Electrical characterization of GaAs/Al0.30Ga0.70Asp+‐nheterojunctions grown by metalorganic vapor phase epitaxy

1989 ◽  
Vol 65 (12) ◽  
pp. 4928-4935 ◽  
Author(s):  
M. A. Tischler ◽  
H. Baratte ◽  
T. F. Kuech ◽  
P. J. Wang
2003 ◽  
Vol 799 ◽  
Author(s):  
T. Ishiguro ◽  
Y. Kobori ◽  
Y. Nagawa ◽  
Y. Iwamura ◽  
S. Yamaguchi

ABSTRACTInSb1-xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen was incorporated into InSb1-xNx up to 0.24.


1996 ◽  
Vol 68 (17) ◽  
pp. 2392-2394 ◽  
Author(s):  
J. W. Huang ◽  
T. F. Kuech ◽  
Hongqiang Lu ◽  
Ishwara Bhat

2000 ◽  
Vol 76 (7) ◽  
pp. 897-899 ◽  
Author(s):  
H. M. Chung ◽  
W. C. Chuang ◽  
Y. C. Pan ◽  
C. C. Tsai ◽  
M. C. Lee ◽  
...  

2015 ◽  
Vol 31 ◽  
pp. 100-105 ◽  
Author(s):  
C. Bilel ◽  
H. Fitouri ◽  
I. Zaied ◽  
A. Bchetnia ◽  
A. Rebey ◽  
...  

1998 ◽  
Vol 27 (2) ◽  
pp. 81-84 ◽  
Author(s):  
B. K. Han ◽  
L. Li ◽  
M. J. Kappers ◽  
R. F. Hicks ◽  
H. Yoon ◽  
...  

1996 ◽  
Vol 68 (16) ◽  
pp. 2270-2272 ◽  
Author(s):  
T. J. Mountziaris ◽  
J. Peck ◽  
S. Stoltz ◽  
W. Y. Yu ◽  
A. Petrou ◽  
...  

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