Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess

Kuan-Wei Lee; Hsien-Cheng Lin; Fang-Ming Lee; Hou-Kuei Huang; Yeong-Her Wang

doi:10.1063/1.3430569

Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess

Applied Physics Letters ◽

10.1063/1.3430569 ◽

2010 ◽

Vol 96 (20) ◽

pp. 203506 ◽

Cited By ~ 2

Author(s):

Kuan-Wei Lee ◽

Hsien-Cheng Lin ◽

Fang-Ming Lee ◽

Hou-Kuei Huang ◽

Yeong-Her Wang

Keyword(s):

Liquid Phase ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Noise Performance ◽

High Electron Mobility ◽

Gate Recess

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Enhancement-Mode Algaas/Ingaas Pseudomorphic High-Electron-Mobility Transistor With a Liquid Phase Oxidized GaAs As Gate Oxide

ECS Meeting Abstracts ◽

10.1149/ma2013-02/23/1847 ◽

2013 ◽

Keyword(s):

Liquid Phase ◽

Electron Mobility ◽

Gate Oxide ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode

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AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2171690 ◽

2012 ◽

Vol 59 (1) ◽

pp. 121-127 ◽

Cited By ~ 16

Author(s):

Chih-Chun Hu ◽

Mon-Sen Lin ◽

Tsu-Yi Wu ◽

Feri Adriyanto ◽

Po-Wen Sze ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric

IEEE Electron Device Letters ◽

10.1109/led.2005.859629 ◽

2005 ◽

Vol 26 (12) ◽

pp. 864-866 ◽

Cited By ~ 15

Author(s):

Kuan-Wei Lee ◽

Po-Wen Sze ◽

Yu-Ju Lin ◽

Nan-Ying Yang ◽

Mau-Phon Houng ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Liquid-phase sensors using open-gate AlGaN∕GaN high electron mobility transistor structure

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2214701 ◽

2006 ◽

Vol 24 (4) ◽

pp. 1972 ◽

Cited By ~ 41

Author(s):

Takuya Kokawa ◽

Taketomo Sato ◽

Hideki Hasegawa ◽

Tamotsu Hashizume

Keyword(s):

Liquid Phase ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility

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InA1As/InGaAs Metamorphic High Electron Mobility Transistor with a Liquid Phase Oxidized InA1As as Gate Dielectric

2005 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2005.1635348 ◽

2006 ◽

Author(s):

Kuan-Wei Lee Kai-Lin Lee

Keyword(s):

Liquid Phase ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Highly Selective GaAs/Al0.2Ga0.8As Wet Etch Process for the Gate Recess of Low-Voltage-Power Pseudomorphic High-Electron-Mobility Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.4699 ◽

2000 ◽

Vol 39 (Part 1, No. 8) ◽

pp. 4699-4703 ◽

Cited By ~ 2

Author(s):

Huang-Choung Chang ◽

Edward Y. Chang ◽

Chao-Cheng Chung ◽

C. T. Kuo

Keyword(s):

Electron Mobility ◽

Low Voltage ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Gate Recess ◽

Wet Etch

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Selective Liquid Phase Oxidation of AlGaAs and Application to AlGaAs∕InGaAs Pseudomorphic High Electron Mobility Transistor

Journal of The Electrochemical Society ◽

10.1149/1.3185855 ◽

2009 ◽

Vol 156 (10) ◽

pp. H763

Author(s):

Kuan-Wei Lee ◽

Hsien-Chang Lin ◽

Fang-Ming Lee ◽

Yeong-Her Wang

Keyword(s):

Liquid Phase ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Liquid Phase Oxidation ◽

High Electron ◽

High Electron Mobility ◽

Phase Oxidation

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Effect of material composition on noise performance of sub-micron high electron mobility transistor

Microsystem Technologies ◽

10.1007/s00542-019-04742-3 ◽

2020 ◽

Author(s):

Arpan Deyasi ◽

Angsuman Sarkar

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

Material Composition ◽

High Electron ◽

Noise Performance ◽

High Electron Mobility

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Improved breakdown voltage and impact ionization in InAlAs∕InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

Applied Physics Letters ◽

10.1063/1.2151252 ◽

2005 ◽

Vol 87 (26) ◽

pp. 263501 ◽

Cited By ~ 18

Author(s):

Kuan-Wei Lee ◽

Nan-Ying Yang ◽

Mau-Phon Houng ◽

Yeong-Her Wang ◽

Po-Wen Sze

Keyword(s):

Liquid Phase ◽

Breakdown Voltage ◽

Electron Mobility ◽

Impact Ionization ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Planarized Trench Isolation of In0.52Al0.48As/In0.8Ga0.2As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2021.3054399 ◽

2021 ◽

pp. 1-1

Author(s):

Houng-Wei Chen ◽

Tsung-Ying Lee ◽

Jung-Sheng Huang ◽

Kuan-Wei Lee ◽

Yeong-Her Wang

Keyword(s):

Liquid Phase ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Trench Isolation ◽

Enhanced Oxidation ◽

Phase Chemical

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