Improved breakdown voltage and impact ionization in InAlAs∕InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

Kuan-Wei Lee; Nan-Ying Yang; Mau-Phon Houng; Yeong-Her Wang; Po-Wen Sze

doi:10.1063/1.2151252

Improved breakdown voltage and impact ionization in InAlAs∕InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate

Applied Physics Letters ◽

10.1063/1.2151252 ◽

2005 ◽

Vol 87 (26) ◽

pp. 263501 ◽

Cited By ~ 18

Author(s):

Kuan-Wei Lee ◽

Nan-Ying Yang ◽

Mau-Phon Houng ◽

Yeong-Her Wang ◽

Po-Wen Sze

Keyword(s):

Liquid Phase ◽

Breakdown Voltage ◽

Electron Mobility ◽

Impact Ionization ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

Download Full-text

High Breakdown Voltage AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with TiO2/SiN Gate Insulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2309 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2309-2311 ◽

Cited By ~ 22

Author(s):

Shuichi Yagi ◽

Mitsuaki Shimizu ◽

Hajime Okumura ◽

Hiromichi Ohashi ◽

Yoshiki Yano ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Gate Insulator ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

High Breakdown Voltage

Download Full-text

Enhancement-Mode Algaas/Ingaas Pseudomorphic High-Electron-Mobility Transistor With a Liquid Phase Oxidized GaAs As Gate Oxide

ECS Meeting Abstracts ◽

10.1149/ma2013-02/23/1847 ◽

2013 ◽

Keyword(s):

Liquid Phase ◽

Electron Mobility ◽

Gate Oxide ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode

Download Full-text

AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2171690 ◽

2012 ◽

Vol 59 (1) ◽

pp. 121-127 ◽

Cited By ~ 16

Author(s):

Chih-Chun Hu ◽

Mon-Sen Lin ◽

Tsu-Yi Wu ◽

Feri Adriyanto ◽

Po-Wen Sze ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

Download Full-text

Enhancement of AlGaN/GaN High Electron Mobility Transistor Off-State Drain Breakdown Voltage via Backside Proton Irradiation

ECS Meeting Abstracts ◽

10.1149/ma2014-01/41/1518 ◽

2014 ◽

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

Download Full-text

Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess

Applied Physics Letters ◽

10.1063/1.3430569 ◽

2010 ◽

Vol 96 (20) ◽

pp. 203506 ◽

Cited By ~ 2

Author(s):

Kuan-Wei Lee ◽

Hsien-Cheng Lin ◽

Fang-Ming Lee ◽

Hou-Kuei Huang ◽

Yeong-Her Wang

Keyword(s):

Liquid Phase ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Noise Performance ◽

High Electron Mobility ◽

Gate Recess

Download Full-text

Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2239 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2239-2242 ◽

Cited By ~ 24

Author(s):

Wataru Saito ◽

Yoshiharu Takada ◽

Masahiko Kuraguchi ◽

Kunio Tsuda ◽

Ichiro Omura ◽

...

Keyword(s):

Power Electronics ◽

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Plate Structure ◽

Field Plate ◽

High Breakdown Voltage

Download Full-text

InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid-phase-oxidized InGaP as gate dielectric

IEEE Electron Device Letters ◽

10.1109/led.2005.859629 ◽

2005 ◽

Vol 26 (12) ◽

pp. 864-866 ◽

Cited By ~ 15

Author(s):

Kuan-Wei Lee ◽

Po-Wen Sze ◽

Yu-Ju Lin ◽

Nan-Ying Yang ◽

Mau-Phon Houng ◽

...

Keyword(s):

Liquid Phase ◽

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

Download Full-text

Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation

10.1117/12.2076676 ◽

2015 ◽

Author(s):

F. Ren ◽

Y.-H. Hwang ◽

S. J. Pearton ◽

Erin Patrick ◽

Mark E. Law

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

Download Full-text

Liquid-phase sensors using open-gate AlGaN∕GaN high electron mobility transistor structure

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2214701 ◽

2006 ◽

Vol 24 (4) ◽

pp. 1972 ◽

Cited By ~ 41

Author(s):

Takuya Kokawa ◽

Taketomo Sato ◽

Hideki Hasegawa ◽

Tamotsu Hashizume

Keyword(s):

Liquid Phase ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Transistor Structure ◽

High Electron Mobility

Download Full-text

InA1As/InGaAs Metamorphic High Electron Mobility Transistor with a Liquid Phase Oxidized InA1As as Gate Dielectric

2005 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2005.1635348 ◽

2006 ◽

Author(s):

Kuan-Wei Lee Kai-Lin Lee

Keyword(s):

Liquid Phase ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

Download Full-text