‐semiconductor diodes measured by deep level transient spectroscopy

Journal of Applied Physics ◽

10.1063/1.329128 ◽

1981 ◽

Vol 52 (5) ◽

pp. 3504-3508 ◽

Cited By ~ 69

Author(s):

Teruaki Katsube ◽

Koichi Kakimoto ◽

Toshiaki Ikoma

Keyword(s):

Metal Oxide ◽

Cross Sections ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Surface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Capture Cross ◽

Transient Spectroscopy ◽

Capture Cross Sections

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Surface state capture cross sections at Si/electrolyte interfaces determined by combined microwave reflection/photocurrent measurements

Physical Chemistry Chemical Physics ◽

10.1039/b304547c ◽

2003 ◽

Vol 5 (18) ◽

pp. 3984-3987 ◽

Cited By ~ 1

Author(s):

Frank Wünsch ◽

Nicolas Alonso-Vante ◽

Helmut Tributsch

Keyword(s):

Cross Sections ◽

Surface State ◽

Capture Cross ◽

State Capture ◽

Microwave Reflection ◽

Capture Cross Sections

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The role of Si orientation and temperature on the carrier mobility in metal oxide semiconductor field-effect transistors with ultrathin HfO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2210627 ◽

2006 ◽

Vol 100 (1) ◽

pp. 014504 ◽

Cited By ~ 38

Author(s):

B. Mereu ◽

C. Rossel ◽

E. P. Gusev ◽

M. Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Carrier Mobility ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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