Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance

2011 ◽  
Vol 98 (17) ◽  
pp. 172106 ◽  
Author(s):  
Ze Yuan ◽  
Aneesh Nainani ◽  
Yun Sun ◽  
J.-Y. Jason Lin ◽  
Piero Pianetta ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Interfacial Layer ◽  
Schottky Barrier Height ◽  
Height Reduction ◽  
Tunneling Resistance

Insertion of an ultrathin Al2O3 interfacial layer for Schottky barrier height reduction in WS2 field-effect transistors

Nanoscale ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 4811-4821 ◽  
Author(s):  
Shan Zheng ◽  
Haichang Lu ◽  
Huan Liu ◽  
Dameng Liu ◽  
John Robertson
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Interfacial Layer ◽  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
Height Reduction

We report an effective approach for reducing the Schottky barrier height (SBH) in the source and drain (S/D) contacts of WS2 field-effect transistors (FETs) using an ultrathin Al2O3 interfacial layer between the metal and WS2.

Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1428-1430 ◽  
Author(s):  
Masaaki Onomura ◽  
Shinji Saito ◽  
John Rennie ◽  
Yukie Nishikawa ◽  
Peter J. Parbrook ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Height Reduction

Schottky Barrier Height Reduction for p-ZnSe Contacts by Sulfur Treatment

1995 ◽  
Author(s):  
M. Onomura ◽  
S. Saito ◽  
J. Rennie ◽  
Y. Nishikawa ◽  
P. J. Parbrook ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Height Reduction
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