Stability and Metastability in Semiconductor Strained-Layer Structures

1987 ◽  
Vol 103 ◽  
Author(s):  
Brian W. Dodson ◽  
I. J. Fritz ◽  
S. Thomas Picraux ◽  
Jeffrey Y. Tsao
Keyword(s):  
Experimental Data ◽  
Plastic Deformation ◽  
Structural Relaxation ◽  
Strain Relaxation ◽  
Dislocation Dynamics ◽  
Strained Layer ◽  
Stability Properties ◽  
Mismatch Strain ◽  
Layer Structures ◽  
Standard Models

ABSTRACTThe physics governing stability properties and relaxation of mismatch strain in semiconductor strained-layer structures is reviewed. Experimental data on stability and rates of strain relaxation are examined. We conclude that essentially all observations on structural relaxation of semiconductor strained-layer structures can be explained by standard models of plastic deformation adapted to the special conditions controlling dislocation dynamics in these structures.

Metastability in SiGe/Si Strained-Layer Structures

1988 ◽  
Vol 116 ◽  
Author(s):  
Brian W. Dodson
Keyword(s):  
Experimental Data ◽  
Plastic Deformation ◽  
Crystal Growth ◽  
Strain Relaxation ◽  
Dislocation Dynamics ◽  
Strained Layer ◽  
Layer Structures ◽  
Standard Models ◽  
Stability Limits

AbstractThe physics governing growth and stability properties in SiGe/Si strainedlayer structures is reviewed. The role of metastability in crystal growth is outlined. Experimental data on stability limits and rates of strain relaxation are examined. We conclude that essentially all observations on relaxation of semiconductor strained-layer structures can be explained by standard models of plastic deformation adapted to the special conditions controlling dislocation dynamics in these structures.

Mechanics of Elastic Dislocations in Strained Layer Structures

1988 ◽  
Vol 130 ◽  
Author(s):  
L. B. Freund ◽  
A. Bower ◽  
J. C. Ramirez
Keyword(s):  
Critical Thickness ◽  
Strain Relaxation ◽  
Continuum Theory ◽  
Growth Surface ◽  
Threading Dislocation ◽  
Strained Layer ◽  
Periodic Arrays ◽  
Layer Structures ◽  
Surface Irregularities ◽  
Generalized Driving Force

AbstractApplication of the elastic continuum theory of dislocations to modeling of phenomena associated with elastic strain relaxation in strained layer epitaxial heterostructures is discussed. The concept of critical thickness for onset of strain relaxation in a strained epitaxial layer is first reviewed, and some extensions to periodic arrays of dislocations and to multiple layers are described. Then, two issues are addressed that arise when the assumptions underlying the critical thickness concept are not met. One issue concerns the nucleation of dislocations at the growth surface of an epitaxial film, particularly the influence of surface irregularities on the activation energy for surface nucleation. A second issue concerns the kinetics of glide of a threading dislocation as it lays down an interface misfit dislocation when the layer thickness exceeds the critical thickness. A generalized driving force for the glide process is defined, and a relationship between this force and the glide speed is proposed.

Planar channeling in GaAs/InxGa1−xAs/GaAs strained‐layer structures

1989 ◽  
Vol 65 (4) ◽  
pp. 1510-1515 ◽  
Author(s):  
J. L. E. Stevens ◽  
B. J. Robinson ◽  
J. A. Davies ◽  
D. A. Thompson ◽  
T. E. Jackman
Keyword(s):  
Planar Channeling ◽  
Strained Layer ◽  
Layer Structures

Disorientations in dislocation structures: Formation and spatial correlation

2002 ◽  
Vol 17 (9) ◽  
pp. 2433-2441 ◽  
Author(s):  
Wolfgang Pantleon
Keyword(s):  
Plastic Deformation ◽  
Spatial Correlation ◽  
Distribution Functions ◽  
Scaling Behavior ◽  
Dislocation Dynamics ◽  
Slip Systems ◽  
Experimental Findings ◽  
Good Agreement

During plastic deformation, dislocation boundaries are formed and orientation differences across them arise. Two different causes lead to the formation of two kinds of deformation-induced boundaries: a statistical trapping of dislocations in incidental dislocation boundaries and a difference in the activation of slip systems on both sides of geometrically necessary boundaries. On the basis of these mechanisms, the occurrence of disorientations across both types of dislocation boundaries is modeled by dislocation dynamics. The resulting evolution of the disorientation angles with strain is in good agreement with experimental observations. The theoretically obtained distribution functions for the disorientation angles describe the experimental findings well and explain their scaling behavior. The model also predicts correlations between disorientations in neighboring boundaries, and evidence for their existence is presented.

Solid phase epitaxial regrowth of Si1−xGex/Si strained‐layer structures amorphized by ion implantation

1989 ◽  
Vol 54 (1) ◽  
pp. 42-44 ◽  
Author(s):  
B. T. Chilton ◽  
B. J. Robinson ◽  
D. A. Thompson ◽  
T. E. Jackman ◽  
J.‐M. Baribeau
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Strained Layer ◽  
Epitaxial Regrowth ◽  
Layer Structures

COMBINED HRLEED AND STM INVESTIGATIONS ON THE INITIAL STAGES OF Cu HETEROEPITAXY Ru(0001)

1997 ◽  
Vol 04 (06) ◽  
pp. 1167-1171 ◽  
Author(s):  
CH. AMMER ◽  
K. MEINEL ◽  
H. WOLTER ◽  
A. BECKMANN ◽  
H. NEDDERMEYER
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Strain Relaxation ◽  
Local Scale ◽  
Low Energy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Low Energy Electron Diffraction ◽  
Layer Structures ◽  
Low Energy Electron

Recent scanning tunneling microscopy (STM) observations revealed different layer structures in the heteroepitaxial Cu/Ru(0001) system with increasing film thickness attributed to various stages of strain relaxation. High-resolution low-energy electron diffraction (HRLEED) analysis permits one to derive more exactly both lattice periodicities and lattice rotations. Furthermore, the representative character of local STM results can be proved. However, STM measurements are needed to identify and to assign the satellite spots to coexistent different superstructures which are superposed incoherently in the diffraction pattern. Generally, the integral LEED results confirm the crystallographic data obtained by STM in a local scale.

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