Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height

2011 ◽  
Vol 98 (9) ◽  
pp. 092113 ◽  
Author(s):  
J.-Y. Jason Lin ◽  
Arunanshu M. Roy ◽  
Aneesh Nainani ◽  
Yun Sun ◽  
Krishna C. Saraswat
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Current Density ◽  
Interfacial Layer ◽  
Schottky Barrier Height ◽  
Metal Contacts

Metal contacts to GaAs with 1 eV Schottky barrier height

1988 ◽  
Vol 52 (21) ◽  
pp. 1794-1796 ◽  
Author(s):  
J. R. Waldrop ◽  
R. W. Grant
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Metal Contacts

scholarly journals Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Sachin Gupta ◽  
F. Rortais ◽  
R. Ohshima ◽  
Y. Ando ◽  
T. Endo ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Schottky Barrier Height ◽  
Metal Contacts ◽  
Back Gate ◽  
Vapor Deposition Technique ◽  
Effect Transistor

AbstractTwo-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 channels were directly grown on SiO2/Si substrate via chemical vapor deposition technique. The increase in current with back gate voltage (Vg) shows the tunability of FET characteristics. The Schottky barrier height (SBH) estimated for Py/MoS2 contacts is found to be +28.8 meV (at Vg = 0V), which is the smallest value reported so-far for any direct metal (magnetic or non-magnetic)/monolayer MoS2 contact. With the application of positive gate voltage, SBH shows a reduction, which reveals ohmic behavior of Py/MoS2 contacts. Low SBH with controlled ohmic nature of FM contacts is a primary requirement for MoS2 based spintronics and therefore using directly grown MoS2 channels in the present study can pave a path towards high performance devices for large scale applications.

Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 923-926 ◽  
Author(s):  
Masataka Satoh ◽  
H. Matsuo
Keyword(s):  
Work Function ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Crystal Orientation ◽  
Schottky Barrier Height ◽  
Donor Concentration ◽  
Metal Contacts ◽  
Acceptor Concentration ◽  
Small Change ◽  
P Type

The Schottky barrier height (SBH) of Al, Ti, Au, and Ni contacts to n- and p-type 3C-SiC is investigated by means of I-V and C-V measurements. All metal contacts to n- (net donor concentration: 1.0 x 1016 /cm3) and p-type (net acceptor concentration: 4 x 1016 /cm3) 3C-SiC show the rectifying I-V characteristics except for Al contact to n-type 3C-SiC. Only Al contact to n-type 3C-SiC shows the ohmic characteristics. As the work function of metal is increased from 4.3 (Ti) to 5.2 (Ni) eV, SBH for n-type 3C-SiC is increased from 0.4 to 0.7 eV and SBH for p-type 3C-SiC is decreased from 2.2 to 1.8 eV. The small change of SBH for 3C-SiC may be correlated to the crystal orientation and the defects on the surface of 3C-SiC.

Effect of Si and Ge Interface Layers on the Schottky Barrier Height of Metal Contacts to GaAs

1989 ◽  
Vol 148 ◽  
Author(s):  
J.R. Waldrop ◽  
R.W. Grant
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Photoemission Spectroscopy ◽  
Metal Contacts ◽  
New Approach ◽  
X Ray ◽  
Electrical Methods ◽  
Interface Layers ◽  
P Type

ABSTRACTA new approach for extending the range of the Schottky barrier height ϕB of metal contacts to (100) GaAs is described. Very thin (∼ 10-30Å) heavily n-type and p-type Si or Ge interlayers are found to directly alter the GaAi interface Fermi energy EF. X-ray photoemission spectroscopy is used to determine EF during contact formation and the corresponding ϕB for thick contacts is measured by electrical methods. In an appropriate structure the ϕB range for contacts to n-type GaAs is ∼ 0.25 to 1.0 eV. For p-type GaAs ϕB has been increased to as much as 0.9 eV. This method of ϕBcontrol can be used for both Schottky barrier contact and nonalloyed ohmic contact applications. The results are interpreted in terms of a simple heterojunction model.

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