Temperature dependence of light polarization in active erbium-doped fiber

2005 ◽  
Vol 45 (3) ◽  
pp. 246-249 ◽  
Author(s):  
M. A. Quintela ◽  
F. J. Madruga ◽  
M. López-Amo ◽  
J. M. López-Higuera
2004 ◽  
Vol 42 (5) ◽  
pp. 395-397 ◽  
Author(s):  
M. A. Quintela ◽  
C. Jauregui ◽  
F. J. Madruga ◽  
J. M. López-Higuera

1989 ◽  
Vol 65 (3) ◽  
pp. 1257-1260 ◽  
Author(s):  
Kenichiro Takahei ◽  
Peter S. Whitney ◽  
Hiroshi Nakagome ◽  
Kunihiko Uwai

2000 ◽  
Vol 638 ◽  
Author(s):  
Yong Ho Ha ◽  
Sehun Kim ◽  
Dae Won Moon ◽  
Ji-Hong Jhe ◽  
Jung H. Shin

AbstractThe effect of varying the Si layer thickness on the Er3+ photoluminescence properties of Er-doped Si/SiO2 superlattice is investigated. We find that as the Si layer thickness is reduced from 3.6 nm down to a monolayer of Si, the Er3+ luminescence intensity increases by over an order of magnitude. Temperature dependence of the Er3+ luminescence intensity and time-resolved measurement of Er3+ luminescence intensity identify the increase in the excitation rate as the likely cause for such an increase, and underscore the importance of the Si/SiO2 interface in determining the Er3+ luminescence properties.


2008 ◽  
Author(s):  
Jian Peng ◽  
Yongjun Fu ◽  
LiSong Liu ◽  
Fengping Yan ◽  
Huai Wei ◽  
...  

2013 ◽  
Vol 139 ◽  
pp. 52-59 ◽  
Author(s):  
A. Egatz-Gómez ◽  
Oscar G. Calderón ◽  
Sonia Melle ◽  
F. Carreño ◽  
M.A. Antón ◽  
...  

1998 ◽  
Vol 37 (Part 1, No. 9A) ◽  
pp. 4842-4843 ◽  
Author(s):  
Yoshinobu Maeda ◽  
Akio Konishi ◽  
Hidekazu Hashima ◽  
Hajimu Wakabayashi ◽  
Toshikazu Yamada

1999 ◽  
Vol 69-70 ◽  
pp. 359-364 ◽  
Author(s):  
C.A.J. Ammerlaan ◽  
D.T.X. Thao ◽  
T. Gregorkiewicz ◽  
Boris A. Andreev ◽  
Z.F. Krasil'nik

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