Temperature dependence of intra‐4f‐shell photo‐ and electroluminescence spectra for erbium‐doped GaAs

1989 ◽  
Vol 65 (3) ◽  
pp. 1257-1260 ◽  
Author(s):  
Kenichiro Takahei ◽  
Peter S. Whitney ◽  
Hiroshi Nakagome ◽  
Kunihiko Uwai
Keyword(s):  
Temperature Dependence ◽  
Erbium Doped

Temperature dependence of light polarization in active erbium-doped fiber

2005 ◽  
Vol 45 (3) ◽  
pp. 246-249 ◽  
Author(s):  
M. A. Quintela ◽  
F. J. Madruga ◽  
M. López-Amo ◽  
J. M. López-Higuera
Keyword(s):  
Temperature Dependence ◽  
Light Polarization ◽  
Erbium Doped

scholarly journals Er3+ Photoluminescence Properties of Erbium-doped Si/SiO2 Superlattices with sub-nm Thin Si Layers

2000 ◽  
Vol 638 ◽  
Author(s):  
Yong Ho Ha ◽  
Sehun Kim ◽  
Dae Won Moon ◽  
Ji-Hong Jhe ◽  
Jung H. Shin
Keyword(s):  
Temperature Dependence ◽  
Layer Thickness ◽  
Luminescence Intensity ◽  
Luminescence Properties ◽  
Photoluminescence Properties ◽  
Time Resolved ◽  
Excitation Rate ◽  
Erbium Doped ◽  
Order Of Magnitude ◽  
Er Doped

AbstractThe effect of varying the Si layer thickness on the Er3+ photoluminescence properties of Er-doped Si/SiO2 superlattice is investigated. We find that as the Si layer thickness is reduced from 3.6 nm down to a monolayer of Si, the Er3+ luminescence intensity increases by over an order of magnitude. Temperature dependence of the Er3+ luminescence intensity and time-resolved measurement of Er3+ luminescence intensity identify the increase in the excitation rate as the likely cause for such an increase, and underscore the importance of the Si/SiO2 interface in determining the Er3+ luminescence properties.

Temperature dependence of fluorescence in erbium-doped silica fiber

2008 ◽  
Author(s):  
Jian Peng ◽  
Yongjun Fu ◽  
LiSong Liu ◽  
Fengping Yan ◽  
Huai Wei ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Silica Fiber ◽  
Erbium Doped

Homogeneous broadening effect on temperature dependence of green upconversion luminescence in erbium doped fibers

2013 ◽  
Vol 139 ◽  
pp. 52-59 ◽  
Author(s):  
A. Egatz-Gómez ◽  
Oscar G. Calderón ◽  
Sonia Melle ◽  
F. Carreño ◽  
M.A. Antón ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Upconversion Luminescence ◽  
Erbium Doped ◽  
Homogeneous Broadening ◽  
Doped Fibers

Temperature Dependence of Negative Nonlinear Absorption Effect in an Erbium-doped Borate Glass

1998 ◽  
Vol 37 (Part 1, No. 9A) ◽  
pp. 4842-4843 ◽  
Author(s):  
Yoshinobu Maeda ◽  
Akio Konishi ◽  
Hidekazu Hashima ◽  
Hajimu Wakabayashi ◽  
Toshikazu Yamada
Keyword(s):  
Temperature Dependence ◽  
Nonlinear Absorption ◽  
Borate Glass ◽  
Absorption Effect ◽  
Erbium Doped

Photoluminescence of Erbium-Doped Silicon: Temperature Dependence

1999 ◽  
Vol 69-70 ◽  
pp. 359-364 ◽  
Author(s):  
C.A.J. Ammerlaan ◽  
D.T.X. Thao ◽  
T. Gregorkiewicz ◽  
Boris A. Andreev ◽  
Z.F. Krasil'nik
Keyword(s):  
Temperature Dependence ◽  
Erbium Doped ◽  
Doped Silicon

Erbium Doped Si/Sige Waveguide Diodes: Optical And Electrical Characterization

1998 ◽  
Vol 533 ◽  
Author(s):  
E. Neufeld ◽  
A. Luigart ◽  
A. Sticht ◽  
K. Brunner ◽  
G. Abstreiter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Confocal Microscope ◽  
Additional Annealing ◽  
Erbium Doped ◽  
Luminescence Characteristics ◽  
Narrow Emission

AbstractWe have fabricated erbium- and oxygen-doped Si/SiGe waveguide diodes showing the characteristic 1.54 µm electroluminescence (EL) from incorporated Er+3, ions. All samples were grown by molecular beam epitaxy (MBE). The EL from the polished end facet of the waveguide was measured with a confocal microscope revealing a spatially narrow emission. Additional annealing was not necessary to improve the luminescence characteristics. Only a weak temperature dependence is found for the EL intensity between 4K and room temperature.

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